• 제목/요약/키워드: Glass film

검색결과 1,943건 처리시간 0.032초

Formation of Quantum Dot Fluorescent Monolayer Film using Peptide Bond

  • Inami, Watau;Nanbu, Koichi;Miyakawa, Atsuo;Kawata, Yoshimasa
    • 정보저장시스템학회논문집
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    • 제8권1호
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    • pp.1-5
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    • 2012
  • We present a method for preparing a quantum dot fluorescent monolayer film on a glass substrate. Since nanoparticles aggregate easily, it is difficult to prepare a nanoparticle monolayer film. We have used a covalent bond, the peptide bond, to fix quantum dots on the glass substrate. The surface of the quantum dot was functionalized with carboxyl groups, and the glass substrate was also functionalized with amino groups using a silane coupling agent. The carboxyl group can be strongly coupled to the amino group. We were able to successfully prepare a monolayer film of CdSe quantum dots on the glass substrate.

Textured-AZO/AZO/Glass 투명전극을 갖는 염료감응 태양전지의 광전변환 특성 (Photoelectric Conversion Properties of Dye-sensitized Solar Cell in the Transparent Electrode of Textured-AZO/AZO/Glass)

  • 서빙;박춘배;황근창
    • 한국전기전자재료학회논문지
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    • 제25권1호
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    • pp.37-43
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    • 2012
  • We were studied that AZO conductive thin film can substitute for FTO electrode in dye sensitized solar cell. Three types of AZO films were deposited on soda-lime glass(AZO/glass, AZO/AZO/glass, textured AZO/AZO/glass) using RF magnetron sputtering process and investigated their properties of electrical, optical, and photoelectric conversion rate. The textured AZO/AZO/glass has the lowest resistivity of $3.079{\times}10^{-4}\;{\Omega}cm$ among other films. And the optical transmittance rate was better than both non textured AZO/AZO/glass and FTO/glass in the visible region. After manufacturing dye solar cells using the three types of AZO films, the textured AZO/AZO/glass showed the highest photoelectric conversion rate of 3.68% among AZO samples. But the transformation rate was slightly lower than FTO cells (4.52%). However, the conductive film of textured AZO/AZO/glass can be applicable to use an electrode in solar cells as cost-effective products.

The Effect of Thickness on Flexible, Electrical and Optical properties of Ti- ZnO films on Flexible Glass by Atomic Layer Deposition

  • 이우재;윤은영;권세훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.196.1-196.1
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    • 2016
  • TCO(Transparent Conducting Oxide) on flat glass is used in thin-film photovoltaic cell, flat-panel display. Nowadays, Corning(R) Willow Glass(R), known as flexible substrate, has attracted much attention due to its many advantages such as reliable roll-to-roll glass processing, high-quality flexible electronic devices, high temperature process. Also, it can be an alternative to flexible polymer substrates which have their poor stability and degradation of electrical and optical qualities. For application on willow glass, the flexibility, electrical, optical properties can be greatly influenced by the TCO thin film thickness due to the inherent characterization of thin film in nanoscale. It can be expected that while thick TCO layer causes poor transparency, its sheet resistance become low. Also, rarely reports were focusing on the influence of flexible properties by varying TCO thickness on flexible glass. Therefore, it is very important to optimize TCO thickness on flexible Willow glass. In this study, Ti-ZnO thin films, with different thickness varied from 0 nm to 50 nm, were deposited on the flexible willow glass by atomic layer deposition (ALD). The flexible, electrical and optical properties were investigated, respectively. Also, these properties of Ti-doped ZnO thin films were compared with un-doped ZnO thin film. Based on the results, when Ti-ZnO thin films thickness increased, resistivity decreased and then saturated; transmittance decreased. The Figure of Merit (FoM) and flexibility was the highest when Ti-ZnO thickness was 40nm. The flexible, electrical and optical properties of Ti-ZnO thin films were better than ZnO thin film at the same thickness.

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스퍼터링 방법을 이용한 중금속 산화물 유리 박막의 증착 (Deposition of Heavy Metal Oxide Glass Thin Films by R.F. Magnetron Sputtering)

  • 김웅권;허종;제정호
    • 한국세라믹학회지
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    • 제32권6호
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    • pp.669-676
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    • 1995
  • In this study, EO glass films were deposited by R.F. magnetron sputtering using EO glass target. The glass formation of the EO film was greatly dependent on the substrate temperature and the crystallization started at approximately 28$0^{\circ}C$. As the temperature of the substrate or the oxygen content in the sputtering gas increased, UV/VIS/NIR absorption edge moved toward longer wavelength. A wave guiding phenomenon was observed from the prism-coupler experiment and a fluorescence of 1.06${\mu}{\textrm}{m}$ originated from 4Fe3/2longrightarrow4I11/2 transition of Nd3+ was detected from the film containing Nd3+ ions.

