• Microbiology and Biotechnology Letters
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• v.27 no.1
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• pp.1-7
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• 1999

A fungus, Penicillium sp. PS-113, isolated from soil showed the high phosphate-solubilizing activity in patato dextrose broth-rock phosphate to produce free phosphates to the culture broth with the concentrations of 585 ppm against rock phosphate. In this medium, the optimum temperature and initial pH to solubilize rock phosphate were 30$^{\circ}C$ and pH 7.5, respectively. In order to make the mass production of the conidia from this fungus, we cultured in on various solid-based media like barley, corn, wheat, rice, rice bran, and compost. As a result, the fungus highly produced conidia ranging from 2.1 to $5.1{\times}10_9$ conidia/g${\cdot}$media on these solid media except compost-based medium, which was 0 times less than others. Effects of inoculation of the phosphate solubilizing fungus as a biofertilizer were studied in perlite-based pot cropped with Zea mays Suwon 19. Inoculation of Penicillium sp. PS-113 increased in plant height (1.4 times), plant weight (5.2~8.1 times) and root length (1.1~1.2 times) at 60-day cultivation, compared to Hogland solution either without $NH_4H_2PO_4$ or displace $NH_4H_2PO_4$ to powdered rock phosphate, a phosphorus source for plant growth.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.405-410
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• 1996

The partial substitution of LiTaO3 with Al2O3 caused the variation of dielectric properties and a lower melting temperature yielding an easier growth of single crystal. The lattice constants and Raman band broadening were measured for the LiTaO3 solid solution in which the cations of Li+ and Ta5+ were partially substituted by Al3+ cation. The LiTaO3 type limit phases were obtained. ; Li1.15Al0.45Ta0.7O3 for cationic excess Li1.15Al0.45Ta0.7O3 for stoichiometry Li0.85Al0.05TaO3 for cationic deficit. The second phase was formed beyond the solubility limit. The limit phase (Li0.85Al0.05TaO3) in the region of cationic deficit showed the lowest Cuire temperature of 61$0^{\circ}C$ and melting point of 152$0^{\circ}C$ compared to the solid solutions in other regions (TMp=1$650^{\circ}C$, Tc=69$0^{\circ}C$ for LiTaO3)

• Mycobiology
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• v.45 no.3
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• pp.172-177
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• 2017

The genus Paxillus is characterized by the difficulty of species identification, which results in reproducibility problems, as well as the need for large quantities of fungal inoculum. In particular, studies of Paxillus ammoniavirescens have reported divergent results in the in vitro growth while little is known of its capacity to degrade organic matter. For all the above, and assuming that this variability could be due to an inappropriate culture media, the aim of this study was to analyse growth in different culture media (MMN, MS, and 1/2 MS) and in the case of MMN in presence/absence of two types of organic matter (fresh litter and senescence litter) to probe the saprophytic ability of P. ammoniavirescens. We also evaluated the effects of pH changes in the culture media. Growth kinetics was assessed by weekly quantification of the area of growth in solid culture media over 5 wk, calculating the growth curves and inflection points of each culture media. In addition, final biomass after 5 wk in the different culture media was calculated. Results showed that best culture media are MS and 1/2 MS. Moreover, an improvement in growth in culture media containing decomposing fall litter was observed, leading to confirm differences in the culture media of this species with others of the same genus. Further, we established that all growth media suffered a significant acidification after fungal growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.462-462
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• 2013

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nanobelts, and nano-dots. In contrast to typical vaporliquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nanostructures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 chestnut burr were synthesized by using radio-frequency magnetron sputtering method. In contrast to typical sputtering method with sintered ceramic target, a Ga2O3 powder (99.99% purity) was used as a sputtering target. Several samples were prepared with varying the growth parameters, especially he growth time and the growth temperature to investigate the growth mechanism. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of Ga2O3 nano chestnut burr will be reported.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.238-246
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• 1996

High-density SiC-AIN solid solutions were fabricated from powder mixtures of $\beta$-SiC and AIN by hot-pressing in the 1870 to $2030^{\circ}C$ temperature range. The reaction of AIN and $\beta$-SiC (3C) powder transformed to the 2 H (wurzite) structure appeared to depend on the temperature and SiC/A1N ratio and seeds present. The crystalline phases consisted of a SiC-rich solid-solution phase and an A1N-rich solid-solution phase. At $2030^{\circ}C$ for 1 h, for a composition of 50 % AIN/50 % SiC with a seeding of $\alpha$-SiC, the complete solid solution could be obtained and the microstructures are equiaxed with a relatively homogeneous grain size of 2 H phases. The variation of the seeding of $\alpha$-SiC in SIC-A1N solid solutions could be attributed to the transformation behaviour and differences in size and shape of the grains, as well as to other factors, such as grain size distributions, compositional inhomogeneity, and structural defects.

