• Bulletin of the Korean Chemical Society
• /
• 제20권1호
• /
• pp.65-68
• /
• 1999

Novel mononuclear group 13 metal complexes with the formula (R2M){NC5H4C(CH3)NNC(S)NH(C6H5)} (M=Al, R=iC4H9 (1); M=Ga, R=iC4H9 (2); M=Al, R=CH2SiMe3 (3); M=Ga, R=CH2SiMe3 (4)) result when 2-acetyl pyridine 4-phenyl-thiosemicarbazone ligand is mixed with trialkyl aluminum or trialkylgallium. These compounds 1-4 are characterized by microanalysis, NMR (1H, 13C) spectroscopy, mass spectra, and singlecrystal X-ray diffraction. X-ray single-crystal diffraction analysis reveals that 1 is mononuclear metal compound with coordination number of 5 and N, N, S-coordination mode.

• 한국식품위생안전성학회지
• /
• 제33권6호
• /
• pp.495-499
• /
• 2018

후춧가루에 존재하는 식중독 균을 저감화시키기 위한 방법으로 UV-C와 mild heat를 병합 처리 가능성을 타진하였다. Escherichia coli O157:H7 (ATCC 35150)와 Salmonella Typhimurium (ATCC 19585)를 후춧가루에 각각 $10^6$, $10^7CFU/g$ 수준으로 인위접종하여 $2.32W/cm^2$의 UV-C와 $60^{\circ}C$의 mild heat을 10분에서 70분 동안 처리하였다. 그 후 미생물 분석 및 후춧가루의 품질변화를 측정하였다. UV-C를 단독으로 70분 동안 처리했을 때 E. coli O157:H7과 S. Typhimurium는 각각 1.89, 2.24 log CFU/g 수준으로 감소하였지만, UV-C와 mild heat을 70분 동안 병합처리 했을 때는 각각 2.46, 5.70 log CFU/g으로 감소하였다. E. coli O157:H7 보다는 S. Typhimurium의 저감효과가 더 컸다. 색도는 모든 처리구에서 유의적인 차이가 없는 것으로 나타났다. 따라서 UV-C와 mild heat 병합처리는 후춧가루에 존재하는 식중독 균을 사멸시키는 데 효과적이기 때문에 산업적인 살균처리 기술로 활용될 수 있을 것으로 판단되었다.

• 한국결정성장학회지
• /
• 제7권3호
• /
• pp.487-493
• /
• 1997

SiC(4H) 결정에 Ti을 열증착하여 Ti/SiC(4H) 쇼트키(Schottky) 장벽 다이오드를 만들었다. SiC(4H)의 주개농도(donor concentration)는 전기용량-전압(C-V) 측정으로부터 $2.0{\times}10^{15}{\textrm}{cm}^{-3}$이었으며, 내부전위(built-in potential)는 0.65 V이었다. 전류-전압(I-V) 특성으로 부터 다이오드의 이상계수(ideally factor)는 1.07이었으며, 역방향 항복전장(breakdown field)은 약 $1.7{\times}10^3V/{\textrm}{cm}$이었다. 상온에서 $140^{\circ}C$까지 온도변화에 따라 측정된 포화전류로 부터 구한 전위장벽(potential barrier)은 0.91 V이었는데, 이는 C-V 특성으로 부터 구한 전위장벽과 거의 같았다.

• Nuclear Engineering and Technology
• /
• 제5권1호
• /
• pp.38-43
• /
• 1973

A $X_4$형분자인 C $H_4$, Si $H_4$, Ge $H_4$, C $F_4$, Si $F_4$ 및 Ge $F_4$의 양자 또는 불소원자핵의 spin과 분자의 회전사이의 상호작용의 크기를 나타내는 spin-rotation constant $c_{av}$ 를 분자선자기공명방법에 의하여 실험적으로 결정하였다. 강자장근사에 의한 Hamiltonian 은 W $m_{I}$ $m_{J}$=- $g_{I}$ $m_{I}$H- $g_{J}$ $m_{J}$H- $C_{av}$ $m_{I}$ $m_{J}$로 주어지며, $c_{av}$ 는 C tensor의 trace의 3분지 1이 된다. 원자핵자기공오곡선은 v=- $g_{I}$H- $c_{av}$ $m_{J}$로 주어지는 여러개의 회전광공오선의 중첩으로 이룩되며, 전체곡선은 Gauss곡선으로 근사하여 $c_{av}$ 값을 구하였다. 회전공오선은 v= $g_{J}$H- $C_{av}$ $m_{I}$로 주어지며, $m_{I}$는 0, $\pm$1, $\pm$2의 값을 갖는다. $c_{av}$ 의 크기는 인접하는 두 회전공오곡선사이의 진동수치로서도 구할수 있다. 본실험에서 원자핵공오과 회전공오 공히 이용되였다. $c_{av}$ 의 부호는 분자선자기공오실험에서 쓰이는 방법으로서, 양자화되여서 불균일자장에서 분리된 분자선을 진행하는 방향의 좌측 또는 우측에서 부분적으로 차단하면서, 공오곡선의 변화를 보는것으로, 결정된 부호 와 $c_{av}$ 의 크기는 다음과 같다. C $H_4$; -10.3$\pm$0.4kHz Si $H_4$; +3.71$\pm$0.08kHz / Ge $H_4$; +3.79$\pm$0.13kHz C $F_4$; -6.81$\pm$0.08kHz / Si $F_4$; -2.46$\pm$0.06kHz Ge $F_4$; -1.84$\pm$0.04kHz

• Bulletin of the Korean Chemical Society
• /
• 제25권7호
• /
• pp.986-990
• /
• 2004

