• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.530-535
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• 2004

We have studied 90$^{\circ}$ twisted nematic mode switching by fringe electric field(F-TN mode) using a liquid crystal (LC) with negative dielectric anisotropy. In the device, two polarizers are parallel each other, electrodes exist only on bottom substrate, and one of rubbing direction is coincident with polarizer axis. Therefore, the cell shows a black state before a voltage is applied. With a bias voltage generating fringe-electric field, the LC twists perpendicular to fringe electric field such that the LCs are almost homogeneously aligned except near the bottom surface since the negative type of the LC is used. Consequently, the new device exhibits much wider viewing angle than that of the conventional TN mode due to in-plane switching and relatively high transmittance since the LC director above whole electrode area aligns parallel to the polarizer axis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.547-551
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• 2006

We studied liquid crystal (LC) alignment with ion beam (IB) on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide surface using obliquely ion beam (IB) exposure with new IB type equipment. A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned TN-LCD on polyimide surface. Also, the EO characteristics of the ion-beam-aligned TN-LCD on a polyimide (PI) surface with ion beam exposure using new type IB equipment is same or more superior than ion-beam-aligned TN-LCD on a polyimide (PI) surface with ion beam exposure using Kaufman-type Ar ion gun.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.635-640
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• 2005

In this paper, we have improved a novel high tilted optically compensated bend (OCB) (HTOCB) mode by using high tilt angle that was generated by the unique baking condition on the homeotropic alignment layer. The high tilt angle of liquid crystal (LC) was generated by new alignment process that tilt angle changed homeotropic state to homeogenous state using Hot-plate equipment; we obtained about $40\~50^{\circ}$ tilt angle with negative and positive dielectric anisotropy on the homeotropic polyimide (PI), and then LC tilt angle decreased as increasing baking temperature and time. At last, we obtained about $10^{\circ}$ with positive type NLC $({\Delta}n>0)$. Also, the LC tilt angle of positive type NLC $({\Delta}n>0)$ decreased as increasing rubbing strength at the same baking temperature and time. The novel LC operating mode (HTOCB) that used the high tilt angle by the new alignment method was improved. The response time of the novel HTOCB cell was faster than that of conventional OCB cell. We suggest that the developed the novel HTOCB cell using control of tilt angle on the homeotropic surface is a promising technique for the achievement of a fast response time and a high contrast ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.502-505
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• 2004

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a SiC (Silicon Carbide) thin film. SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability make SiC an attractive candidate for electronic applications. A homeotropic alignment of nematic liquid crystal by ion beam (IB) exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface until annealing temperature of $300^{\circ}C$. Consequently, homeotropic alignment effect of liquid crystal and the good thermal stability by the ion beam alignment method on the SiC thin film layer can be achieved.