• Journal of the Korean Chemical Society
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• v.34 no.5
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• pp.503-505
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• 1990

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.42-42
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.337-337
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.329-329
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.283-283
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• 2008

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1252-1254
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• 1998

The characteristics of linear dichroism with temperature were investigated in normally($0^{\circ}$) and $80^{\circ}$-obliquely deposited amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ thin films using low temperature equipment. The saturated dichroism($D_{sat}$) of a $80^{\circ}$-obliquely deposited film shows approximately 6% which is the larger value than 4.2 % of normally($0^{\circ}$) deposited film. The $D_{sat}$ of $80^{\circ}$-deposited film was increased to 25 % at 77 K, which is four times larger than that at room temperature. The $D_{sat}$ decreased with increasing temperature and was completely disappeared at about 335K. This could be explained as the tunneling effect due to the thermal excitation of lone-pair electrons in intimate valence alternation pairs(IVAPs) which are considered to be the origin of anisotropy. The decrease of $D_{sat}$ with increasing temperature from 77K to room temperature satisfied Gaussian approximation with a standard deviation of 158K.

• ETRI Journal
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• v.31 no.6
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• pp.667-674
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• 2009

Terahertz time-domain spectroscopy has been used to study the optical and dielectric properties of three chalcogenide glasses: $Ge_{30}As_8Ga_2Se_{60}$, $Ge_{35}Ga_5Se_{60}$, and $Ge_{10}As_{20}S_{70}$. The absorption coefficients ${\alpha}({\nu})$, complex refractive index n(${\nu}$), and complex dielectric constants ${\varepsilon}({\nu})$ were measured in a frequency range from 0.3 THz to 1.5 THz. The measured real refractive indices were fitted using a Sellmeier equation. The results show that the Sellmeier equation fits well with the data throughout the frequency range and imply that the phonon modes of glasses vary with the glass compositions. The theory of far-infrared absorption in amorphous materials is used to analyze the results and to understand the differences in THz absorption among the sample glasses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.435-440
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• 2002

In this study, we have investigated photo-induced changes of optical energy gap( $E_{OP)}$ and photoluminescence (PL) in amorphous ($\alpha$-) S $e_{100-x}$G $e_{x}$ (x=5, 25 and 33) thin films prepared by conventional thermal evaporation method. In the $\alpha$-S $e_{100-x}$G $e_{x}$ thin film, the $E_{OP}$ is obtained by a linear extrapolation of the ($\alpha$hν)$^{\frac{1}{2}}$ versus hν plot to the energy axis using the optical absorption coefficient ($\alpha$) calculated from the extinction coefficient k measured in the wavelength range of 290~900nm. Although the values of $\Delta$ $E_{OP}$ are very different, all films exhibit photo-induced photo-darkening (PD) effect that is a red shift of $E_{OP}$ . In particular, $\Delta$ $E_{OP}$ in $\alpha$-S $e_{75}$ G $e_{25}$ thin film exhibits the largest value (i, e., $\Delta$ $E^{OP}$ ~40meV for $\alpha$-S $e_{95}$ G $e_{5}$ , $\Delta$ $E_{OP}$ ~200meV for $\alpha$-S $e_{75}$ G $e_{25}$ , $\Delta$ $E_{OP}$ ~130meV for $\alpha$-S $e_{67}$ G $e_{33}$ ). PL spectra in $\alpha$-SeGe by hν$_{HeCd}$ have no-Stokes shift (SS) and show a tendency dependent on both composition and illumination time. We explain the energy-induced phenomena such as the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..tc..

• Korean Journal of Soil Science and Fertilizer
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• v.44 no.2
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• pp.308-315
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• 2011

Ammonium- and potassium-loaded zeolite (NK-Z) and other four kinds of environmental friendly fertilizers/agents were applied to characterize their effectiveness on garlic (Allium sativum L.) growth and soil amelioration. Selenium dioxide ($SeO_2$) and germanium dioxide ($GeO_2$) liquid treatments significantly increased selenium (Se) and germanium (Ge) contents in garlic stems, garlic cloves and clove peels. In soil treated with ZBFC, Se contents in garlic stems, cloves, and clove peels was 13.89-, 12.79-, and 10.96-fold higher, respectively, than in the controls. The inorganic contents of plants grown in soil treated with functional strengthened fertilizers were also higher than in plants grown in control soil. Soil treated with arbuscular mycorrhizal fungi (AMF) agents exhibited significantly greater spore density and root colonization rate than in untreated soil. The density of chitinolytic microorganisms in soil treated with colloidal chitin was also significantly higher than in untreated soil. The cation exchange capacities (CEC) in ZAFC-, ZBFC-, and ZBF-treated soils was 16.05%, 8.95%, and 8.80% higher than in control soil 28 weeks after sowing.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.156-157
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• 1998

It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.