Condensation of salicylaldehyde $(2-HOC_6H_4C(O)H)$ with allylamine afforded the unsaturated salicylaldimine, $2-HOC_6H_4C(H)=NCH_2CH=CH_2$. Similar reactivity was observed with substituted salicylaldehydes. Further reaction of these Schiff bases with palladium acetate or $Na_2PdCl_4$ afforded complexes of the type $PdL_2$, where L = deprotonated Schiff base. The molecular structure of the parent salicylaldimine palladium complex $[trans-(2-OC_6H_4C(H)=NCH_2CH=CH_2)_2Pd]$ (1) was characterized by an X-ray diffraction study. Crystals of 1 were monoclinic, space group $P2_1/n,\;a\;=\;14.0005(9)\;{\AA},\;b\;=7.2964(5)\;{\AA},\;c\;=\;17.5103(12)\;{\AA},\;{\beta}\;=\;100.189(1)^{\circ}$, Z = 4. Analogous chemistry with 4-vinylaniline also gave novel palladium complexes containing a pendant styryl group. Crystals of $[trans-(2-HOC_6H_4C(H)=N-4-C_6H_4CH=CH_2)_2Pd]$ (4) were monoclinic, space group $P2_1/c$, a = 13.7710(14) ${\AA}$, b = 11.0348(11) ${\AA}$, c = 7.8192(8) ${\AA}$, ${\beta}\;=\;98.817(2)^{\circ}$, Z = 2.

• 한국세라믹학회지
• /
• 제31권10호
• /
• pp.1231-1239
• /
• 1994

In this study, gel powder which had relatively high hydration reactivity in CaO and P2O5 rich composition of CaO-P2O5-SiO2-H2O system was prepared by sol-gel process and its hydrated specimen was manufactured. The it was investigated to appropriate calcination temperature in sol-gel process which hydrated specimen of gel powder have proven to strength and the effect of factors influenced strength in hydration process. The major product of before and after hydration reaction was hydroxyapatite, and crystalline phase of C-S-H was already formed during gelation process. After hydration reaction of pressed specimen, crystalline phase of C-S-P-H was formed. It was hydrated product of silicocarnotite (5CaO.P2O5.SiO2). Gel phases of C-S-H and C-S-P-H occured as a result of partial substitution of amorphous silica by P2O5 was formed. The strength of hydrated hardened body is developed by strong bonding and bridging between the gel phases of C-S-H or C-S-P-H and the crystalline products such as hydroxyapatite, Ca(OH)2 C-S-H and C-S-P-H. In addition, the ultrafine gel powder have an great effect on increase of hydration reaction.

• 한국결정학회지
• /
• 제1권1호
• /
• pp.19-28
• /
• 1990

단결정 6H-SiC는 에너지갭이 3.0eV인 반도체로서 청색발광소자 및 고온반도체소자로 응용이 기대되는 재료이다. 본 연구에서는 청색발광소자 제작을 위해 6H-SiC 단결정을 승화법으로 성장시켰다. 승화법으로 성장시 성장도가니내의 온도구배를 44℃/cm, 성장온도는 1800-1990℃ 압력은 50-1000 mTorr이었다. 사용한 종자정은 에치슨법으로 성장시킨 SiC 단결정을 사용하였다. 성장된 6H-SiC 결정은 종자징위에 epitaxial growtll를 하였음을 편광현미경과 Back reflection Xray Laue 법으로 확인하였다. 성장조건을 변화시켰을 때 생성되는 결정상의 변화를 XRD로 조사하였다. 성장 온도가 1840℃ 이상일 경우에는 6H-SiC이 성장되었으며, 그 이하에서는 6H-SiC가 성장되었다. 또한 3C-SiC는 저온 저파포화도 성장조건에서 성장되는 상임을 확인하였다. van der Pauw측정법에의한 전기적 특성을 조사하였는데, 전도형은 p형이고 hole 농도와 이동도는 7.6x1014cm-3와 19cm2 V-1sec-1였다.

• 대한수학회논문집
• /
• 제9권4호
• /
• pp.831-836
• /
• 1994

In this paper we characterize the quasiaffine transforms of quasisubscalar operators. Let H and K be separable, complex Hilbert spaces and L(H,K) denote the space of all linear, bounded operators from H to K. If H = K, we write L(H) in place of L(H,K). A linear bounded operators S on H is called scalar of order m if there is a continuous unital morphism of topological algebras $$ \Phi : C^m_0(C) \to L(H) $$ such that $\Phi(z) = S$, where as usual z stands for identity function on C, and $C^m_0(C)$ stands for the space of compactly supproted functions on C, continuously differentiable of order m, $0 \leq m \leq \infty$.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
• /
• pp.271-284
• /
• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• 한국표면공학회지
• /
• 제29권6호
• /
• pp.648-653
• /
• 1996

Hydrogenated amorphous carbon(a-C:H) films are prepared by rf plasma CVD in a $CH_4$ source gas system diluted with Ar of $H_2$. The spectra of emissive and reactive species in the plasma are detected using in stiu optical emission spectroscopy. Inaddition, the relationship between the film properties which can be varied by the deposition parameters and the Raman spectra is studied. In the $CH_4/H_2$ gas system, the emission intensities of CH and $H \tau$ decrease and those of $H \alpha$, $H \beta$, $C_2$ and Ar increase with increasing $H_2$ concentration, The formation of $C_2$ and CH in the $CH_4/Ar/H_2$ gas system is greatly suppressed by hydrogen addition and the excess of hydrogen addition is found to form graphite structure. The $C_2$ formation in the gas phase enhances a-C:H film formation.