• 제목/요약/키워드: Grain boundary conductivity

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초음파 분무 열분해법을 이용한 고체전해질용 Lithium Lanthanum Titanium Oxide 제조 (The Synthesis of Lithium Lanthanum Titanium Oxide for Solid Electrolyte via Ultrasonic Spray Pyrolysis)

  • 노재석;양민호;이근재
    • 한국분말재료학회지
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    • 제29권6호
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    • pp.485-491
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    • 2022
  • Lithium lanthanum titanium oxide (LLTO) is a promising ceramic electrolyte because of its high ionic conductivity at room temperature, low electrical conductivity, and outstanding physical properties. Several routes for the synthesis of bulk LLTO are known, in particular, solid-state synthesis and sol-gel method. However, the extremely low ionic conductivity of LLTO at grain boundaries is one of the major problems for practical applications. To diminish the grain boundary effect, the structure of LLTO is tuned to nanoscale morphology with structures of different dimensionalities (0D spheres, and 1D tubes and wires); this strategy has great potential to enhance the ion conduction by intensifying Li diffusion and minimizing the grain boundary resistance. Therefore, in this work, 0D spherical LLTO is synthesized using ultrasonic spray pyrolysis (USP). The USP method primarily yields spherical particles from the droplets generated by ultrasonic waves passed through several heating zones. LLTO is synthesized using USP, and the effects of each precursor and their mechanisms as well as synthesis parameters are analyzed and discussed to optimize the synthesis. The phase structure of the obtained materials is analyzed using X-ray diffraction, and their morphology and particle size are analyzed using field-emission scanning electron microscopy.

고상확산법에 의해 제조된 AZO 투명전도막의 전기-광학특성 (Electrical and optical characteristics AZO transparent conductivity thin films by solid state diffusion method)

  • 임광수;표진구;소순진;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.785-787
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    • 2002
  • Conductivity and transmittancy of ZnO is very excellent and the price is low. So the study of transparent electrode materials and electromagnetic wave shielding wall is actively in progress. We add $Al_2O_3$(0.0, 2.0, 3.0, 5.0wt%) to ZnO and observe microscopic structure and conductivity. For XRD observation, Al peak of AZO is increased by increasing the amount of $Al_2O_3$. We observe that the size of grain is reduced by increasing the liquid phase of grain boundary to SEM observation. Conductivity of AZO is increased by increasing the amount of $Al_2O_3$. We confirm the application possibility of the materials for electromagnetic wave reflection materials.

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Electrical Behavior of Aluminum Nitride Ceramics Sintered with Yttrium Oxide and Titanium Oxide

  • Lee, Jin-Wook;Lee, Won-Jin;Lee, Sung-Min
    • 한국세라믹학회지
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    • 제53권6호
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    • pp.635-640
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    • 2016
  • Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

ZrO2(Y2O3)계 세라믹스의 소결성과 전기전도도에 대한 M2O3의 영향(III) : ZrO2-Y2O3-Ln2O3계 세라믹스 (Effect of M2O3 on the Sinterbility and Electrical Conductivity of ZrO2(Y2O3) System(III) : Ceramics of the ZrO2-Y2O3-Ln2O3 System)

  • 오영제;정형진;이희수
    • 한국세라믹학회지
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    • 제24권2호
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    • pp.123-132
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    • 1987
  • Yttria-stabilized zirconia with erbia-lanthana were investigated with respect to the amount of Ln2O3 (Ln; Er, La) addition in the range of 0.5∼5 mol% to the base composition of 8 mol% yttriazirconia. Following analysis and measurement were adopted for the characterization of synthesizes of solid electrolyte; phase transformation, lattice parameter, crystallite size, relative density, chemical composition and SEM/EDS. Electrical conductivity by two-probe method versus temperature from 350$^{\circ}C$ to 800$^{\circ}C$ and frequency in the range of 5Hz∼13MHz by complex impedance method was also conducted together with the determination of oxygen ion transference number by EMF method for the evaluation of their electrical properties. The results were as followsing; Electrical conductivity were decreased with increase in Ln2O3 content, but their activation energies increased. In the case of La2O3 addition, espicially, its electrical conductivity was decreased owing to the segregation of second phases at the grain-boundary. Grain-boundary conductivity of the specimen contained 0.5 mol% Er2O3 exhibited a maximum conductivity among thecompositions experimented. However, their bulk conductivities decreased in both case. Oxygen ion transference number was also reduced with decrease in oxygen partial pressure. For example, in the case of Er2O3 addition it retained value in the range of 0.97∼0.94 abvove 4.74${\times}$10-2in oxygen partial pressure. With the increase in the quantities of the evaporation of additive components, the crystallite size of stabilized zirconia decreased, and their relative density also reduced owing to the formation of porosity in their matrices. In the case of La2O3 the sinterbility was improved in the limited amount of addition up to 0.5 mol%, in the same range of addition the strength of sintered bodies were improved perhaps owing to the precipitation of metastable tetragonal phase in the fully stabilized zirconia.

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$Y_2O_3$ 첨가와 소결 시간이 AlN 세라믹스의 일축 가압 소결 거동 및 열전도도에 미치는 영향 (Effects of $Y_2O_3$ addition and sintering time on denazification and thermal conductivity of AlN ceramics during hot-press sintering)

  • 채재홍;박주석;안종필;김경훈;이병하
    • 한국결정성장학회지
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    • 제18권6호
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    • pp.237-241
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    • 2008
  • AlN 소결체를 제조함에 있어서 $Y_2O_3$를 소결 첨가제로 하여 일축 가압 소결법을 적용하여 소결 조제 첨가량의 변화와 소결 시간의 변화에 따른 소결 특성, 미세구조 및 열전도도 측성에 대하여 조사하였다. $Y_2O_3$의 첨가로 인하여 AlN의 치밀화가 첨가하지 않은 경우보다 증진됨을 확인할 수 있었으며, 결정립계 및 결정립계 삼중점에서 YAG 이차상을 형성함으로써 AlN 결정 격자 내의 산소 결함 농도를 낮춰 열전도도를 향상시킴을 알 수 있었다. 특히, 소결 시간을 증대함에 따라 결정립 성장 및 열전도도의 방해 요소인 YAG 이차상이 고온에서 휘발됨에 따라 열전도도가 크게 향상됨을 확인할 수 있었다.

