• Journal of the Korean Ceramic Society
• /
• v.42 no.3 s.274
• /
• pp.145-149
• /
• 2005

[ $Eu^{2+}$ ]-activated barium magnesium silicate phosphor, $(Ba,Ca)_{3}MgSi_{2}O_{8}:Eu_{x}$, has been known to emit blue-green light. In this study we report the manufacturing processes for producing either pure green or pure blue light-emitting phosphor from the same composition of $Ba_{2-x}Ca_{2}CaMgSi_{2}O_{8}:Eu_{x}$ (0 < x < 1) by controlling heat treatment conditions. Green light emitting phosphor of $Ba_{1.9}CaMgSi_{2}O_{8}:Eu_{0.1}$ can be produced under the sample preparation condition of highly reducing atmosphere of $23\%\;H_2/77\%\;N_2$, while blue or blue-green light emitting phosphor under reducing atmosphere of $5\~20\%\;H_2\;/\;95\~80\%$ N_2. The green light-emitting phosphors are prepared in two steps: firing at $800\~1000^{\circ}C$ for $2\~5$ h in air then at $1100\~1350^{\circ}C$ for 2-5 h under reducing atmo­sphere $23\%$ $H_2/77\%\;N_2$. The excitation spectrum of the green light-emitting phosphor shows a broadband of $300\~410$ nm. The emission spectrum has a maximum intensity at the wavelength of about 501 nm. The CIE value of green light emission is (0.162, 0.528). The pure blue light-emitting phosphors can be produced using the $Ba{2_x}CaMgSi_{2}O_{8}:Eu_{x}$ by introducing additional firing step at $1150\~1300^{\circ}C$ in air before the final reducing treatment. The XRD analysis shows that the green light-emitting phosphor mainly consisted of $Ba_{1.31}Ca_{0.69}SiO_{4}$ (JCPDS $\#$ 36-1449) and other minor phases i.e., $MgSiO_3$ (JCPDS $\#$ 22-0714) and $Ca_{2}BaMgSi_{2}O_{8}$ (JCPDS $\#$ 31-0128). The blue light-emitting phosphor mainly consisted of $Ca_{2}BaMgSi_{2}O_{8}$ phase.

• Journal of Biomedical Engineering Research
• /
• v.35 no.5
• /
• pp.125-131
• /
• 2014

The purpose of this study is to verify the utility of reflected photoplethysmography sensor using two green light emitting diodes that influenced by ambient light. Recently it has been studied that green light emitting diode is suitable for light source of reflected photoplethysmography sensor at low temperature and high temperature. Another study showed that, green light is better for monitoring heart rate during motion than led light. However, it has a bad characteristic about ambient light noise. To verify the utility of reflected photoplethysmography sensor using green light emitting diode, this study measures the photoplethysmography signal that is distorted by ambient light and will propose a solution. This study has two parts of research method. One is measurement system that composed sensor and board. The sensor is made up PE-foam and Non-woven fabric for flexible sensor. The photoplethysmography signal is measured by measurement board that composed high-pass filter, low-pass filter and amplifier. Ambient light source is light bulb and white light emitting diode that has three steps brightness. Photoplethysmography signal is measured with lead II electrocardiography signal at the same time and it is measured at the finger and radial artery for 1 minute, 1000 Hz sampling rate. The lead II electrocardiography signal is a standard signal for heart rate and photoplethysmography signal that measured at the finger is a standard signal for waveform. The test is repeated 3 times using three sensor. The data is processed by MATLAB to verify the utility by comparing the correlation coefficient score and heart rate. The photoplethysmography sensor using two green light emitting diodes is shown better utility than using one green light emitting diode and red light emitting diode at the ambient light. The waveform and heart rate that measured by two green light emitting diodes are more identical than others. The amount of electricity used is less than red light emitting diode and error peak detectability factor is the lowest.

• Applied Chemistry for Engineering
• /
• v.25 no.3
• /
• pp.233-236
• /
• 2014

Organic light emitting diodes (OLEDs) received much attention from both academia and industry as the next-generation flat panel displays. However, to produce high quality OLEDs, there are still many challenges to overcome. Especially, in full color OLEDs, the intrinsic wide band gap of the blue emitting materials results in inferior efficiency compared to those of green and red emitting materials. Therefore, extensive research efforts have been devoted to develop efficient blue emitting materials. This review briefly summarizes the basics of OLEDs and introduces highlights of research efforts in blue-emitting materials.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.11
• /
• pp.3451-3453
• /
• 2010

• Bulletin of the Korean Chemical Society
• /
• v.34 no.1
• /
• pp.107-111
• /
• 2013

A new green-emitting material with donor-acceptor architecture, 3,7-bis(1'-phenylbenzimidazole-2'-yl)-10-phenylphenothiazine (BBPP) was synthesized and its thermal, optical, and electroluminescent characteristics were investigated. Organic light-emitting diodes (OLEDs) with four different multilayer structures were prepared using BBPP as an emitting layer. The optimized device with the structure of [ITO/2-TNATA (40 nm)/BBPP (30 nm)/TPBi (30 nm)/Alq3 (10 nm)/LiF (1 nm)/Al (100 nm)] exhibited efficient green emission. Enhanced charge carrier balance and electron mobility in the organic layers enabled the device to demonstrate a maximum luminance of 31,300 cd/$m^2$, a luminous efficiency of 6.83 cd/A, and an external quantum efficiency of 1.62% with the CIE 1931 chromaticity coordinates of (0.21, 0.53) at a current density of 100 mA/$cm^2$.

• Journal of Advanced Marine Engineering and Technology
• /
• v.29 no.7
• /
• pp.795-800
• /
• 2005

The optical properties of $ZnS_{y}Se_{1-x-y}:Te_x\;(x\;<\;0.08,\;y\∼0.11$) alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_{1}$Tel and $Te_{n}$ (n$\geq$2) cluster bound excitons, respectively. Bright blue (462 nm) and green (535 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer.

• Journal of Advanced Marine Engineering and Technology
• /
• v.27 no.1
• /
• pp.33-41
• /
• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• Proceedings of the Korean Society of Marine Engineers Conference
• /
• 2002.05a
• /
• pp.167-171
• /
• 2002

We have investigated the optical properties of Te-doped ZnSSe:Te epitaxial layers grown on (100) GaAs substrates by molecular beam epitaxy. The Te-doped ternary specimen shows strong blue or green emission (at 300k) which is assigned to Te$_{1}$ or Te$_{n}$( n$\geq$2) cluster bound exciton. Bright green and blue light-emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The green LEDs exhibit a fairly long device lifetime (>2000 h) when operated at 3 A/cm$^{2}$ under CW condition at room temperature. It is confirmed that the Te-doping induced "crystal-hardening effect" plays a significant role in both efficient and strong suppression of the optical device degradation.gradation.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.762-765
• /
• 2002

The bilayer organic light-emitting diode using Al (DBM) $_3$ (DBM=Dibenzoylmethane) as an emitting material and poly (N-vinylcarbazole) (PVK) as hole-transport material, emitted bright blue-green light instead of blue light. The blue-green emission is attributed to exciplex formation at the solid interface between Al (DBM) $_3$ and the hole-transport material. The exciplex formation was evidenced by the measurement of the photoluminescence spectra and lifetimes of Al (DBM) $_3$, PVK and an equimolar amount of mixture of Al (DBM) $_3$ and PVK.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.301-302
• /
• 2009

The Green emitting OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was 7,371 cd/$m^2$ at the RF power of 25W. O2 plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of green OLED.