• Membrane and Water Treatment
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• v.13 no.4
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• pp.201-208
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• 2022

Emulsion Liquid Membrane (ELM) is a prominent technique for the separation of heavy metal ions from wastewater due to the fast extraction and is a single-stage operation of stripping-extraction. The selection of the components (Surfactant and Carrier) of ELM is a very significant step for its preparation. In the ELM technique, the primary water- in-oil (W/O) emulsion is emulsified in water to produce water-in-oil-in-water (W/O/W) emulsion. The water in oil emulsion was prepared by mixing the membrane phase and internal phase. To prepare the membrane phase, the extractant D2EHPA (di-2-ethylhexylphosphoric acid) was used as a mobile carrier, Span-80 as a surfactant, and Paraffin as a diluent. Moreover, the internal (receiving) phase was prepared by dissolving sulphuric acid in water. Di-(2- ethylhexyl) phosphoric acid such as surfactant concentration, carrier concentration, sulphuric acid concentration in the receiving (internal) phase, agitation time (emulsion phase and feed phase), the volume ratio of the membrane phase to the receiving phase, the volume ratio of the external feed phase to the primary water-in-oil emulsion and pH of feed were studied on the percentage extraction of metal ions at 20℃. The results show that it is possible to remove 78% for As(V), 98% for Cd(II), and 99% for Pb(II). Emulsion Liquid Membrane (ELM) is a well-known technique for separating heavy metal ions from wastewater due to the fast extraction and is a single-stage operation of stripping-extraction. The selection of ELM components (Surfactant and Carrier) is a very significant step in its preparation. In the ELM technique, the primary water-in-oil (W/O) emulsion is emulsified to produce water-in-oil-in-water (W/O/W) emulsion. The water in the oil emulsion was prepared by mixing the membrane and internal phases. The extractant D2EHPA (di-2-ethylhexylphosphoric acid) was used as a mobile carrier, Span-80 as a surfactant, and Paraffin as a diluent. Moreover, the internal (receiving) phase was prepared by dissolving sulphuric acid in water. Di-(2-ethylhexyl) phosphoric acid such as surfactant concentration, carrier concentration, sulphuric acid concentration in the receiving (internal) phase, agitation time (emulsion phase and feed phase), the volume ratio of the membrane phase to the receiving phase, the volume ratio of the external feed phase to the primary water-in-oil emulsion and pH of feed were studied on the percentage extraction of metal ions at 20℃. The results show that it is possible to remove 78% for As(V), 98% for Cd(II), and 99% for Pb(II).

• Bulletin of the Korean Mathematical Society
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• v.38 no.4
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• pp.773-786
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• 2001

On the setting of the half-space of the Euclidean n-space, we consider harmonic Bergman spaces and we also study properties of the reproducing kernel. Using covering lemma, we find some equivalent quantities. We prove that if lim$ lim\limits_{i\rightarrow\infty}\frac{\mu(K_r(zi))}{V(K_r(Z_i))}$ then the inclusion function $I : b^p\rightarrow L^p(H_n, d\mu)$ is a compact operator. Moreover, we show that if f is a nonnegative continuous function in $L^\infty and lim\limits_{Z\rightarrow\infty}f(z) = 0, then T_f$ is compact if and only if f $\in$ $C_{o}$ (H$_{n}$ ).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.101-105
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• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• Composites Research
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• v.15 no.1
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• pp.1-8
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• 2002

In this study, the flutter analysis for a rectangular box wing and an actual fighter wing with composite shin, aluminum spar and aluminum rib has been conducted. A conservative 3D wing-box model of an actual wing is modeled by MSC/PATRAN and the corresponding free vibration analysis has been performed by MSC/NASTRAN. The finite elements of membrane, rod and shear panel are used. Using the practical ply angles, various composite laminates are composed and analysed. The DLM code which is linear aerodynamic theory in frequency domain is applied to calculate unsteady aerodynamic pressure in subsonic flow region and the V-g and p-k methods are applied to obtain the solution of aeroelastic governing equation in frequency domain.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.05a
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• pp.114-117
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• 2004

The isothermal forging design of a Ti-6Al-4V wing shape was performed by 3D FE simulation. The design focuses on near-net shape forming by the single stage. The process variables such as the die design, pre-form shape and size, ram speed and forging temperature were investigated. The minimization of forging load and uniform strain distribution in a given forging condition were considered as main design factors. The FE simulation results fur the final process design were compared with the isothermal forging tests. Finally, the modified process design for producing the uniform Ti-6Al-4V wing product without forming defects was suggested.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.53-56
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• 2004

The a-Si:H TFT using ferroelectric of SrTi $O_3$as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$and S $i_3$ $N_4$. Ferroelctric increases on-current, decreases thresh old voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, refractive index of 1.8~2.0 and resistivity of 10$^{13}$ - 10$^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60~100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8~20${\mu}{\textrm}{m}$ and channel width of 80~200${\mu}{\textrm}{m}$. And it shows that drain current is 3.4$mutextrm{A}$ at 20 gate voltage, $I_{on}$ / $I_{off}$ is a ratio of 10$^{5}$ - 10$^{8}$ and $V_{th}$ is 4~5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $mutextrm{A}$ at 20 gate voltage and $V_{th}$ is 5~6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.zed.d.

• Proceedings of the KSME Conference
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• 2000.11a
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• pp.304-309
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• 2000

Strain gage method is used to evaluate the mode I dynamic stress intensity factor of marging steel(18Ni) and titanium alloy(Ti-6A1-4V). To decide the best strain gage position on specimen, static fracture toughness test was performed. Then instrumented charpy impact test and dynamic tensile test was performed by using strain gage method for evlauating dynamic stress intensity factor. Strain gage signals on the crack tip region are used to calculate the stress intensity factors. It is found that strain gage method is more useful than method by using load which is obtained from impact tup to assess dynamic characteristics such as dynamic stress intensity factor.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.437-440
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• 2017

본 논문에서는 Edison simulation을 이용하여 2D TMD(Transition Metal Dichalcogenides)물질인 $MoS_2$의 monolayer 구조에서 화학/물리적 특성 분석을 통해 대칭 구조인 $2H-MoS_2$의 안정성과 1.8 eV의 direct bandgap을 추출하여 전자재료로서의 가치를 확인하였다. 또한 Edison TMD FET 소자 특성 simulation을 이용하여 $2H-MoS_2$ 결정 면의 이방성으로 인한 소자 성능의 변화를 확인 하였고, 최적의 결정 면에서 최적화된 소자를 설계하여 29.6% 개선된 $I_{on}/I_{off}$ 값과 32.6% 개선된 mobility 값을 추출하였다.

• Proceedings of the KIEE Conference
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• 2003.07a
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• pp.528-530
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• 2003

UPFC Pilot plant project의 결과물로써 설계, 제작된 80MVA급 UPFC(Unified Power Flow Controller)는 현재 강진변전소 강진-장홍 154kV 선로에 설치되어 commissioning 시험을 완료하고 시험 운전되고 있다. UPFC는 기존에 수동적으로 제어하였던 선로의 전압, 임피던스 및 위상각을 능동적으로 제어함으로써 전력공급의 신뢰성 및 유연성을 높일 수 있다. 이러한 기능을 갖는 UPFC의 시험 운전을 통하여 UPFC의 기기자체의 성능을 검증하고 기기의 운전 영역의 변화가 인근의 계통에 미치는 영향에 대하여 조사하였다.