• Journal of the Korean Society for Heat Treatment
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• v.11 no.4
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• pp.324-332
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• 1998

The grain growth characteristics of dual-phase (${\alpha}+{\gamma}$) containing high Cr-steel have investigate using ${\alpha}$-, ${\gamma}$-single phases and (${\alpha}+{\gamma}$)dual-phase of 12%Cr Steel. The heat treatment has performed at $1000-1200^{\circ}C$ for 1-100hr. The results are as follows : 1) The grain growth rate in (${\alpha}+{\gamma}$) dual phase was substantially slower than that of single grain. 2) The relation between mean grain radius $\bar{{\gamma}}$ and annealing time t is, in general, described as following equation : $$(\bar{{\gamma}})^n-(\bar{{\gamma}_o})^n=K_n{\cdot}t{\cdots}{\cdots}(1)$$ i) In the case of single phase of high Cr steel, Eq.(1) is described as $(\bar{{\gamma}})^2-(\bar{{\gamma}_o})^2=K_2{\cdot}t$ and the grain growth is controlled by boundary migration. ii) In dual phase, the grain growth needs diffusion of alloying elements because the chemical composition of ${\alpha}$- and ${\gamma}$- phases differs from each other. When the volume fraction of ${\alpha}$-, ${\gamma}$-phase was almost equal and ${\gamma}$-phase in the case of 80 and $90%{\gamma}$. Eq.(1) is described as $(\bar{{\gamma}})^3-(\bar{{\gamma}_o})^3=K_3{\cdot}t$ because the grain growth is controlled by volume diffusion iii) In the case of ${\gamma}$-rich phase (80 and $90%{\gamma}$), the grain growth of minor phase (10 and $20%{\alpha}$) is described as $(\bar{{\gamma}})^4-(\bar{{\gamma}_o})^4=K_4{\cdot}t$ because the boundary diffusion is predominent rather than volume diffusion.

• Corrosion Science and Technology
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• v.11 no.4
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• pp.141-150
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• 2012

Stress corrosion cracks in Alloy 600 compact tension specimens tested at $325^{\circ}C$ in a simulated primary water environment of pressurized water reactor were analyzed by analytical transmission electron microscopy and secondary ion mass spectroscopy (SIMS). From a fine-probe chemical analysis, oxygen was found on the grain boundary just ahead of the crack tip, and chromium oxides were precipitated on the crack tip and the grain boundary attacked by the oxygen diffusion, leaving a Cr/Fe depletion (or Ni enrichment) zone. The oxide layer inside the crack was revealed to consist of a double (inner and outer) layer. Chromium oxides existed in the inner layer, with NiO and (Ni,Cr) spinels in the outer layer. From the nano-SIMS analysis, oxygen was detected at the locations of intergranular chromium carbides ahead of the crack tip, which means that oxygen diffused into the grain boundary and oxidized the surfaces of the chromium carbides. The intergranular chromium carbide blunted the crack tip, thereby suppressing the crack propagation.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1034-1040
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.

• Journal of the Korean Chemical Society
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• v.21 no.5
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• pp.339-352
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• 1977

The authors' theory developed in the preceding Paper 1 was applied to plastic deformation of ceramics, metals, alloys and single crystals. For polycrystalline substances, the flow mechanisms due to dislocation movement and grain boundary movement appear together or separately according to the experimental conditions whereas for single crystals, only the mechanism of dislocation movement appears. The parameters appearing in the flow equations $({\alpha}_{d1},\;1/{\beta}_{d1})and\;({\alpha}_{gj}/X_{gj},\;1/{\beta}_{gj})$ (j = 1 or 2), and the activation enthalpies ${\Delta}H_{k1}^{\neq}$ (k = d or g) were determined and tabulated. Here, the subscript d1 indicates the first kind of dislocation flow units and gj expresses the jth kind of grain boundary flow units. The predictions of the theory were compared with experiment with good agreement. Concerning the activation enthalpies, it was found that ${\Delta}H_{d1}^{\neq}$ 〉{\Delta}H_{g1}^{\neq}$ and that the former agrees with the activation enthalpy for bulk self-diffusion whereas the latter agrees with the activation enthalpy for grain boundary self-diffusion. These facts support the adequacy of the authors' theory which is considered as a generalized theory of plastic deformation.

• Journal of Welding and Joining
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• v.19 no.3
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• pp.325-333
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• 2001

The effect of base metal grain size on isothermal solidification behavior of Ni-base superalloy, CMSX-2 during transient liquid phase (TLP) bonding was investigated employing MBF-80 insert metal. TLP-bonding of single crystal. coarse-grained and fine-grained CMSX-2 was carried out at 1373∼1548k for various holding time in vacuum. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process for single crystal, coarse-grained and fine-grained base metals. The completion time for isothermal solidification decreased in the order ; single crystal, coarse-grained and fine-grained base metals. The difference of isothermal solidification rates produced when bonding the different base metals could be explained quantitatively by the effect of base metal grain boundaries on the apparent average diffusion coefficient of boron in CMSX-2.

