• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.303.2-303.2
• /
• 2014

The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.366.1-366.1
• /
• 2014

The rare-earth oxides M2O3 (M=La, Pr, Gd) are good insulators due to their large band gap (3.9eV for Pr2O3, 5.6eV for Gd2O3), they have high dielectric constants (Gd2O3 K=16, La2O3 K=27, Pr2O3 K=26-30) and, compared to ZrO2 and HfO2, they have higher thermodynamic stability on silicon making them very attractive materials for high-K dielectric applications. Another attractive feature of some rare-earth oxides is their relatively close lattice match to that of silicon, offering the possibility of epitaxial growth and eliminating problems related to grain boundaries in polycrystalline films. Metal-organic chemical vapor deposition (MOCVD) has been preferred to PVD methods because of the possibility of large area deposition, good composition control and excellent conformal step coverage. Herein we report on the synthesis of rare-earth oxide complexes with designed alkoxide and aminoalkoxide ligand. These novel complexes have been characterized by means of FT-IR, elemental analysis, and thermogravimetric analysis (TGA).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.364.2-364.2
• /
• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• Progress in Superconductivity
• /
• v.12 no.1
• /
• pp.68-73
• /
• 2010

Y123 films have been deposited on $LaAlO_3$ (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around $710{\sim}750^{\circ}C$ and working pressures of 10~15 torr. Thick c-axis epitaxial film with the thickness of $0.3{\sim}0.6\;{\mu}m$ was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

• Progress in Superconductivity
• /
• v.3 no.1
• /
• pp.120-124
• /
• 2001

To establish the deposition condition of YBCO thin film on MgO single crystal substrates, processing parameters of deposition temperature, chemical composition and oxygen partial pressure were controlled. When using a Ba-deficient composition of YB $a_{1.8}$ $Cu_3$$O_{x}$, non-superconducting phase like CuO, $CuYO_2$ were formed, but BaCu02 was formed together with Yl23 phase when the starting composition was Ba-rich ($YBa_{2.3}$ $Cu_3$ $O_{x}$). The epitaxially grown Yl23 phase was formed at 760-$810^{\circ}C$ and $P_{O2}$=0.29-0.91 Torr.r.r.r.

• Progress in Superconductivity
• /
• v.7 no.2
• /
• pp.152-157
• /
• 2006

New precursor solution with dichloroacetic acid (DCA) was developed for fabricating high $J_c$ REBCO film. DCA based-precursor solution was coated on $LaAlO_3$(001) substrate by dip coating method. Processing parameters such as oxygen partial pressure, water vapor, ramping rate and pyrolysis temperature were controlled in order to obtain a good epitaxial film. The film with thickness of 0.5 micrometer was obtained by single coating and no crack was observed at calcined films. Oxygen partial pressure was controlled in the range of $100{\sim}1,000$ ppm and conversion heat treatment was carried out at the temperature range of $705-765^{\circ}C$. A critical transition temperature ($T_c$) of 90 K and a critical transport current density ($J_c$) of $>0.5\;MA/cm^2$ (77 K and self-field) were obtained for the GdBCO film. It is thought that fluorine-free MOD solution using DCA is promising precursor solution for fabricating high quality REBCO films.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.8
• /
• pp.718-729
• /
• 2015

A S / X dual broad band patch antenna with shared aperture structure is fabricated. A $2{\times}2$ perforated patch is used for S-band operation and a $2{\times}2$ patch antenna array is integrated in the $2{\times}2$ perforation for X-band operation. The measurement results of a S / X dual broad band patch antenna with shared aperture structure show the broad band characteristics larger than 20 % in both bands.

• ETRI Journal
• /
• v.24 no.2
• /
• pp.109-116
• /
• 2002

We propose a novel very short (< $300{\mu}m$) vertical directional coupler switch with high extinction ratios larger than 30 dB. The device consists of a switching operation induced section (SOIS), an extinction ratio adjusted section (ERAS), and an extinction ratio enhanced section (ERES). These are achieved by changing the refractive index of one core. The switching operation is induced by changing the refractive index of one core in the SOIS. The improvement of extinction ratios larger than 30 dB for both the cross and bar states is made by controlling the asymmetry of the refractive indices of both cores in the ERES. Through the ERAS, different extinction ratios between the cross and bar states at the end of the SOIS are changed to the same value. For this reason, the optimum asymmetry of the refractive indices of the cores for the maximum extinction ratios and the lengths of ERES are the same for cross and bar states. Design guidelines for high extinction ratios with large tolerances are presented.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.10
• /
• pp.42-50
• /
• 2000

We show that both cross and bar states with high extinction ratios larger than 30dB can be achieved at eh same ends of ultra-short fused vertical directional coupler switches with two sections by changing the refractive indices of cores and inner cladding layers less than 1%. Based on the calculation of extinction ratios of cross state and bar state for various refractive index and thickness of inner cladding layer and core using the improved coupled mode theory and beam propagation method, the guidelines for design to achieve large tolerances in refractive indices of core and inner cladding layer in fused vertical directional coupler switches are presented.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.46 no.10
• /
• pp.63-71
• /
• 2009

The patch antennas with an array of pins with excellent radiation characteristics are investigated for several substrate thicknesses. The patch length of a pin array patch antenna for the maximum suppression of radiation in the horizontal plane decreases as the substrate thickness increases. The radiation in the horizontal plane of a pin array patch antenna is very small compared to that of a conventional patch antenna. The increase of forward radiation and the decrease of backward radiation of a pin array patch are obtained compared to those of a conventional patch antenna. The half-power beamwidth of E-plane radiation pattern of a pin array patch antenna is narrow compared to that of a conventional patch antenna so that the directivity is improved.