• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.106-106
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• 1999

반도체 소자가 소브마이크론 이하로 집적화 되어감에 따라, RC 신호 지연 및 간섭 현상, 전력 소비의 증가 문제가 심각하게 대두되고 있다. 이러한 문제를 개선하기 위해서는, 현재 층간 절연막으로 상용화되어 있는 SiO2 박막을 대체할 저유전율 박막의 개발이 필수적이며, 많은 연구자들이 여러 가지 새로운 유기물질과 무기물질은 제안하고 있다. 반도체 공정상의 적합성을 고려할 때, 이들 여러물질 중에서 알킬기를 함유한 SiO2 박막(이하 'Si-O-C-H 박막'으로 표기)에 많은 관심이 집중되고 있다. Si-O-C-H 박막은 알킬기에 의해 형성된 나노 스케일의 기공에 의해 작은 유전율을 가지게 된다. 따라서, 박막내의 알킬기의 함유량이 많을수록 보다 작은 유전율을 얻을 수 있다. 그러나 과다한 알킬기의 함유는 Si-O-C-H 박막의 열적 특성을 열화시키는 부정적인 효과도 있다. 본 연구에서는 bis-trimethylsilylmethane(BTMSM, H9C3-Si-CH2-Si-C3H9) precursor를 이용하여 Si-O-C-H 박막을 증착하였다. BTMSM precursor의 중요한 특징중 하나는, 두 실리콘 원자 사이에 Si-CH2 결합이 존재한다는 사실이다. Si-CH2 결합은 양쪽의 Si에 의해 강하게 결합되어 있어서, BTMSM precursor를 사용하여 Si-O-C-H 박막은 유전상수도 작을 뿐 아니라, 열적으로도 안정된 특성이 얻어질 것으로 기대된다. Si-O-C-H 박막의 열적 안정성을 평가하기 위하여, 고온 열처리 전후의 FT-IR 스펙트럼 분석과 C-V(capacitance-voltage) 측정에 의한 유전상수 변화를 살펴보았다. 또한 증착된 박막의 미세구조 및 step coverage 특성 관찰을 위하여 SEM(scanning electron microscopy) 및 TEM(transmission electron micfroscopy) 분석을 하였다. 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다. 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.phology 관찰결과 Ge 함량이 높은 박막의 입계가 다결정 Si의 입계에 비해 훨씬 큰 것으로 나타났으며 근 값도 증가하는 것으로 나타났다. 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.69-75
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• 2009

To obtain precise information about characteristics of gamma ray detector system responses, we developed new GUI computer program to analize full-energy absorption peak using our developed Delphi computer code for educational purpose. By use of the well known 4 nonlinear peak shaping functions, peaks were fitted with least square fit method in this code. In this paper, we described the methods to search for 12 coefficients in above 4 nonlinear peak shaping functions by use of our developed code in details. The computer code was tested for 1 $\mu$Ci $^{137)Cs$ 661 keV gamma ray peak spectrum detected by 25 % relative efficiency HPGe detector with 5.35 cm (D) $\times$ 5.5 cm (L) size.

• Journal of the Korean GEO-environmental Society
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• v.10 no.7
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• pp.135-141
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• 2009

For more reliable estimation of soil-structure interaction and seismic source and attenuation properties, site amplification function should be considered. This study use the Nakamura's method (1989) for estimating site amplification though various methods for the same purpose have been proposed. This method was originally applied to the surface waves of background noise and therefore there are some limitation for applications to general wave energy. However, recently this method has been extended and applied to the S wave energy successfully. This study applied the method to the coda wave energy which is equivalent to the backscattered S wave energy. We used more than 60 observed ground motions from 5 earthquakes which occurred recently, with magnitude range from 3.6 to 5.1 Each station showed characteristic site amplification property in low-, high- and resonance frequency ranges. In the case of comparing these results to those from S wave energy, lots of information to the site classification work can be gained. Moreover, removal of site amplification can give us more reliable seismic source parameters.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.218-224
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• 1998

2nO and $Al_{2}O_{3}$ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at $900^{\circ}C{\sim}1200^{\circ}C$ for 3 h in vacuum($3{\times}10^{-5}$ Torr). According to XRD, remnant ZnO and $Al_{2}O_{3}$ not converted to $ZnAl_{2}O_{4}$ were observed up to $1100^{\circ}C$, which were completely changed to$ZnAl_{2}O_{4}$ ternary compound at $1200^{\circ}C$. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at $1200^{\circ}C$.

• The Journal of Engineering Geology
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• v.22 no.4
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• pp.399-408
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• 2012

To estimate seismic source and soil-structure interaction more reliably, site amplification characteristics should be considered. Among the various estimation methods, we used Nakamura's method (1989) to estimate site amplification. This method was originally applied to background noise; however, it has recently been successfully applied to S-wave and Coda-wave energy, and is applied to S-waves in the present study. We used more than 180 observed ground motions from 23 macro-earthquakes and then analyzed site amplification characteristics at eight seismic stations. Each station showed characteristics of site amplification properties in the low-, high- and resonance-frequency ranges. Comparison of the present results with those of other studies provide successful information regarding the dynamic amplification of domestic site characteristics and site classification.