• Journal of the Korean Society for Heat Treatment
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• v.16 no.4
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• pp.197-204
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• 2003

Honeycomb structure has been fabricated by brazing method using 0.1 wt%C and 1.0wt%C carbon steel core and STS304 stainless steel face sheet. Core shear strength ratio in W and L directions was 1:1.03 in 7 mm cell size, whereas 1:1.45 in 4 mm cell size. Flexural strength on face sheet was 166.4 MPa (0.1 wt%C, W direction), 171.1 MPa (0.1 wt%C, L direction), and 120.2 MPa (1.0 wt%C, W direction) in 7 mm cell size. And in 4mm cell size specimen, it was 169.2 MPa (0.1 wt%C, W direction), 224.2 MPa (0.1 wt%C, L direction). This means that flexural strength of 0.1 wt%C core material was higher than that of 1.0wt%C core material, which was contrary to expectation. SEM and EDS analysis represented that grain boundary diffusion had occurred in0.1 wt%C core, but no grain boundary diffusion in 1.0 wt%C core. And corrugated surface of 0.1 wt%C core was flat, whereas that of 1.0 wt%C core was not flat. As a result, contact area between two 1.0 wt%C cores was much less than that of 0.1 wt% cores, It is thought to be main reason for lower flexural strength of 1.0 wt%C core.

• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1252-1260
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• 1999

The defect chemistry and electrical characteristics of the grain boundaries of semiconducting SrTiO3 ceramics synthesized with wet-chemically surface-coated powders were investigated. The starting powders were separated into groups of 1-10${\mu}{\textrm}{m}$ 10-20${\mu}{\textrm}{m}$ etc by sedimentation and sieving methods. Na+ ions were absorbed on the powder surfaces by wet chemical-treatment method. The width of the grain boundary ranged up to several nm and the intergranular materials was amorphous. The additives coated on the surface of the powders were observed to be present at the grain boundaries of the ceramics. The diffusion depth of the additives into grains was about 30nm for the SrTiO3 ceramics synthesized with 5w/o coated materials, The threshold voltage grain boundary resistance and boundary potential barrier of the ceramics increased from 0.67V/cm 2.27k$\Omega$ and 0.05eV to 80.9V/cm 13.0k$\Omega$ 1.44eV with increasing the amount of the additives from 0 to 5 w/o respectively .

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.23-30
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• 1997

Semiconductive SrTiO3 ceramic bodies were prepared by conventional ceramic powder processes in-cluding sintering in a reducing atmosphere. Sodium or potassium ions were diffused from the surface of the sintered bodies into the inner region using thermal diffusion process at 800-120$0^{\circ}C$. The effects of such ther-mal treatments on the electrical and chemical characteristics of the grain boundaries were investigated. The presence of sodium or potassium ions at grain boundaries produces non-linear current-voltage behaviors, electrical boundary potential barriers of 0.1-0.2eV, and threshold voltages of 10-70V. The diffused ions form diffusion layers with thicknesses of 20-50nm near the grain boundaries, reducing the concentration of strontium and oxygen.

• Interaction and multiscale mechanics
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• v.1 no.3
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• pp.369-379
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• 2008

A combined stochastic diffusion and mean-field model is developed for a systematic study of the grain growth in a pure single-phase polycrystalline material. A corresponding Fokker-Planck continuity equation is formulated, and the interplay/competition of stochastic and curvature-driven mechanisms is investigated. Finite difference results show that the stochastic diffusion coefficient has a strong effect on the growth of small grains in the early stage in both two-dimensional columnar and three-dimensional grain systems, and the corresponding growth exponents are ~0.33 and ~0.25, respectively. With the increase in grain size, the deterministic curvature-driven mechanism becomes dominant and the growth exponent is close to 0.5. The transition ranges between these two mechanisms are about 2-26 and 2-15 nm with boundary energy of 0.01-1 J $m^{-2}$ in two- and three-dimensional systems, respectively. The grain size distribution of a three-dimensional system changes dramatically with increasing time, while it changes a little in a two-dimensional system. The grain size distribution from the combined model is consistent with experimental data available.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.4
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• pp.1177-1185
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• 1996

The crack growth under creep condition is one of the major damage mechanisms which determines remaining life of the component operating at high temperatures. In this paper, the creep crack growth by grain boundary cavitation is studied, which is frequently observed failure mechanism for creep brittle materials. As a result of diffusive growth of creep cavities, it is shown that the crack-tip stress field is modified from the original stress distribution by the amount of singularity attenuation parameter which is function of crack growth rate and material properties. Also, the stress relaxation at crack-tip results in the extension of cavitating area by the load dump effect to meet the macroscopic force equilibrium conditdion.