• 한국수소및신에너지학회논문집
• /
• 제16권4호
• /
• pp.324-333
• /
• 2005

The kinetics of external hydrogen embrittlememt is considered. The equation of the crack growth rate (CGR) is derived from modification of the model developed by Wilkinson and Vitek. After calculation of hydrogen pressure build-up in the void, the effect of the internal hydrogen pressure on the void growth is added. The CGR is expressed by two terms. One is the term dependent on the critical stress, which is exactly same as Wilkinson and Vitek. The other is term dependent on the pressure of the hydrogen in void.

• 한국표면공학회지
• /
• 제34권1호
• /
• pp.17-24
• /
• 2001

A model for quantifying the effect of steam pressure on the oxide thickness growth was developed based on the experimental data available. First, empirical equations for the thickness estimation of oxide formed in 1 atm steam were made. The oxide growth kinetics turned out to be dependent on 0.4th power of oxidation time. With an assumption that the transition oxide thickness be only a function of temperature, a model for the enhancement of steam pressure on oxide growth was developed. The enhancement coefficient for steam pressure is calculated to be 0.01~0.013 $bar^{-}$. The developed model generally well explains the experimental data.a.

• Environmental Engineering Research
• /
• 제20권4호
• /
• pp.347-355
• /
• 2015

The growth kinetics of phototrophic microorganisms can be controlled by the light irradiance, the concentration of an inorganic nutrient, or both. A multi-component kinetic model is proposed and tested in novel batch experiments that allow the kinetic parameters for each factor to be estimated independently. For the cyanobacterium Synechocystis sp. PCC6803, the estimated parameters are maximum specific growth rate $({\mu}_{max})=2.8/d$, half-maximum-rate light irradiance $(K_L)=11W/m^2$, half-inhibition-rate light irradiance $(K_{L,I})=39W/m^2$, and half-maximum-rate concentration for inorganic carbon $(K_{S,Ci})=0.5mgC/L$, half-maximum-rate concentration for inorganic nitrogen $(K_{S,Ni})=1.4mgN/L$, and half-maximum-rate concentration for inorganic phosphorus $(K_{S,Pi})=0.06mgP/L$. Compared to other phototrophs having ${\mu}max$ estimates, PCC6803 is a fast-growing r-strategist relying on reaction rate. Its half-maximum-rate and half-inhibition rate values identify the ranges of light irradiance and nutrient concentrations that PCC6803 needs to achieve a high specific growth rate to be a sustainable bioenergy source. To gain the advantages of its high maximum specific growth rate, PCC6803 needs to have moderate light illumination ($7-62W/m^2$ for ${\mu}_{syn}{\geq}1/d$) and relatively high nutrient concentrations: $N_i{\geq}2.3 mgN/L$, $P_i{\geq}0.1mgP/L$, and $C_i{\geq}1.0mgC/L$.

• 한국재료학회지
• /
• 제18권1호
• /
• pp.45-50
• /
• 2008

Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
• /
• pp.43-44
• /
• 2001

• Journal of Welding and Joining
• /
• 제20권3호
• /
• pp.16-23
• /
• 2002

• Bulletin of the Korean Chemical Society
• /
• 제33권8호
• /
• pp.2483-2488
• /
• 2012

The X-ray line broadening technique was used to calculate the grain size of MgO at 1023, 1123, 1223 K respectively either in $CO_2$ or during the thermal decomposition of magnesites in air as well as in vacuum. By referring to the conventional grain growth equation, $D^n=kt$, the activation energy and pre-exponential factor for the process in air are gained as 125.8 kJ/mol and $1.56{\times}10^8\;nm^4/s$, respectively. Ranman spectroscopy was employed to study the surface structure of MgO obtained during calcination of magnesite, by which the mechanism of grain growth was analyzed and discussed. It is suggested that a kind of highly reactive MgO is produced during the thermal decomposition of magnesites, which is exactly the reason why the activation energy of the grain growth during the thermal decomposition of magnesite is lower than that of bulk diffusion or surface diffusion.

• Environmental Engineering Research
• /
• 제10권6호
• /
• pp.283-293
• /
• 2005

Characteristics of sulfur-based autotrophic denitrification in a semi-continuous type reactor and the kinetic parameters were studied. Enriched autotrophic denitrifying culture was used for the reactor operation. Biomass growth on sulfur particles and in the liquid medium was monitored using the DAPI staining method. From the result of ion concentration changes and the biomass growth, maximum specific growth rate, ${\mu}_{max}$, and the half velocity constant, $K_M$, were estimated as $0.61\;d^{-1}$ and 3.66 mg/L, respectively. Growth yield coefficient, Y values for electron acceptor and donor were found as 0.49 gVSS/g N and 0.16 gVSS/g S. The biomass showed specific denitrification rate, ranging 0.86-1.13 gN/g VSS-d. A half-order equation was found to best simulate the denitrification process in the packed bed reactor operated in the semi-continuous mode.

• Journal of Welding and Joining
• /
• 제20권1호
• /
• pp.97-102
• /
• 2002

The growth kinetics of intermetallic compound layers formed between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad by solid stateisothermal aging were examined. The interfacial reaction between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad was investigated at 70, 120, 150, $170^{\circ}C$ for various times. The intermetallic compound layer was composed of two phase: $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the solder and $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the copper and on solder/Ni pad the intermetallic compound layer was $Ni_3Sn_4$. Because the values of time exponent(n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energy for layer growth of total Cu-Sn($Cu_6Sn_5 + Cu_6Sn$), $Cu_6Sn_5$, $Cu_3Sn$ and $Ni_3Sn_4$ intermetallic compound were 64.82kJ/mol, 48.53kJ/mol, 89.06kJ/mol and 71.08kJ/mol, respectively.

• 마이크로전자및패키징학회지
• /
• 제14권4호
• /
• pp.15-20
• /
• 2007

시효처리에 따른 Cu pillar 범프 내 다양한 계면에서의 금속간화합물 성장거동을 각각 120, 150, $165^{\circ}C$의 온도에서 300시간동안 시효처리하면서 연구하였다. 분석 결과 Cu pillar와 SnPb 계면에서는 $Cu_6Sn_5$와 $Cu_3Sn$이 관찰되었고, 시효처리 시간이 경과함에 따라 parabolic 형태로 성장하였다. 또한 시효처리 온도가 높을수록 시간에 따른 $Cu_6Sn_5$와 $Cu_3Sn$의 성장속도는 더욱 빨랐다. kirkendall void는 Cu Pillar와 $Cu_3Sn$ 사이의 계면과 $Cu_3Sn$ 내부에서 형성되었고, 시효처리 시간이 경과함에 따라 성장하였다. 리플로우 후에 SnPb와 Ni(P)사이의 계면에서는 $(Cu,Ni)_6Sn_5$가 형성되었고, 시효처리 시간에 따른 $(Cu,Ni)_6Sn_5$거 두께 변화는 관찰되지 않았다. 시효처리 온도와 시간에 따른 금속간화합물의 두께 변화를 이용하여 전체$(Cu_6Sn_5+Cu_3Sn)$금속간화합물과 $Cu_6Sn_5,\;Cu_3Sn$ 금속간화합물의 성장에 대한 활성화 에너지를 구해본 결과 각각 1.53, 1.84, 0.81 eV의 값을 가지고 있었다.