• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.79-83
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• 2002

As Ag does not form my silicide on Si surfaces, Ag wire is a candidate for self-assembled nanowire on the reconstructed and single-domain Si(5 5 12)-2 $\times$ 1. In the present study, various Ag coverages and post-annealing temperatures had been tested to fabricate a Ag nanowire with high aspect ratio. When Ag coverage was less than 0.03 ML and the post-annealing temperature was 500(C, Ag atoms preferentially adsorbed on the tetramer sites resulting in Ag wires with an inter-row spacing of ~5 nm. However, its aspect ratio is relatively small and its height is also not even. On the other hand, the Ag-posited surface completely loses its reconstruction even with the same annealing at 500 $\^{C}$ if the initial coverage exceeds 0.05 ML. But the additional subsequent annealing at 700$\^{C}$ and slow-cooling process recovers the well-ordered Ag chain with relatively high aspect ratio on the same tetramer sites. It can be understood that, in the double step annealing process, the lower temperature annealing is required for cohesion of adsorbed Ag atoms and the higher temperature annealing is for providing Ag atoms to the tetramer sites.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.102-106
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• 2005

The crystal structure of the title compound has been analyzed by single crystal X-ray diffraction method. The compound crystallized in the triclinic space group $P\bar{1}$ with a=11.300(6) ${\AA}$, c=18.716(10) ${\AA}$, ${\alpha}=82.833(10)^{\circ}$, ${\beta}=83.042(11)^{\circ}$, ${\gamma}=66.139(10)^{\circ}$, $V=2162(2)\;{\AA}^{3}$, Z=2 and R1=0.661 for 10578 unique reflections. The four $C_{5}Me_{5}$ planar groups from a tetrahedron with a mean dihedral angle $70.92(9)^{\circ}$ among them and the $Ti_{4}O_{6}$ cage sits at the center of the tetrahedron. Each Ti atom in the $Ti_{4}O_{6}$ cage is bonded by three bridging oxygen atoms and coordinated by a $C_{5}Me_{5}$ ligand with a mean distance $2.067{\AA}$ from Ti atoms to the centroids of the four five-membered rings. Two oxygen atoms facing each other in $Ti_{4}O_{6}$ cage are $4.051(3){\AA}$ away in average.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.161-164
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• 2001

Transmuted impurity atoms formed in neutron-irradiated ZnO thin films were theoretically identified first and then experimentally confirmed by Photoluminescence (PL). ZnO thin films grown by plasma-assisted molecular beam epitaxy were irradiated by neutron beam at room temperature. Among eight isotropes naturely exiting in ZnO films, only $^{64}Zn$, $^{68}Zn$, $^{70}Zn$ and $^{18}O$ were expected to transmute into $^{65}Cu$, $^{69}Ga$, $^{71}Ga$ and $^{19}F$, respectively. The concentrations of these transmuted atoms were estimated by considering natural abundance, neutron fluence, and neutron cross section. The neutron-irradiated ZnO thin films were characterized by PL. In the PL spectra of these ZnO thin film, the Cu-related PL peaks were seen, but the Ga- or F-associated PL peaks were absent. This observation demonstrates the existence of $^{65}Cu$ in the ZnO. In this paper, emission mechanism of Cu impurities wil1 be described and the reason for the absence of the Ga- or F-associated PL peaks will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.125.2-125.2
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• 2016

Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3244-3248
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• 2014

Two ethylenediamine cobalt(II) oxalate complexes Co(ox)(en), 1 and $Co(ox)(en){\cdot}2H_2O$, 2 have been hydrothermally synthesized and characterized by single crystal X-ray diffraction, IR spectrum, TG analysis, and magnetic measurements. In 1, Co atoms are coordinated by two bis-bidentate oxalate ions in transconfiguration to form Co(ox) chains, which are further bridged by ethylenediamine molecules to produce 2D grid layers, Co(ox)(en). In 2, Co atoms are coordinated by bridging oxalate ions in cis-configuration to form Co(ox) chains, and the additional chelation of ethylenediamine to Co atoms completes 1D zigzag chain, Co(en)(ox). Two lattice water molecules stabilize the chains through hydrogen bonding. Magnetic susceptibility measurements indicate that both complexes exhibit weak antiferromagnetic coupling between cobalt(II) ions with the susceptibility maxima at 23 K for 1 and 20 K for 2, respectively. In 1 and 2, the oxalate ligands afford a much shorter and more effective pathway for the magnetic interaction between cobalt ions compared to the ethylenediamine ligands, so the magnetic behaviors of both complexes could be well described with 1D infinite magnetic chain model.

