• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.189-189
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• 2006

The self-assembly of supramolecular dendrimers allows the rapid construction of nanosized structures with regularly ordered features that depend on the shape of the molecules and the relative strength of the intra-and intermolecular interactions. Here we report on a dramatic improvement in the degree of control and selectivity in the orientation of fan-shaped supramolecular molecules over a large area, which has been achieved by confined geometries and applied fields. The order and orientation of supramolecular dendrimers can be controlled by surface anchoring in confined geometries. POM, SEM, TEM, AFM and XRD results show that the molecules form the complicated defect-ordering in the microchannels with different feature sizes. We show that these defect domains are strongly influenced by the boundary and feature size of the surfaces. This technique can be used to create a grain size in the plane of the film that is much larger than that which can be achieved using previously reported soft-material based pattering.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.199-205
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• 2005

Polycrystalline cadmium sulfide(CdS) thin films were deposited on glass substrate by chemical bath deposition(CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling.

• 소성∙가공
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• 제13권4호
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• pp.374-381
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• 2004

In this study, the deformation behavior of semi-solid Al-Si alloy was investigated by nanoindenter as a part of the research on the surface crack behavior in thixoformed automobile component. The microstructure of semi-solid Al-Si alloy consists of primary and eutectic regions. In eutectic regions the crack initiation begins with initial fracture of the eutectic silicon particles and inside other intermetallic phases. Nano-deformation characteristics in the eutectic and primary phase of semi-solid aluminium alloy were investigated through the nano-indentation experiments and the AFM observation. In addition, mechanical properties of each region were investigated and compared with each other.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.220-221
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• 2003

Equiatomic FePt and CoPt alloy thin films have received considerable attention as possible magnetic and magneto-optic recording because of their high magnetic anisotropy energy and high coercivity. The high coercivity in these thin films is due to the presence of finely dispersed ordered FePt phase mixed with disordered FePt phase. However, a high temperature treatment, either substrate heating during deposition or post annealing, is needed to obtain the ordered L1$\_$0/ phase with high value of magneto crystalline anisotropy. Recent microstructural studies on these films suggest that the average grain size ranges from 10-50 nm and the grains are magnetically coupled between each other. On the other hand, the ultrahigh-density magnetic recording media with low media noise imposes the need of a material, which consists of magnetically isolated grains with size below 10 nm. The magnetic grain isolation can be controlled by the amount of additional non-magnetic element in the system which determines the interparticle separation and therefore the interparticle interactions. Recently, much research work has been done on various non-magnetic matrices. Preliminary studies showed that the samples prepared in B$_2$O$_3$ and Carbon matrices have shown strong perpendicular anisotropy and fine grain size down to 4nm, which suggest these nanocomposite films are very promising and may lead to the realization of a magnetic medium capable of recording densities beyond 1 Tb/in$^2$. So, in this work, the effect of Carbon doping on the magnetic properties of FePt nanoparticles were investigated.

• 지질공학
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• 제15권2호
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• pp.185-199
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• 2005

토석류 산사태물질은 암석의 풍화 산물이므로 사태물질의 특성은 그 지역에 분포하는 기반암의 종류에 의존한다. 이 연구에서는 사태물질의 종류에 따른 이동특성에 대한 연구를 수행하기 위하여 암석의 풍화 특성과 지형 조건이 서로 다른 3개 지역에서 발생한 26개 산사태를 연구대상으로 하였다. 산사태 발생지점의 정밀야외 조사를 통하여 암석의 종류, 풍화 및 지형 특성 등을 분석하였고 사태물질의 입도분포와 체적에 따른 이동과 지형 특성과의 관계를 추적하였다 지형조건 중 사면의 경사변화는 사태물질 이동거리에 큰 영향을 미치는 것으로 판단되며, 이는 경사 변화가 많을 경우 사태물질의 확산속도와 에너지가 변화하기 때문에 일정한 경사를 따라 사태물질이 흘러내리는 것보다 더 큰 이동거리를 보이는 것으로 해석하였다. 사태물질의 이동거리는 사태물질의 체적과 입도에도 큰 영향을 받는 것으로 파악되었다. 특히 사태물질 체적은 지질특성에 확연히 구별되어 반려암 지역의 경우 화강암 지역에 비해 $4\~5$배 크다. 사태물질의 입도측면에서 중립질의 화강암 분포지역보다 대규모 핵석이 발달하고 풍화심도가 불규칙적인 반려암 지역에서 사태물질 규모 및 이동거리가 훨씬 크게 나타난다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.649-652
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• 2005

It is reported that semi-solid forming process takes many advantages over the conventional forming process, such as long die lift, good mechanical properties and energy saves. Rheology material has a thixotropic, pseudo-plastic and shear-thinning characteristic. Therefore, general plastic or fluid dynamic analysis is not suitable for the behavior of rheology material. So it is difficult for a numerical simulation of the rheology process to be performed because complicated processes such as the filling to include the state of the free surface and solidification in the phase transformation must be considered. Moreover, it is important to predict the deformation behavior for optimization of net shape forging process with semi-solid materials and to control liquid segregation for mechanical properties of materials. In this study, so, molecular dynamics simulation was performed for the control of liquid segregation in compression experiment as a part of study on analysis of rheology forming process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.286-287
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• 2006

Barium titanate ($BaTiO_3$) glycolate particles were synthesized at temperature as low as $100^{\circ}C$ through glycothermal reaction by using $Ba(OH)_2{\cdot}8H_2O$ and amorphous titanium hydrous gel as precursors and ethylene glycol as solvent. The particle size and morphology of $BaTiO_3$ glycolate powders can be controlled by varying the reaction conditions such as the reaction temperature and Ba:Ti molar ratio of starting precursors. After glycothermal treatment at $220^{\circ}C$ for 24 h in 1.25:1(Ba:Ti), the average particle size of the $BaTiO_3$ glycolate powder was about 200-400 nm and low agglomeration. $BaTiO_3$ powders were formed by heat-treating the glycolate powder in air at $500-1000^{\circ}C$. As a result, the size of $BaTiO_3$ crystallites changed from around 50-300 nm. It is also demonstrated that the size and shape of $BaTiO_3$ particles investigated as a function of calcination temperature. The $BaTiO_3$ particles obtained from optimum synthesis condition were pressed, sintered and measured for the dielectric property. The $BaTiO_3$ ceramics sintered at $1250^{\circ}C$ for 2 h had 98 % of theoretical density. The ceramics have an average grain size of about $1\;{\mu}m$ and displays the high dielectric constant (~3100) and low dielectric loss (<0.1) at room temperature.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.247-248
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• 2006

In this study, the morphology of the change of primary Al phase in A356 alloy by two kinds of electromagnetic stirrers(vertical and horizontal) were investigated to obtain the globular structure. The effects of the stirring current, the stirring time and the pouring temperature were determined. The greater stirring current and longer stirring time were to get the finer the Al phase. However, over a certain stirring current and stirring time, the primary Al was merged together and was increased. The reason is the degree of breakdown of initial dendrites has been decreased by the collision and coalescence of particles with increasing stirring current and stirring time. The optimum conditions and difference of the two kinds of electromagnetic stirrers have been investigated for rheology forming with controlled solid fraction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.