• Korean Chemical Engineering Research
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• v.51 no.5
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• pp.587-590
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• 2013

Solid-liquid equilibria for mixtures composed of n-vinyl-2-pyrrolidone (NVP) and 2-pyrrolidone were measured as a basic study for the melt crystallization process to remove 2-pyrrolidone as impurity included in NVP. A differential scanning calorimeter (DSC) and a crystallizer were used and the experimental results obtained from two methods were similar. The mixture showed a eutectic system which has a single composition at the minimum melting temperature. Calculation results from simple thermodynamic equations were found in general agreements with present data. To determine the growth rate of NVP crystal which is important for the design of crystallization process, thicknesses of the crystal were measured with the time using a layer melt crystallizer. The growth rates increased as cooling temperatures decreased. Heat transfer coefficient correlated from present data was found to successfully describe the crystal growth behavior.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.588-595
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• 2009

The knowledge of grain growth of carbide particles is very important for manufacturing micrograined cemented carbides. In the present study, continuous and discontinuous grain growth in WC-Co and WC-VC-Co cemented carbides is investigated using the Monte Carlo computer simulation technique. The Ostwald ripening process (solution/re-precipitation) and the grain boundary migration process are assumed in the simulation as the grain growth mechanism. The effects of liquid phase fraction, grain boundary energy and implanted coarse grain are examined. At higher liquid phase content, mass transfer via solid/liquid interfaces plays a major role in grain growth. Growth rate of the implanted grain was higher than that of the matrix grains through solution/re-precipitation and coalescence with neighboring grains. The results of these simulations qualitatively agree with experimental ones and suggest that distribution of liquid phase and carbide particle/carbide grain boundary energy as well as contamination by coarse grain are important factors controlling discontinuous grain growth in WC-Co and WC-VC-Co cemented carbides. The contamination by coarse grains must by avoided in the manufacturing process of fine grain cemented carbides, especially with low Co.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.125.2-125.2
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• 2016

Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

• The Korean Journal of Mycology
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• v.23 no.2 s.73
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• pp.105-113
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• 1995

The mycelia of Lepista nuda were isolated from the different basidiocarps, collected from the forests of Robinia pseudo-acaciae and mixed forests of R. pseudo-acaciae and Quercus serrata. On the different woods, the growths of mycelia collected were compared with those transferred from Applied Mycology Division, RDA. Also, the measurements of dry weight loss, as growth of mycelia, were correlated to the productions of carbon dioxide on the different wood substrates. The growth of mycelia was observed to be best on the woods of R. pseudo-acaciae; followed by the growth on the woods of Morus alba. The growth rate of mycelia appeared to be various, depending on the different kinds of wood substrates. The soild-cultures of the mycelia on the sawdust of the R. pseudo-acaciae woods and the grains of sorghum and corn were conducted, but the basidiocarps were not obtained from these. Therefore, this mycelium collected was believed to be important as new mushroom utilizing the different woods resources instead of Q. serrata.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.424-431
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• 1999

The reproducibility of successive growth of $Bi_{12}TiO_{20}$ (BTO) single crystlas using a top-seeded solution growth (TSSG) pulling method was evalutated by measuring the lattice constants and their standard deviations. A substantial phase diagram in the region close to the stoichiometric BTO was established expermentally for this purpose, and the existence of a retrograde solid solution close to a BTO was clarified. It was emphasized that a starting solution, with a 10.0~10.1 mol% $TiO_{2}$ concentration, results in large single crystals with a highly homogeneous lattice constant of within ${\pm}1{\times}10^{-4}\AA$, when the solidified fraction of the grown crystal is less than about 45 %. A wavelength dispersion of refractive index was measrued for the first time, and it was verified that the refractive index of BTO is larger than that of BSO($Bi_{12}TiO_{20}$), allowing the voltage sensitivity of EOS higher than the case with BSO as a probe head.