• 한국재료학회지
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• 제33권12호
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• pp.525-529
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• 2023

β-Ga₂O₃ has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga₂O₃ epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga₂O₃ on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga₂O₃ epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 10¹⁹ to 1 × 10¹⁶ cm^-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga₂O₃ hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga₂O₃ applications with the advantage of low substrate cost.

• 한국결정성장학회지
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• 제21권2호
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• pp.92-97
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• 2011

화력발전소에서 발생하는 석탄회의 일종인 저회는 현재 적절한 재활용 방법이 연구 되지 않아 대부분 매립에 의존하고 있는 실정이다. 본 연구에서는 비가소성 분체인 저회의 재활용율을 높이며, 저회를 점토 대체 원료로 재활용하기 위하여 저회와 점토의 계면화학적 성질을 조절하여 Bottom-ash(B/A)-Hard Clay(H/C) 소지의 물성변화를 관찰하였다. H/C 100 %, H/C60 % + B/A40 %에 대하여 각 조성별 pH에 따른 침강높이를 관찰한 결과 점토와 저회는 계면 화학적 성질이 비슷하여 혼합하여 슬립제조 시 hetero-polar 응집현상이 없었다. 또한 각 조성별 점도가 조절된 Slip을 주입 성형하여 $1100{\sim}1250^{\circ}C$에서 $50^{\circ}C$ 간격으로 소결하여 각 시편에 대한 비중, 흡수율을 측정하고 미세구조를 관찰하였다. 그 결과 분산된 점토와 저회 슬립은 Bingham 가소성 거동을 보이므로 주입성형 및 가소성형이 가능하며, 분산된 점토와 저회 슬립으로부터제조된 소결체는 $1250^{\circ}C$에서 KSL 4201과 KSL 1001의 규격을 만족할 뿐 아니라 특히 비중이 약 15 % 이상 경량이므로 도자기나 위생도기 등의 소지로 응용 가능성이 있다고 사료된다.

• 한국분말재료학회지
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• 제25권2호
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• pp.158-164
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• 2018

Multi-walled carbon nanotube (MWCNT)-copper (Cu) composites are successfully fabricated by a combination of a binder-free wet mixing and spark plasma sintering (SPS) process. The SPS is performed under various conditions to investigate optimized processing conditions for minimizing the structural defects of CNTs and densifying the MWCNT-Cu composites. The electrical conductivities of MWCNT-Cu composites are slightly increased for compositions containing up to 1 vol.% CNT and remain above the value for sintered Cu up to 2 vol.% CNT. Uniformly dispersed CNTs in the Cu matrix with clean interfaces between the treated MWCNT and Cu leading to effective electrical transfer from the treated MWCNT to the Cu is believed to be the origin of the improved electrical conductivity of the treated MWCNT-Cu composites. The results indicate the possibility of exploiting CNTs as a contributing reinforcement phase for improving the electrical conductivity and mechanical properties in the Cu matrix composites.