• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.4
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• pp.15-21
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• 2004

The optical characteristics; luminous flux, correlated color temperature, and CIE -chromaticity coordinate etc., of HB LED(high brightness light emitting diode) of yellow/green/white SMD(surface mounted device) type were tested with integrating sphere photometer and monochromator, and the results were comparatively evaluated And, for the white LED, color rendering indices were considered to analyze.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.3
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• pp.20-26
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• 2004

In this paper, luminaire optical efficiency and luminous intensity according to array of HB(high brightness) white LED(light emitting diode) and globe types of luminaire were simulated by computer and made a comparative analysis. LEDs were arranged by square of 7ea X 7ea. LED space has been divided into 8.2mm, 10mm and 15mm that mean distances between luminous centers of LEDs, and luminaire globes were classified into 30mm and 50mm 묘묘 from luminous center of LEDs. Also the simulations were made with / without globe, globe types were specified by convex and embossing types of which sizes are 8.2mm and 5.0mm, So total 27 classes of simulation were performed. This paper is to help luminire development using LED light source called digital lighting of 21th century, by studying luminire effciency and luminous intensity of different types of globes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.68-72
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• 2008

AlGaInP high-brightness LEDs(HB-LEDs) have gained importance a variety of application operating in the red, orange, yellow and yellow-green wavelength. The light generated from inside LED chips should be emitted to the air through the surfaces of the chips. However, because of the differences between the semiconductor and air or epoxy's refractive index, some of the light was blocked so that caused lowering external quantum efficiency. In this study, nano-scale roughness on the top-GaP layer of AlGaInP epitaxial wafer was fabricated to improve' the brightness of AlGaInP LEDs. Nano-scale roughness was made by ICP dry etcher. Our AlGaInP LEDs with nano-scale roughness has higher brightness (about 28.5 %) than standard AlGaInP LEDs.