• The Journal of the Convergence on Culture Technology
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• v.7 no.3
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• pp.425-432
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• 2021

The purpose of this study was to examine the mediating effects of Informal Learning Activity on the relationship between Cultural Contents Industry Workers' Protean Career Attitude and Career Commitment. The results of this study were as follows: First, Protean career attitude of cultural contents industry workers had positive effect on career commitment. Second, Informal learning activity of cultural contents industry workers had partial mediating effect on the relationship between protean career attitude and career commitment. Based upon these results, several suggestions were suggested to promote cultural contents industry workers' protean career attitude, career commitment, and informal learning activity.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.42 no.2
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• pp.219-227
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• 2022

In Korea, as the aging phenomenon accelerates, the problem of traffic accidents related to the elderly is continuously emerging. Efforts to improve this are being implemented, but unfortunately the results of these effects are not clear. Therefore, in this study, the effect of traffic characteristics and incentive policies on the return of driver's licenses of elderly drivers was reviewed. As a result of the analysis, it was confirmed that the intention to return the driver's license was low in the case of men, older people, those with low dependence on public transportation, those who undertook long driving hours, and those who took frequent trips. On the other hand, financial incentives were found to play a positive role with regard to the intention to return the driver's license. However, the effect is expected to be insignificant for those with a low intention to return the driver's license. As a result, under the current policy, it is predicted that there is a limit to improving the social problems caused by elderly drivers, meaning that it is necessary to review approaches that induce the return of their driver's licenses.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.7
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• pp.499-509
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• 2016

The number of female government employees is increasing steadily; therefore, the importance of their effective management is also increasing. Recently, female government employees have organized and exploited their social networks to achieve career success. To obtain a better understanding of the consequences of social networking and its impact on female government employees, 262 female employees were asked to provide details about their experiences and attitudes regarding networking behavior (internal and external networking) and how they influenced affective commitment and individual adaptation performance. The results confirmed that social networking significantly increases emotional sharing, and leads to high levels of affective commitment and individual adaptation performance. The moderating roles that positive psychological capital play in the relationships between social networking (internal and external) and emotional sharing were also investigated. The results confirmed that positive psychological capital enhances the impact internal social networking has on affective commitment and individual adaptation performance. Managerial implications for developing effective female employee management strategies were provided for government managers. Based on these results, the theoretical and practical implications of the research findings are discussed, and recommendations for future research are provided.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8306-8313
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• 2015

Open-type current sensors have been commonly used for DC motor controller, AC variable controller and Uninterruptible Power Supply. Recently they have begun to be used more widely, as the growth of renewable energy and smart-grid in power system. Considering most of the open-type current sensors are imported, developing the core technology needed to produce open-type current sensors is required. This paper describes the development and test results of open-type current sensors. Design of C type magnetic core, selection and test of a Hall sensor, design of current source circuit and signal conditioning circuit are described. 100A class DIP(Dual In-line Package) type and SMD(Surface Mount Devide) type open-type current sensors was made and tested. Test results show that the developed open-type current sensor satisfies the accuracy requirement of 2% and linearity requirement of 2% at 100 A of DC and AC current of 60Hz. Temperature compensation was carried out by using a temperature compensation circuit with NTC(Negative Temperature Coefficient) thermistor and the effect of the temperature compensation are described.

• Journal of Astronomy and Space Sciences
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• v.19 no.1
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• pp.75-88
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• 2002

The climatological characteristics of the polar ionosphere is examined in terms of the ionospheric conductance and electric field. For this purpose, 109 days of measurements from the Sondrestrom incoherent scatter radar are utilized. By combining these two quantities, it is possible to deduce the overhead ionospheric current distributions. The ionospheric current density thus obtained is compared with the corresponding ground magnetic disturbance. Also examined is the effect of the field-aligned current on the ground magnetic disturbance, particularly on the D component Several interesting climatological characteristics about the ionosphere over the Sonderstrom are apparent from this study. (1) The conductance distribution is mainly due to solar EUV radiation during day-time On the other hand, the conductance distribution during the night-time is very low. (2) The conductance distribution one. the polar cap region during the day-time is controlled mostly by the solar EUV radiation, while it is extremely low during night-time wish the Hall and Pedersen conductances being 1.6 and 1.2 siemen, respectively (3) The region of the maximum N-S electric field tend to locate in the dayside sector. The E-W component of the electric field is stronger than that over Chatanika (4) The E-W auroal inospheric current (J/sub E/) is more important in the sunlit hemisphere than the night hemisphere. And a strong southward current is noted in the prenoon sector (5) There is a significant correlation between the overhead ionospheric current and the simultaneously observed ground magnetic disturbance. However, the assumption for the infinite sheet current approximation is far from realistic, underestimating the current density. And the correlation between ${\Delta}H$ and J/sub E/ is higher than the one between ${\Delta}D$ and J/sub N/ , indicating that field-aligned current affects significantly ${\Delta}D$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Korean Journal of Crystallography
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• v.12 no.4
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• pp.197-206
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• 2001

A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.127-136
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• 2001

A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.