• Korean Journal of Materials Research
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• v.33 no.12
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• pp.525-529
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• 2023

β-Ga₂O₃ has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga₂O₃ epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga₂O₃ on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga₂O₃ epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 10¹⁹ to 1 × 10¹⁶ cm^-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga₂O₃ hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga₂O₃ applications with the advantage of low substrate cost.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.92-97
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• 2011

Landfill is the main treatment method for bottom-ash because it has not only an irregular particle size and ingredients but also not proper recycling treatment. The aim of this study is to raise recycling rate of bottom-ash(nonplasticity pulverulent) and for the purpose of alternatives of clay to investigate the properties of Bottom-ash (B/A)-Hard Clay (H/C) bodies with controlled interfacial chemistry properties. After investigating the sedimentation height of suspensions with controlled pH, it was discovered that there was no hetero-polar aggregation for mixed slips because hard clay and bottom-ash had similar interfacial chemistry properties. Also, bulk density, water absorption, and microstructure properties of each pellet was observed that made by silp casting method and manufactured at $50^{\circ}C$ intervals between $1000{\sim}1250^{\circ}C$. As a result, dispersed slip of clay and bottom ash are possible for slip casting and plastic forming process because they exhibit Bingham plastic behavior. Products that made by slip with dispersed clay and bottom ash are not only suitable for KS L 4201 and KS L 1001 at $1250^{\circ}C$ but it is also possible to apply for ceramic and sanitary ware because specific gravity was about 15 % lighter than general ceramic materials.

• Journal of Powder Materials
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• v.25 no.2
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• pp.158-164
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• 2018

Multi-walled carbon nanotube (MWCNT)-copper (Cu) composites are successfully fabricated by a combination of a binder-free wet mixing and spark plasma sintering (SPS) process. The SPS is performed under various conditions to investigate optimized processing conditions for minimizing the structural defects of CNTs and densifying the MWCNT-Cu composites. The electrical conductivities of MWCNT-Cu composites are slightly increased for compositions containing up to 1 vol.% CNT and remain above the value for sintered Cu up to 2 vol.% CNT. Uniformly dispersed CNTs in the Cu matrix with clean interfaces between the treated MWCNT and Cu leading to effective electrical transfer from the treated MWCNT to the Cu is believed to be the origin of the improved electrical conductivity of the treated MWCNT-Cu composites. The results indicate the possibility of exploiting CNTs as a contributing reinforcement phase for improving the electrical conductivity and mechanical properties in the Cu matrix composites.