• Title/Summary/Keyword: Grain Deformation Method

Search Result 86, Processing Time 0.023 seconds

A study on the process for the preparation of Ag/Bi-2223 superconducting tapes by powder in tube methoe (분말충진법에 의한 Ag/Bi-2223고온초전도 선재의 제조공정에 관한 연구)

  • Kim, U-Gon;Lee, Ho-Jin;Won, Dong-Yeon;Hong, Gye-Won
    • Korean Journal of Materials Research
    • /
    • v.4 no.4
    • /
    • pp.406-415
    • /
    • 1994
  • The effects of fabrication method and condition on critical current density of Ag sheathed Bi- 2223 superconducting tapes by powder-in-tube method were studied. The highest critical current density (Jc) in the whole process was measured in the repeative heat treatment of 250 hour and mechanical deformation of 2 times. These results are suggested that the high-Tc phase at the heat treatment of 250 hour was superior and the good grain alignment at the mechanical deformation of 2 times was analyzed by XRD pattern. The highest critical current density obtained by pressing method was $1.05\times 10^4A/\textrm{cm}^2$ and $0.78\times 10^4A/\textrm{cm}^2$ in case of rolling method. The multifilamentary wires with 7 and 49 filaments were fabricated to check the applicability of pressing and rolling method for preparing multifilaments wire. The critical current density of 7 filaments tapes prepared by pressing showed $0.45 \times 10^{4}A/\textrm{cm}^2$ and $0.20 \times 10^{4}A/\textrm{cm}^2$ for 49 filaments tapes prepared by rolling.

  • PDF

Characteristics of Fe-6.5wt%Si Core Material by Chemical Vapor Deposition Method (화학기상증착에 의한 Fe-6.5wt%Si철심재료의 특성평가)

  • Yun, Jae-Sik;Kim, Byeong-Il;Park, Hyeong-Ho;Bae, In-Seong;Lee, Sang-Baek
    • Korean Journal of Materials Research
    • /
    • v.11 no.6
    • /
    • pp.512-518
    • /
    • 2001
  • It has been well known that 6.5wt% Si steel sheets have excellent magnetic properties such as low core loss. high maximum permeability and low magnetostriction. In this work, we studied a method for producing 6.5wt% Si steel sheets using a chemical vapor deposition (CVD) method. The following is the procedure adopted in this work to produce 6.5wt% Si steel sheets; SiCl$_4$ gas is applied onto a low content-Si steel sheet placed in a tube furnace. Silicon atoms resulted from the decomposition of SiCl$_4$ are permeated through the surface of the steel sheet. Finally, by the diffusion process maintaining it under a high temperature the silicon atoms diffuse uniformly into the sheet. Through this process, 6.5wt% Si steel sheets can be obtained. The manufactured Fe-6.5wt% Si steel sheet with a thickness of 0.5mm exhibited a high frequency core loss (W$_{2}$1k/) of 8.92 W/kg. Its permeability increased from 37,100 to 53,300 at 1 tesular(T). The mechanical properties of the manufactured steel sheets were also estimated and the result showed that the workability was significantly improved by annealing in vacuum at 773k. Increased plastic deformation was also observed prior to fracture and the amount of grain boundary rupture was reduced.

  • PDF

Numerical simulation of dimensional changes during sintering of tungsten carbides compacts