• Journal of the Mineralogical Society of Korea
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• v.15 no.1
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• pp.44-58
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• 2002

A new polymorph of tridymite, an incommensurately modulated phase (IC phase), has been identified. While the symmetry of the IC lattice is same as that of the Ll phase, the geometry of the IC lattice structure is same as the basis of the L3 structure with a different modulation (modulation vector q=0.22 $c*_{H}$;$\lambda$ 37 ). On the other hand, the characteristic curved diffuse diffration observed from the Ll atoms could occur even at room phase suggests that the dynamic disordering of atoms, especially oxygen atoms could occur even at room temperature. The phase transition of Ll to L3 by grinding is gradual but very conspicuous: LllongrightarrowL1+IClongrightarrowIC+L3longrightarrowL3. However, it is revealed that real transition processes of individual grains are directly related to the local stress fields and preexisting microstructures.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1253-1257
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• 2011

The surface structures, adsorption conditions, and thermal desorption behaviors of cyclopentanethiol (CPT) self-assembled monolayers (SAMs) on Au(111) were investigated by scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and thermal desorption spectroscopy (TDS). STM imaging revealed that although the adsorption of CPT on Au(111) at room temperature generates disordered SAMs, CPT molecules at $50^{\circ}C$ formed well-ordered SAMs with a $(2{\surd}3{\times}{\surd}5)R41^{\circ}$ packing structure. XPS measurements showed that CPT SAMs at room temperature were formed via chemical reactions between the sulfur atoms and gold surfaces. TDS measurements showed two dominant TD peaks for the decomposed fragments ($C_5H_9^+$, m/e = 69) generated via C-S bond cleavage and the parent molecular species ($C_5H_9SH^+$, m/e = 102) derived from a recombination of the chemisorbed thiolates and hydrogen atoms near 440 K. Interestingly, dimerization of sulfur atoms in n-alkanethiol SAMs usually occurs during thermal desorption and the same reaction did not happen for CPT SAMs, which may be due to the steric hindrance of cyclic rings of the CPT molecules. In this study, we demonstrated that the alicyclic ring of organic thiols strongly affected the surface structure and thermal desorption behavior of SAMs, thus providing a good method for controlling chemical and physical properties of organic thiol SAMs.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.158-158
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• 1999

The post ion implantation has been applied to modify early-grown BN layer and improve the adhesion of the BN films. The effect of ion implantation doses on microstructure and interlayer was investigated by FTIR and HRTEM. And the hardness and delamination life time of N+-implanted BN films were measured. With increasing the ion dose up to 5.0×1015atoms/㎠, the change of IR spectrum is observed. At 5.0×1016atoms/㎠, a drastic transition of cubic phase into hexagonal phase is detected. The change of microstructure of early-grown layers by ion implantation is confirmed using HRTEM. Both microhardness and delamination life time of BN films increase with ion dose. The modification model of early-grown BN layers is briefly discussed based on the displacement per atom and excess boron in the BN film induced by ion irradiation.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.183-188
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• 2008

We have studied the chemisorption of oxygen at room temperature on Fe layers deposited on Pt(111) substrates by using core-level X-ray photoelectron spectroscopy. It was found that the oxygen atoms are chemisorbed when the thickness of the Fe layers is not larger than 6 monolayers. Upon post-annealing, it was found that part of the chemisorbed atoms are desorbed at a temperature range 600 - 700 K, after which the intermixing between Fe and Pt atoms occurs. The overall trend of this intermixing was very similar to the Fe/Pt(111) surface without oxygen exposure. The remaining oxygen adatoms, the amount of which is about a half of the total, were found to be eventually desorbed from the surface upon post-annealing at 1000 K. The binding energy of this phase was higher than that of the oxygen atoms desorbed at lower temperatures by 1.3 eV.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.59-67
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• 1998

In this paper, a rigorous three-dimensional Monte Carlo approach to simulate the sputter yield as a function of the incident ion energy and the incident angle as well as the atomic ejection distribution of the target is presented. The sputter yield of the target atom (Cu, Al) has been calculated for the different species of the incident atoms with the incident energy range of 10 eV ~ 100 KeV, which coincides with the previously reported experimental results. According to the simulation results, the calculated sputter yield tends to increase with the amount of the energy of the incident atoms. Our simulation revealed that the maximum sputter yield can be obtained for the incident atom with 10 KeV for the heavy ion, while the maximum sputter yield for the light ion is for the incident atoms with an energy less than 1 KeV. The sputter yield increases with angle of incidence and seems to have the maximum value at 68$^{\circ}$. For angular distributions of the sputtered particle, the atoms in the direction normal to the surface increase with angle of incidence. Furthermore, we has conducted the parallel computation on CRAY T3E supercomputer and built a GUI(Graphic User Interface) system running the sputter simulator.