• Journal of Welding and Joining
• /
• v.33 no.5
• /
• pp.26-30
• /
• 2015

Hastelloy X in this study was applied in jet engine F-15 air fighter as shroud to isolate the engine from outer skin. After 15 years operation at elevated temperature the mechanical properties decreased gradually due to the precipitation of continues second phases in the grain boundaries and precipitated inside the grain. The crack happened at the edge of the shroud due to the thermal and mechanical stress from jet engine. Selective TEM analysis found that the grain boundaries consist of $M_{23}C_6$ carbide, $M_6$ Ccarbide and small percentage of sigma(${\sigma}$) phase. Furthermore, it was confirmed the nano size of ${\sigma}$ and miu (${\mu}$) phase inside the grain. In this study, it was investigated the microstructure of the degraded shroud component and HAZ of repair welded shroud. In the HAZ, it was observed the dissolution of the $M_{23}C_6$ carbides and smaller precipitates, the migration of the undissolved larger $M_{23}C_6$ carbide and $M_6$ Ccarbide. It is also observed the liquation due to the simply melt of the segregated precipitates in the grain boundaries. Interestingly, the segregated second phases which simply melt in the grain boundaries more easily happened at higher heat input welding condition. High temperature tensile test was done at $300^{\circ}C$, $700^{\circ}C$ and $900^{\circ}C$. It was obtained that the toughness of welded sample is lower compare to the non-welded sample. The solution heat treatment at $1170^{\circ}C$ for 5 minutes was suggested to obtain a better mechanical properties of the shroud. The high cycle fatigue number of the repair welded shroud shows a much lower compare to the shroud. In addition, the high cycle fatigue number at room temperature after solution heat treatment was almost double compare to the before solution heat treatment under 420-500MPa stress amplitude. However, the high cycle fatigue number of repaired welded sample was shown a much lower compare to the non- welded shroud and solution treated shroud. One of the main reasons to decrease the tensile strength and the high cycle fatigue properties of the repair welded shroud is the formation of the liquid phase in HAZ.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.254-255
• /
• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Journal of Welding and Joining
• /
• v.31 no.3
• /
• pp.31-38
• /
• 2013

The transition of serrated grain boundary and its effect on liquation behavior in the simulated weld heat-affected zone (HAZ) have been investigated in a wrought Ni-based superalloy Alloy 263. Recently, the present authors have found that grain boundary serration occurs in the absence of adjacent coarse ${\gamma}^{\prime}$ particles or $M_{23}C_6$ carbides when a specimen is direct-aged with a combination of slow cooling from solution treatment temperature to aging temperature. The present study was initiated to determine the interdependence of the serration and HAZ property with a consideration of this serration as a potential for the use of a hot-cracking resistant microstructure. A crystallographic study indicated that the serration led to a change in grain boundary character as special boundary with a lower interfacial energy as those terminated by low-index {111} boundary planes. It was found that the serrated grain boundaries are highly resistant to boron enrichment, and suppress effectively grain coarsening in HAZ. Furthermore, the serrated grain boundaries showed a higher resistance to susceptibility of liquation cracking. These results was discussed in terms of a significant decrease in interfacial energy of grain boundary by the serration.

• 한국초전도학회:학술대회논문집
• /
• v.13
• /
• pp.34-34
• /
• 2003

• Journal of the Korean Ceramic Society
• /
• v.36 no.12
• /
• pp.1310-1315
• /
• 1999

• Korean Journal of Materials Research
• /
• v.26 no.12
• /
• pp.714-720
• /
• 2016

