• Electrical & Electronic Materials
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• v.7 no.5
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• pp.417-424
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• 1994

PbNb$_{2}$O$_{6}$ piezoelectric ceramics have good properties, but the applications of them have been limited due to the problems of microstructures. In the present study, effects of additives on the phase stability, microstructure, and electrical proper-ties of ferroetectric phase were investigated. La$_{2}$O$_{3}$, Nd$_{2}$O$_{3}$ and Sm$_{2}$O$_{3}$ were added with the amounts of 1, 3, 5 mol% respectively. The results showed that single orthorhombic(ferroelectric phase) phase compared with the mixed phase of pure PbNb2O6 was obtained. In the case of 5 mol% Nd$_{2}$O$_{3}$ addition, relative density of >95% and dense microstructure with -2.mu.m grain size were obtained.d.

• Corrosion Science and Technology
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• v.3 no.3
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• pp.112-117
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• 2004

This work investigated the material properties of Ni-P-B alloy electrodeposits obtained from a Ni sulfamate bath as a function of the contents of the P and B sources($H_3PO_3$ and dimethyl amine borane complex(DMAB), respectively) with/without additives. Chemical composition, residual stress, microstructure and micro hardness were investigated using ICP(inductively coupled plasma) mass spectrometer, flexible strip, XRD, TEM and micro Vickers hardness tester, respectively. From the results of the compositional analysis, it was observed that P and B are incorporated competitively during the electrodeposition and the sulfur from the additive is codeposited into the electrodeposit. The measured residual stress value increased in the order of Ni, Ni-P, Ni-B and Ni-P-B electrodeposits indicating that boron affects the residual tensile stress greater than phosphorus. As the contents of the alloying element sources of P and B increased, crystallinity and the grain size of the electrodeposit decreased. The effect of boron on crystallinity and grain size was also relatively larger than the phosphorus. It can be explained that the boron with a smaller atomic radius contributes to the increase of residual stress in the tensile direction and the larger restraining force against the grain growth more significantly than the phosphorus with a larger atomic radius. Introduction of an additive into the bath retarded crystallization and grain growth, which may be attributed to the change of the grain growth kinetics induced by the additive adsorbed on the substrate and electrodeposit surfaces during electrodeposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.969-974
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• 1998

The effects of $La_2O_3$on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size increased in the range of 21.9~56.3$\mu$ m with increasing $La_2O_3$additive content(0.0~2.0 mol%). La was, of course grain boundary, largely segregated at the nodal point. As $La_2O_3$additive content increases, threshold voltage and nonlinear coefficient decreased and leakage current increased. In particular, 2.0 mol% $La_2O_3$-added varistor exhibited low threshold voltage 17.0V/mm and nonlinear coefficient of about 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.316-320
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• 1991

The dielectric properties of the ZnO varistor fabricated by the method of 3-composition seed grain was studied. In this paper, we present the C-V charateristic for the specimen. The dielectric constant and disppation which changed with additives may be explained on the basis of the deplation layer; the presence of deplation layer has been inferred by donor and state density obtained from the $1/C^2$ vs. V.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.542-547
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• 2005

Keys to the attainment of tailored properties in SiC ceramics are microstructure control and judicious selection of the sintering additives. In this study, three different strategies for controlling microstructure of liquid-phase-sintered SiC ceramics (LPS-SiC) have been suggested: control of the initial $\alpha-SiC$ content in the starting powder, a seeding technique, and a post-sintering heat treatment. The strategies suggested offer substantial flexibility for producing toughened SiC ceramics whereby grain size, grain size distribution, and aspect ratio can be effectively controlled. The present results suggest that the proposed strategies are suitable for the manufacture of toughened SiC ceramics with improved toughness.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.269-278
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• 1991

Fine AlN powder was synthesized by carbothermal reduction and nitridation of alumimun hydroxide prepared from Al-isopropoxide. AlN ceramics with Y2O3 and CaO were prepared by hot-pressing under the pressure of 30 MPa at 180$0^{\circ}C$ for 1 h in N2 atmosphere. Grain boundary behavior and purification mechanism of AlN lattice were examined by heat treatment of AlN ceramics at 185$0^{\circ}C$ for 1-6 h in N2 atmosphere. AlN ceramics without sintering additives showed poor sinterability. However, Y2O3-doped and CaO-doped AlN ceramics were fully densified nearly to theoretical density. As the heat treatment time increased, c-axis lattice parameter increased. This is attributed to the removal of Al2O3 in AlN lattice. This purification effect of AlN attice depended upon the quantity of secondary oxide phase in the inintial stage of heat treatment and the heat treatment time.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1495-1497
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• 1998

The effects of lanthania on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size was increased in the range of 21.9$\sim$56.3${\mu}m$ with increasing lanthania content(0.0$\sim$2.0mol%). La was largely segregated at the grain boundary. As lanthania content increases, threshold voltage and nonlinear coefficient were decreased and leakage current was increased. In particular 2.0mol% lanthania-added varistor exhibited low threshold, voltage 17.0V/mm and nonlinear coefficient of around 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.106-112
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• 1995

In order to examine the effect of CuO and Al2O3 addition on the electrical conductivity of ZnO, both Al2O3 (0, 1, 2, 5, 10at.%) and CuO (1, 5at.%) were added to ZnO. Al2O3 addition (~2at.% Al) increased the total electrical conductivity of ZnO which was already decreased by CuO doping effect Above solid solubility of Al (~2at.%), ZnAl2O4 formed and the total electrical conductivity decreased due to the decrease of sintered density. Impedance measurements were used to know the reason and degree of contribution of three resistive elements, ZnO grain, ZnO/CuO, and ZnO/ZnO grain boundaries, to the total electrical conductivity changed.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.193-200
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• 2000

Si$_3$N$_4$powder with 2 wt% $Al_2$O$_3$and 6 wt% $Y_2$O$_3$additives was sintered by the gas pressure sintering (GPS) technique. The unlubricated wear behavior depending on sintering conditions such as sintering temperature, pressure, and sintering time was investigated. When the sintering temperature and time increased, the larger elongated grains were formed and the microstructural heterogeneity increased. When sintering pressure increased, grain growth, however, was impeded. Also, the wear properties depended on microstructure and friction coefficient were related to grain size. Based on the experimental results, the wear properties were associated with initial friction coefficients as well as mechanical properties including fracture toughness and flexural strength.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.115-120
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• 2004

Perovskite barium-strontium titanate, $(Ba, Sr)TiO_3$ was prepared and effects of $Sb_2$O$_3$ additives on its PTCR properties were investigated. $The (Ba,Sr)TiO_3$ with 0.05～0.25 mol% $Sb_2$$O_3$ showed semiconducting PTCR behavior and anomalous grain growth was also observed when it was sintered above $1330^{\circ}C$. It was considered that charge compensation by doping 8b203 as well as abnormal grain growth by sintering lead to resistivity reduction from insulating to semiconducting transition.