• Journal of Digital Convergence
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• v.12 no.4
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• pp.251-257
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• 2014

In u-Healthcare environment, large amounts of important vital information is processed through M2M(Machine to Machine). M2M is configured by wireless networks and has several problems for limited bandwidth and low reliability. Therefore, in this paper is proposed a method called uHLZW(u-Healthcare LZW) to improve channel efficiency to solve such problem. uHLZW algorithm has high compression ratio for vital data. The results showed that the average compression ratio of uHLZW got from 1.6 times to 4.0 times better than existing methods(Huffman and LZW compression).

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.6
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• pp.48-56
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• 2012

Radiation characteristics of inductive loaded patch antennas (ILPAs) and conventional patch antennas using a half wavelength resonance mode for substrates with various dielectric constants are investigated. ILPAs have the good radiation characteristics such as high broadside gain and suppressed radiation along the horizontal plane compared to those of conventional patch antennas. We show that ILPAs with the appropriate patch length and via radius have the optimum radiation characteristics such as the highest broadside gain and the most suppressed horizontal radiation.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.35-42
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• 2012

An inductive loaded microstrip patch antenna using aperture coupled feeding is designed and an impedance bandwidth enhancement method using a shunt stub is investigated. The -10 dB impedance bandwidth of the AIMPA with a shunt stub is increased up to about 5.51 %. The impedance bandwidth of the corresponding AIMPA without a shunt stub is 2.4 %. The increase of the impedance bandwidth of the AIMPA with a shunt stub is about 129.6 % compared to that of the corresponding AIMPA without a shunt stub.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.11
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• pp.33-41
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• 2007

Effect of finite substrate plane on the radiation characteristics of microstrip patch antennas is investigated. The variation of the characteristics of the radiation pattern due to the change of the length of a substrate is much larger than that due to the change of the width of a substrate. As the thickness of a substrate increases, the characteristics of the radiation pattern reveal more sensitive for the change of the size of a substrate.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.64-70
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• 1999

We show that both cross and bar states with very high extinction ratios larger than 30 dB can be obtained in ultra short (< $100{\mu}m$) two-section vertical directional couplers. Based on the calculations of various possible combinations of the refractive indices of waveguides in each section using the improved coupled mode theory and beam propagation method, the guidelines for the design of ultra short two-section vertical directional couplers are presented to obtain both cross and bar states with high extinction ratios larger than 30 dB at the ends of section 1 and section 2, respectively.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• Progress in Superconductivity
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• v.9 no.1
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• pp.91-95
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• 2007

[ $YBa_2Cu_3O_{7-{\delta}}$ ] films have been prepared on $LaAlO_3$ (100) single-crystal substrates by the metal organic deposition using dichloroacetate precursors (DCA-MOD). DCA precursor solutions with different composition such as; Yttrium-excess(15 at%), barium-poor(25 at%), and a stoichiometric(Y:Ba:Cu=1:2:3) were prepared in order to investigate the effects of precursor composition on the properties of YBCO films prepared by DCA-MOD method. Coated films were calcined at low temperature up to $500^{\circ}C$ in flowing humid oxygen atmosphere. Conversion heat treatment was performed $800^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. For the film prepared using excess yttrium composition, high critical current density ($J_c$) of $>2MA/cm^2$ was obtained whereas, for the films prepared using barium-poor composition, $J_c$ was lower than $1MA/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.101-102
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C$ and $440^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4} eV/K)T^2/(T+332 K)$. After the as-grown $AgGaS_2$ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.129-132
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• 1999

A new single solution source MOCVD technique for the deposition of YBCO film has been developed, using a ultrasonic atomizer to feed the precursors into an evaporation zone. This method being investigated as a basis for future long wire fabrication, for example the electric power use, the magnatic applications, etc.. YBCO films were prepared on MgO(100) substrate, using mixture of Y, Ba, and Cu ${\beta}$ -diketonate chelate was dissolve in tetrahydrofuran as a solution sources. X-ray diffraction measurement indicated that the thin film grew epitaxially with the c-axis orientation perpandicular to the surface of the surface.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.1
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• pp.48-58
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• 2015

The bandwidth enhancement of an aperture coupled microstrip patch antenna(ACMPA) with a high permittivity feed substrate suitable for the integration with MMIC is investigated using variation of an aperture width. As an aperture width increases, the 10 dB return loss bandwidth increases due to the increase of the mutual resonance region between a patch resonance and an aperture resonance. The bandwidth of an ACMPA with extended aperture width is increased up to 35.3 % from 20.8 % of the ACMPA with an aperture of a typical aspect ratio 10:1. The degradation of the radiation characteristics of an ACMPA due to the increase of an aperture width is very small.