We performed this study to understand the effect of a single-crystalline anode on the mechanical properties of as-deposited films during electrochemical deposition. We used a (111) single- crystalline Cu plate as an anode, and Si substrates with Cr/Au conductive seed layers were prepared for the cathode. Electrodeposition was performed with a standard 3-electrode system in copper sulfate electrolyte. Interestingly, the grain boundaries of the as-deposited Cu thin films using single-crystalline Cu anode were not distinct; this is in contrast to the easily recognizable grain boundaries of the Cu thin films that were formed using a poly-crystalline Cu anode. Tensile testing was performed to obtain the mechanical properties of the Cu thin films. Ultimate tensile strength and elongation to failure of the Cu thin films fabricated using the (111) single-crystalline Cu anode were found to have increased by approximately 52 % and 37 %, respectively, compared with those values of the Cu thin films fabricated using apoly-crystalline Cu anode. We applied ultrasonic irradiation during electrodeposition to disturb the uniform stream; we then observed no single-crystalline anode effect. Consequently, it is presumed that the single-crystalline Cu anode can induce a directional/uniform stream of ions in the electrolyte that can create films with smeared grain boundaries, which boundaries strongly affect the mechanical properties of the electrodeposited Cu films.

• 한국전자현미경학회:학술대회논문집
• /
• 2001.11a
• /
• pp.60-62
• /
• 2001

• Korean Journal of Materials Research
• /
• v.4 no.3
• /
• pp.329-333
• /
• 1994

A large number of grain boundaries were seen to crack in near-eutectic solder joints of leadless ceramic chip carriers (LLCC's) during thermal cycling at temperature ranges from -$35^{\circ}C$ to +$125^{\circ}C$ with lhr time period. One potential explanation for this type of cracking might be the presence of embrittling species on the boundary. Although there do not appear to be any instances reported in the literature of solders being embrittled by small amounts of contaminating species, the possibility of such an occurrence exists. The potential presence of impurities located at crack surfaces was inspected using Scanning Auger Microprobe(SAM) and it was found that intergranular cracking could be accomplished by the oxidation of the grain boundary. A physical model for fatigue crack growth was introduced, in which grain boundary separation took place under oxidation facilitated by sliding.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1361-1363
• /
• 1997

Zinc oxide-based MOV was fabricated with $SiO_2$ additive ranging from 0.5 to 4.0 mol%, and the microstructure and electrical characteristics were investigated. $Zn_2SiO_4$ phase formed by $SiO_2$ additive was distributed at ZnO grains, grain boundaries, and multiple grain junctions. As the content of $SiO_2$ additive increases, average grain size decreased from 40.6 to $26.9{\mu}m$ due to the Pinning effect by $Zn_2SiO_4$ at grain boundaries Breakdown voltage and nonlinear exponent increased, and leakage current decreased in the range of $11.2{\sim}6.14{\mu}A$ with an increasing $SiO_2$. Donor concentration and interface state density decreased, and barrier height increased in the range of $0.71{\sim}1.04eV$ with an increasing $SiO_2$. While, as the content of $SiO_2$ additive, apparent dielectric constant decreased, peak frequency of dissipation factor decreased in the range of $6.45{\times}10^5{\sim}3.00{\times}10^5Hz$, and dissipation peak was $0.31{\sim}0.22$ at Peak frequency.

• Korean Journal of Materials Research
• /
• v.6 no.6
• /
• pp.561-567
• /
• 1996

The grain size effect on grain boyndary cracking in Pb-Sn eutectic during isothermal fatigue was investigated. Fatigue experiments were confined to two conditions : (1) 0.4% total strain range(approximetely 0.2% plastic strain range), 1.67$\times$10$^{-3}$/s frequency; and (2) 1.5% total strain rante(approximately 1.2% plastic strain range), 8.33$\times$10$^{-4}$/s frequency. Fatigue specimens were cross-sectioned to monitor the depth of crack growth continuosly and then, the maximum crack depths in units of the number of boundaries were plotted as functions of number of cycles for these two different strain ranges. The results revealed that the rate of crack growth(per cycle at fixed rate of crosshead motion) can be expressed as dc/dN=($\Delta$$\varepsilon$$_p$)$^n$c where n is typically 2, c is the crack length, $\Delta$$\varepsilon$$_p$ is the plastic strain range, and A is a "constant" that depends on whether the crack is deeper or shallower than its first triple point of the grain boundary, A decrdases by about a factor of three after the crack hits the first triple point, indecating that the fatigue crack is trapped at the triple point of the grain boundaries.