  • Bouvard, D.;Gillia, O.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
    • /
    • 1997.10a
    • /
    • pp.7-7
    • /
    • 1997
  • During sintering of very porous green bodies, as obtained by compaction of hard powders - such as tungsten carbide or ceramics - or by injection moulding, important shrinkage occurs. Due to heterogeneous green density field, gravity effects, friction on the support, thermal gradients, etc., this shrinkage is often non-uniform, which' may induce significant shape changes. As the ratio of compact dimension to powder size is very high, the mechanics of continuum is relevant to model such phenomena. Thus numerical techniques, such as the finite element method can be used to simulate the sintering process and predict the final shape of the sintered part. Such type of simulation has much been developed in the last decade firstly for hot isostatic pressing and next for die compaction. Finite element modelling has been recently applied to free sintering. The simulation of sintering should be based on constitutive equations describing the thermo-mechanical behaviour of the material under any state of stress and any temperature which may arise within the sintering body. These equations can be drawn either from experimental data or from micromechanical models. The experiments usually consist in free sintering and sinter-forging tests. Indeed applying more complex loading conditions at high temperature under controlled atmosphere is delicate. Micromechanical models describe the constitutive behaviour of aggregates of spheres from the deformation of two-sphere contact either by viscous flow or grain boundary diffusion. Such models are not able to describe complex microstructure and mechanisms as observed in real materials but they can give some basic information on the formulation of constitutive equations. Practically both experimental and theoretical approaches can be coupled to identify the constitutive equations. Such procedure has been performed for modelling the sintering of compacts obtained by die pressing of a mixture of tungsten carbide and cobalt powders. The constitutive behaviour of this material during sintering has been described by a linear viscous constitutive model, whose functions have been fitted from results of free sintering and sinter-forging experiments. This model has next been introduced in ABAQUS finite element code to simulate the sintering of heterogeneous green compacts of various geometries at constant temperature. Examples of simulations are shown and compared with experiments.

  • PDF

Mechanical Properties of OFC Copper Fabricated by Multi-Axial Diagonal Forging (MADF) (다축대각단조(MADF) 가공한 구리의 기계적 성질)

  • Kwon, S.C.;Kim, S.T.;Kim, D.V.;Lee, J.K.;Seo, S.J.;Yoon, T.S.;Jeong, H.T.
    • Transactions of Materials Processing
    • /
    • v.27 no.4
    • /
    • pp.250-256
    • /
    • 2018
  • Oxygen-free copper (OFC) was prepared as a 90 mm cube and then processed with Multi-Axial Diagonal Forging - Initialization of Prior manufacturing History (MADF). The MADF process has been newly developed as a severe plastic deformation method. The MADF process consists of upset forging with a thickness reduction of 30% and diagonal forging with a diagonal angle of $135^{\circ}$. 1 cycle process consists of a 12 passes forging process. In order to analyze the characteristic changes according to the number of iterations, 1, 2, and 3 cycles of the MADF process were performed. The OFC specimens were MADF processed without surface cracks up to 3 cycles. The microstructure, hardness and tensile test of processed materials were analyzed to study the change of material properties according to the amount of MADF process. The results showed that the MADF process effectively refined the microstructure and increased the strength of OFC. In the case of specimens processed for more than 2 cycles, the grains of all measurement regions were refined to be less than $7{\mu}m$ of grain size. The 1 cycle MADF processed OFC showed the highest mechanical properties with the hardness of 132 HV and tensile strength of 395 MPa. Hardness and strength seemed to be saturated when processed over 2 cycles.

A New process for the Solid phase Crystallization of a-Si by the thin film heaters (박막히터를 사용한 비정질 실리콘의 고상결정화)

  • 김병동;정인영;송남규;주승기
    • Journal of the Korean Vacuum Society
    • /
    • v.12 no.3
    • /
    • pp.168-173
    • /
    • 2003
  • Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

The Effects of Electrode Distance on the Formation of $(ZnS)_{1-x}(SiO_2)_x$ Protective Films in Phase Change Optical Disk by R.F. Sputtering Method (R.F. Sputtering 방법에 의한 상변화형 광디스크의 $(ZnS)_{1-x}(SiO_2)_x$ 보호막 형성에 미치는 전극거리의 영향)

  • Lee, Jun-Ho;Kim, Do-Hun
    • Korean Journal of Materials Research
    • /
    • v.9 no.12
    • /
    • pp.1245-1251
    • /
    • 1999
  • Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

  • PDF