• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.155-158
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• 1997

Highly oriented diamond films were deposited on a (100) silicon substrate by bias enhanced nucleation technique. Both plan-view and cross-section TEM were applied to study the nucleation and growth mechanism of diamond grains. Randomly oriented polycrystalline diamond grains with internal microtwins were observed at the nucleation stage while defect free regions were retained at the growth stage and were apparently related with the epitaxy of diamond films. From our experimental results, the nucleation and texture formation mechanism of diamond films is discussed.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.141-147
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• 2003

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.354-358
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• 1996

High indium incorporation was observed in InGaAs growth by precursor alternating metalorganic chemical vapor deposition (PAMOCVD). A possible mechanism of high indium incorporation into the crystal in PAMOCVD was proposed by considering the decomposition products of gallium and indium precursors, and thus the different adsorption behavior of the decomposed precursor molecules.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3571-3574
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• 2011

Nano-scaled metal oxides have been attractive materials for sensors, photocatalysis, and dye-sensitization for solar cells. We report the controlled synthesis and characterization of single crystalline $TiO_2$ nanowires via a catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanism during TiO powder evaporation. Scanning electron microscope (SEM) and transmission electron microscope (TEM) studies show that as grown $TiO_2$ materials are one-dimensional (1D) nano-structures with a single crystalline rutile phase. Also, energy-dispersive X-ray (EDX) spectroscopy indicates the presence of both Ti and O with a Ti/O atomic ratio of 1 to 2. Various morphologies of single crystalline $TiO_2$ nano-structures are realized by controlling the growth temperature and flow rate of carrier gas. Large amount of reactant evaporated at high temperature and high flow rate is crucial to the morphology change of $TiO_2$ nanowire.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1563-1566
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• 2009

One-dimensional aluminum nitride (AlN) nanostructures were synthesized by calcining an Al(OH)(succinate) complex, which contained a very small amount of iron as a catalyst, under a mixed gas flow of nitrogen and CO (1 vol%). The complex decomposed into a homogeneous mixture of alumina and carbon at the molecular level, resulting in the lowering of the formation temperature of the AlN nanostructures. The morphology of the nanostructures such as nanocone, nanoneedle, nanowire, and nanobamboo was controlled by varying the reaction conditions, including the reaction atmosphere, reaction temperature, duration time, and ramping rate. Iron droplets were observed on the tips of the AlN nanostructures, strongly supporting that the nanostructures grow through the vapor-liquid-solid mechanism. The variation in the morphology of the nanostructures was well explained in terms of the relationship between the diffusion rate of AlN vapor into the iron droplets and the growth rate of the nanostructures.

• Journal of Communications and Networks
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• v.8 no.3
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• pp.351-359
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• 2006

In this article, we present a new slow-start variant, which improves the throughput of transmission control protocol (TCP) Vegas. We call this new mechanism Gallop-Vegas because it quickly ramps up to the available bandwidth and reduces the burstiness during the slow-start phase. TCP is known to send bursts of packets during its slow-start phase due to the fast window increase and the ACK-clock based transmission. This phenomenon causes TCP Vegas to change from slow-start phase to congestion-avoidance phase too early in the large bandwidth-delay product (BDP) links. Therefore, in Gallop-Vegas, we increase the congestion window size with a rate between exponential growth and linear growth during slow-start phase. Our analysis, simulation results, and measurements on the Internet show that Gallop-Vegas significantly improves the performance of a connection, especially during the slow-start phase. Furthermore, it is implementation feasible because only sending part needs to be modified.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.551-557
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• 1995

For the observation of treeing, a visual measurement with an optical microscope has been used to explain breakdown mechanism in high-voltage systems. The conventional directed visual method of tree aging observation is difficult to measure in short time processing, and it is impossible to analyze on tree degradation area, progressed direction, tree pattern, etc. By using an image processing technique, the tree features which appear immediately after the tree initiation as well as changes in the configuration of the tree can be easily measured and observed than using the conventional visual methods. In this paper, we have developed a tree observating system by using image processing for tree growth, degradation area and other treeing progress. As an experimental result, it can be concluded that the image processing method is a more effective alternative than directed visual observation method. As a matter of fact, it is possible to record the image of tree propagation immediately after its first appearance and explain the characteristics of tree growth froth the computer processing image.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.408-412
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• 2002

Ga$_2$O$_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about 10~200nm width and 10~50nm thickness. The nanobelt, growing along the direction perpendicular to the (010) plane and enclosed by (101) and (101) facets, shows no defect and no dislocation.

• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.461-469
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• 1987

Single crystals of Mn-Zn Ferrite were grown by slow cooling method using Na2B4O7 as flux agent. The effects of flux content and cooling rate on the types of crystals, and the relation between supersaturation and growth mechanism were studied. As a result, the types of grown crystals occurred as plate, hopper and octahedral crystals. The occurrence of these crystal types was dependent on flux content. The habit was found to correlate with the growth rate and supersaturation. The lateral growth of a dendritic crystal is related to the twin layer. The growth of crystals from borax melts mainly occurred by the layer-spreading growth following corner and edge nucleation caused by high supersaturation in the melt. Especially, the plate crystals were produced on top of the melts. The hopper and octahedral crystals occurred at lower supersaturation than the plate crystals.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.807-810
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• 2001

Fatigue crack growth tests were carried out using high manganese cast steel under constant amplitude loading. Crystal grain size of the material is about 1000$\mu\textrm{m}$. For this material, the fatigue crack growth mechanism of high manganese steel was clarified from results such as observation of crack growth path and fracture surface. $\Delta$$K_{th}$ is about 8MPa$\surd$m which is quiet large as compared to the general structural steels and the crack growth rate is lower than the general structural steels especilly in the low $\Delta$K regsion. The reason of this behavior is crack closure due to fracture surface roughness.