• 한국자기학회지
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• 제11권5호
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• pp.179-183
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• 2001

Glass/Ni$_{83}$Fe$_{17}$(2 nm)/[Cu(2 nm)Ni$_{83}$Fe$_{17}$(20 nm)]$_{50}$ 다층박막의 평면 홀 효과를 측정하였다. 평면 홀 효과에서 반복된 톱니모양의 홀 효과 신호가 관측되었다. 그 원인으로 갑작스러운 자벽의 이동이 홀 효과로 관측된 것이라는 가설을 세울 수 있다. 이러한 톱니모양의 평면 홀 효과는 모든 측정방향에서 관측되었다. 각 자성층의 전체 자화만이 자기저항을 결정하므로 자기저항의 특성곡선에서는 이러한 톱니모양에 해당하는 신호가 관측되지 않았다. 톱니모양의 근본 원인에 대한 연구는 더욱 수행되어야할 것이다.것이다.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.681-687
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• 2000

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.49-52
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• 2000

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details If the operating principle and secondary effects, and through the application If ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.49-52
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• 2000

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details if the operating principle and secondary effects, and through the application if ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

• Journal of Electrical Engineering and Technology
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• 제11권4호
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• pp.931-938
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• 2016

Application of vector control scheme for consumer products is enlarging to improve control performance. For the field-oriented control, accurate position detection is essential and generally requires expensive sensors. On the other hand, cost-reduction is important in home appliances, so that binary-type Hall-effect sensors are commonly used rather than using an expensive sensor such as an encoder. The control performance is directly influenced by the accuracy of the position information, and there exist non-uniformities related to Hall sensors in electrical and mechanical aspects, which result in distorted position information. Therefore, to get high-precision position information from low-resolution Hall sensors, this paper proposes a new position estimator consisting of a Kalman filter and feedforward compensation scheme, which generates a linearly changing position signal. The efficacy of the proposed scheme is verified by simulation and experimental results carried out with a 48-pole permanent magnet motor.

• 전기학회논문지P
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• 제53권4호
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• pp.171-174
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• 2004

The $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = $8.1686{\AA}$, b = $9.0425{\AA}$, c = $8.0065{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity was 1.080e-$3{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.1-5
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• 2000

Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

• Progress in Superconductivity
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• 제4권1호
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• pp.32-36
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• 2002

We have measured the Hall effect in infinite-layer Sr／sub 0.9／La／sub 0.1／$CuO_2$ thin films grown by molecular beam epitaxy. We do not observe $T^{2}$ dependence of the cotangent of Hall angle, which is commonly observed in other cuprate High-Tc superconductors. Therefore, this result cannot be interpreted within two different scattering mechanism based on charge-spin separation theory. The mixed-state Hall effect shows no sign anomaly, implying that tile hydrodynamic contribution of vortex core is negligibly small.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.251-253
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• 2002

We have fabricated a novel Vertical Trench Hall-Effect Device sensitive to the magnetic field parallel to the sensor chip surface for non-contact angular position sensing applications. The Vertical Trench Hall-Effect Device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT is measured.

• 한국초전도ㆍ저온공학회논문지
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• 제25권1호
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• pp.1-5
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• 2023

The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.