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Estimation of Phosphorus Concentration in Silicon Thin Film on Glass Using ToF-SIMS

  • Hossion, M. Abul;Murukesan, Karthick;Arora, Brij M.
    • Mass Spectrometry Letters
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    • 제12권2호
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    • pp.47-52
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    • 2021
  • Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 101~104 counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 1019~1021 atoms/cm3. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.

Effect of Binder Glass Crystallization on Electrical Properties in $RuO_2$-Thick Film Resistor

  • Sungmin Kwon;Kim, Cheol-Young
    • The Korean Journal of Ceramics
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    • 제2권1호
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    • pp.33-38
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    • 1996
  • In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

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Characteristics of fluoride/glass as a seed layer for microcrystalline silicon film growth

  • Choi, Seok-Won;Kim, Do-Young;Ahn, Byeong-Jae;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.65-66
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    • 2000
  • Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

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Nucleation and growth mechanism of nitride films deposited on glass by unbalanced magnetron sputtering

  • Jung, Min J.;Nam, Kyung H.;Han, Jeon G.
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2001년도 춘계학술발표회 초록집
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    • pp.14-14
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    • 2001
  • Nitride films such as TiN, CrN etc. deposited on glass by PVD processes have been developed for many industrial applications. These nitride films deposited on glass were widely used for not only decorative and optical coatings but also wear and corrosion resistance coatings employed as dies and molds made of glass for the example of lens forming molds. However, the major problem of nitride coatings on glass by PVD process is non-uniform film owing to pin-hole and micro crack. It is estimated that nonuniform coating is influenced by a different surface energy between metal nitrides and glass due to binding states. In this work, therefore, for the evaluation of nucleation and growth mechanism of nitride films on glass TiN and CrN film were synthesized on glass with various nitrogen partial pressure by unbalanced magnetron sputtering. Prior to deposition, for the examination of relationship between surface energy and film microstructure plasma pre-treatment process was carried out with various argon to hydrogen flow rate and substrate bias voltage, duty cycle and frequency by using pulsed DC power supply. Surface energy owing to the different plasma pre-treatment was calculated by the measurement of wetting angle and surface conditions of glass were investigated by X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscope(AFM). The microstructure change of nitride films on glass with increase of film thickness were analyzed by X-Ray Diffraction(XRD) and Scanning Electron Microscopy(SEM).

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Interlayer film 재료 및 구성에 따른 접합유리 차음성능 비교 (A Comparative Study on the Sound Insulation Characteristics of Laminated Glass in Accordance with Material and Composition of Interlayer Film)

  • 홍지영;고상원;고효인;장승호
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2013년도 추계학술대회 논문집
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    • pp.501-505
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    • 2013
  • It is well known that monolithic glass has specific coincidence dip allowing transmittance of noise around the critical frequency. Laminated glass, made of a polyvinyle butyral(PVB) interlayer sandwiched by two panes of glass sheet, has long served for the advantage in noise attenuation properties as well as the safety purpose. More research on the improvement of sound insulation performance is needed, considering much of the noise is still transmitted through the glass. As a preliminary study, authors have made several test specimens, varied combinations of glass and interlayer film, to optimize the acoustic performance. Experimental investigation was carried out to study the sound transmission loss of test specimens in the reverberation chamber by using sound intensity method. Several new applications, instead of the existing PVB laminated glass, show better results in sound transmission loss and low temperature have a bad influence on the acoustic performance.

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창호 유리의 단열필름 시공에 따른 생애주기비용 비교 분석 (A Comparative Analysis of Life Cycle Cost on the Window Glass and the Insulation Film Coated Glass for Window)

  • 정민구;김광희
    • 한국건축시공학회지
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    • 제14권6호
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    • pp.583-590
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    • 2014
  • 본 연구에서는 경제적인 창호공사 방안을 확인하기 위해 단열필름이 시공된 창호유리와 일반유리의 생애주기비용을 분석하여 비교하고자 하였다. 이를 위해 Window 6.3과 ECO2-OD 시뮬레이션 프로그램을 사용하여 유리 유형별 창호의 열성능 데이터를 측정하고 사례 건물에 적용하여 냉 난방 유지비용 및 LCC를 산출하여 경제성을 비교하였다. 연구결과 단열필름을 추가적으로 시공함으로써, 냉 난방 유지비용 측면에서는 하절기 태양열이 실내로 투과하는 것을 막아 냉방비용 절감 효과가 있지만, 이로 인해 동절기에는 난방비용이 증가하는 것으로 나타났다. 생애주기비용 측면에서 볼 때, 냉방비용 절감 효과가 난방비용 증가량과 필름 시공 및 수선으로 발생하는 추가비용을 상쇄하지 못하기 때문에 단열필름의 시공은 적절한 방법이 아니라고 할 수 있다.