Thermoelectric and Transport Properties of FeV1-xTixSb Half-Heusler System Synthesized by Controlled Mechanical Alloying Process

  • Hasan, Rahidul;Ur, Soon-Chul
    • Electronic Materials Letters
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    • 제14권6호
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    • pp.725-732
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    • 2018
  • The thermoelectric and transport properties of Ti-doped FeVSb half-Heusler alloys were studied in this study. $FeV_{1-x}Ti_xSb$ (0.1 < x < 0.5) half-Heusler alloys were synthesized by mechanical alloying process and subsequent vacuum hot pressing. After vacuum hot pressing, a near singe phase with a small fraction of second phase was obtained in this experiment. Investigation of microstructure revealed that both grain and particle sizes were decreased on doping which would influence on thermal conductivity. No foreign elements pick up from the vial was seen during milling process. Thermoelectric properties were investigated as a function of temperature and doping level. The absolute value of Seebeck coefficient showed transition from negative to positive with increasing doping concentrations ($x{\geq}0.3$). Electrical conductivity, Seebeck coefficient and power factor increased with the increasing amount of Ti contents. The lattice thermal conductivity decreased considerably, possibly due to the mass disorder and grain boundary scattering. All of these turned out to increase in power factor significantly. As a result, the thermoelectric figure of merit increased comprehensively with Ti doping for this experiment, resulting in maximum thermoelectric figure of merit for $FeV_{0.7}Ti_{0.3}Sb$ at 658 K.

Effect of Ni Additions on the Microstructure, Mechanical Properties, and Electrical Conductivity of Al Alloy

  • Yoo, Hyo-Sang;Kim, Yong-Ho;Kim, Cheol-Woo;Choi, Se-Weon;Son, Hyeon-Taek
    • 한국재료학회지
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    • 제31권12호
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    • pp.672-676
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    • 2021
  • In this paper, the effect of Ni (0, 0.5 and 1.0 wt%) additions on the microstructure, mechanical properties and electrical conductivity of cast and extruded Al-MM-Sb alloy is studied using field emission scanning electron microscopy, and a universal tensile testing machine. Molten aluminum alloy is maintained at 750 ℃ and then poured into a mold at 200 ℃. Aluminum alloys are hot-extruded into a rod that is 12 mm in diameter with a reduction ratio of 39:1 at 550 ℃. The addition of Ni results in the formation of Al11RE3, AlSb and Al3Ni intermetallic compounds; the area fraction of these intermetallic compounds increases with increasing Ni contents. As the amount of Ni increases, the average grain sizes of the extruded Al alloy decrease to 1359, 536, and 153 ㎛, and the high-angle grain boundary fractions increase to 8, 20, and 34 %. As the Ni content increases from 0 to 1.0 wt%, the electrical conductivity is not significantly different, with values from 57.4 to 57.1 % IACS.

상압 소결법으로 제조된 이트리아 첨가 질화 알루미늄 세라믹스의 미세 구조 및 열전도도 (Microstructure and thermal conductivity of AIN ceramics with ${Y_2}{O_3}$ fabricated by pressureless sintering)

  • 채재홍;박주석;안종필;김경훈
    • 한국결정성장학회지
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    • 제19권1호
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    • pp.33-38
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    • 2009
  • AIN 소결에 있어서 ${Y_2}{O_3}$를 소결 조제로하여 $1,700{\sim}1,900^{\circ}C$의 온도에서 상압소결하엿을 때 ${Y_2}{O_3}$ 첨가와 소결 유지 시간이 소결 특성, 미세 구조 및 열전도도에 미치는 영향에 관하여 평가하였다. ${Y_2}{O_3}$의 첨가에 따라 AIN 시편은 치밀화가 증진되고 열전도도가 증가됨을 확인할 수 있었다. 이러한 결과는 AIN 분말 표면의 ${Al_2}{O_3}$${Y_2}{O_3}$의 반응으로 형성된 이차상에 기인한 것으로, 첨가된 ${Y_2}{O_3}$${Al_2}{O_3}$와의 반응으로 치밀화에 기여를 하여 고온에서 액상의 형성으로 급속히 치밀화를 증진시키며, AIN 결정격자 내부로 유입될 수 있는 산소의 양을 감소시킴으로써 AIN 시편의 열전도도를 증가시키는 것을 알 수 있었다. 또한 소결시간의 증가에 따라 열전도도는 급격히 증가하였는데 이는 결정립계의 이차상이 고온에서 휘발되어 그 양이 감소함에 기인하는 것으로 파악되었다. $1,900^{\circ}C$ 5시간 소결한 시편의 열전도도는 약 $141\;Wm^{-1}K^{-1}$ 값을 나타내었고 이는 1시간 소결한 시편과 비교하여 20% 이상 증가된 값이었다.

Influence of Annealing Temperature on Structural and Thermoelectrical Properties of Bismuth-Telluride-Selenide Ternary Compound Thin Film

  • Kim, Youngmoon;Choi, Hyejin;Kim, Taehyeon;Cho, Mann-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.304.2-304.2
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    • 2014
  • Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

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