• Geophysics and Geophysical Exploration
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• v.10 no.3
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• pp.183-190
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• 2007

The site effects of seismic stations were evaluated by conducting a simultaneous inversion of the stochastic point-source ground-motion model (STGM model; Boore, 2003) parameters based on the accumulated dataset of horizontal shear-wave Fourier spectra. A model parameter $K_0$ and frequency-dependent site amplification function A(f) were used to express the site effects. Once after a H/V ratio of the Fourier spectra was used as an initial estimate of A(f) for the inversion, the final A(f) which is considered to be the result of combined effect of the crustal amplification and loca lsite effects was calculated by averaging the log residuals at the site from the inversion and adding the mean log residual to the H/V ratio. The seismic stations were classified into five classes according to $logA_{1-10}^{max}$(f), the maximum level of the site amplification function in the range of 1 Hz < f < 10 Hz, i.e., A: $logA_{1-10}^{max}$(f) < 0.2, B: 0.2 $\leq$ $logA_{1-10}^{max}$(f) < 0.4, C: 0.4 $\leq$ $logA_{1-10}^{max}$(f) < 0.6, D: 0.6 $\leq$ $logA_{1-10}^{max}$(f) < 0.8, E: 0.8 $\leq$ $logA_{1-10}^{max}$(f). Implication of the classified result was supported by observing a shift of the dominant frequency of average A(f) for each classified stations as the class changes. Change of site classes after moving seismic stations to a better site condition was successfully described by the result of the station classification. In addition, the observed PGA (Peak Ground Acceleration)-values for two recent moderate earthquakes were well classified according to the proposed station classes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.11-20
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• 1994

GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to $585^{\circ}C$ and the $As_4$/Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of $0.9~1.1 {\mu}m/h$, the impurity concentrations were in the ranges of $1.5{\times}10^{14}~5.6{\times}10^{14}cm^{-3}$ with the Hall mobilities of $590~410cm^2/V-s$. In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (<1%). AlGaAs layers with good surface morphology and crystallinity were grown under an optimum condition of the substrate temperature, $600^{\circ}C $. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.

• The Journal of Engineering Geology
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• v.23 no.4
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• pp.435-445
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• 2013

Since design response spectrum does not reflect local soil characteristics, site specific response spectrum of observed ground motions appears relatively higher than design response spectrum at high frequency range. These problems have been pointed out from the domestic seismic design industry. Among various estimation methods, this study used the method H/V ratio of ground motion for estimating site amplification. This method has been extended to background noise, Coda waves and S waves recently for estimating site amplification. This study applied this method to the background noise and Coda wave energy. This study analysed more than 267 background noises from 15 macro earthquakes including main Fukuoka earthquake (2005/03/20, M=6.5) and then compared to results from S waves, at 8 main domestic seismic stations. The results showed that most of the domestic seismic stations gave similar results to those from S waves. Each station showed its own characteristics of site amplification property in low, high and specific resonance frequency ranges. Comparison of this study to other studies using different method can give us much information about dynamic amplification of domestic sites characteristics and site classification.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.707-713
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• 1997

HVPE(hydride vapor phase epitaxy)법으로 (111)MgAI$_{2}$ $O_{4}$기판위에 GaN 후막을 성장하였다. GaN를 성장하기 전에 기판에 표면을 GaCI로 처리한 수 성장하였을 때 이중 X선 회절 피크의 반치폭이 710 arcsec로서 N $H_{3}$로 처리한 후 성장한 GaN에 비하여 작았으며, 무색 투명의 경면상태가 얻어\ulcorner다. 113$0^{\circ}C$의 온도에서 성장한 GaN 의 광루미네센스(PL)특성과 동일하게 나타났다. 10K의 온도에서 측정된 PL 스펙트럼은 자유여기자와 속박여기자의 재결합천이에 의한 피크들과 Mg과 관련된 도너-억셉터 쌍 사이의 재결합 및 이의 1LO, 2LO, 3LO 및 4 LO 포논복제에 의한 피크들이 나타났다. 성장된 GaN는 n형의 전도성을나타내었으며, 캐리어 이동도와 농도는 각각 21.3$\textrm{cm}^2$/V ㆍsec와 4.2 x $10^{18}$$cm^{-3}$이었다.

• Applied Chemistry for Engineering
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• v.19 no.3
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• pp.299-303
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• 2008

A thermally cross-linkable polymer, poly[(2,5-dimethoxy-1,4-phenylenevinylene)-alt-(1,4-phenylenevinylene)] (Cross-PPV), was synthesized by the Heck coupling reaction. In order for the polymer to be cross-linkable, 20 mol% excess divinylbenzene was added. The chemical structure of Cross-PPV and thermally crosslinked Cross-PPV were confirmed by FT-IR spectroscopy. From the FT-IR, UV-Vis, and PL spectral data, thermally crosslinked Cross-PPV was insoluble in common organic solvents. The HOMO and LUMO energy level of thermally cross-linked Cross-PPV were estimated -5.11 and -2.56 eV, respectively, which were determined by the cyclic voltammetry and UV-Vis spectroscopy. From the energy level data, one can easily notice that thermally crosslinked Cross-PPV can be used for hole injection layer effectively. Bilayer structured device (ITO/crosslinked Cross-PPV/PM-PPV/Al) was fabricated using poly(1,4-phenylenevinylene-(4-dicyanomethylene-4H-pyran)-2,6-vinylene-1,4-phenylenevinylene-2,5-bis(dodecyloxy)-1,4-phenylenevinylene (PM-PPV) as the emitting layer, which have HOMO and LUMO energy levels of -5.44 eV and -3.48 eV, respectively. The bilayered device had much enhanced the maximum efficiency (0.024 cd/A) and luminescence ($45cd/m^2$) than those of a single layer device (ITO/PM-PPV/Al, 0.003 cd/A, $3cd/m^2$). The enhanced performance originated from that fact that cross-linked Cross-PPV facilitatse the hole injection to the emissive layer and the injected hole and electron from ITO and Al are recombined in emitting layer (PM-PPV) effectively.