• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.585-589
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• 1999

In order to grow $Bi_4Ge_3O_{12}$ crystals by the Czochralski method equipped with the auto-diameter control system, we used the resistance heater of our own design. We measure the temperature gradients under-arious thermal configurations. The relation between the critical rotation rate corresponding to the flat interface and the temperature gadient was investigated, and the importance of the axial temperature gradient was pointed out. The results from this work were compared with those obtained by other authors when RF heating was used. The optimal conditions for the crystal growth were determined as follows; under $O_2$ atmosphere with the pulling rate fixed at 2 mm/hr, rotation rate changed from 30 to 23 rpm as the crystal growth proceeded, radial and axial temperature gradients were 50 and $40^{\circ}C$/cm near melts respectively, and the composition was chemically stoichiometric.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.10
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• pp.1612-1620
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• 2004

This study presents methods to estimate elastic-plastic crack opening displacement (COD) fur circumferential through-wall cracked pipes for the Leak-Before-Break (LBB) analysis of pressurized piping. Proposed methods are based not only on the GE/EPRI approach but also on the reference stress approach. For each approach, two different estimation schemes are given, one for the case when full stress-strain data are available and the other fur the case when only yield and ultimate tensile strengths are available. For the GE/EPRI approach a robust way of determining the Ramberg-Osgood (R-O) parameters is proposed, not only fur the case when detailed information on full stress-strain data is available but also for the case when only yield and ultimate tensile strengths are available. The COD estimates according to the GE/EPRI approach, using the R-O parameters determined from the proposed R-O fitting procedures, generally compare well with the published pipe test data. For the reference stress approach, the COD estimates according to the method based on both full stress-strain data and limited tensile properties are in good agreement with pipe test data. In conclusion, experimental validation given in the present study provides sufficient confidence in the use of the proposed method to practical LBB analyses even though when information on material's tensile properties is limited.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.148-152
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• 1999

the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.668-675
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• 2013

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp $H_2O_2$ (30%) and 3 vp $CH_3COOH$ (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of $Si_{0.8}Ge_{0.2}$ layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

• Solar Energy
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• v.18 no.1
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• pp.35-43
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• 1998

In two terminals monolithic tandem solar cells, tunnel diode is an important variable to improve conversion efficiency depending on current matching between the top and the bottom cells. Especially, the GaAs/Ge tandem is one of the most interesting cells for its high potential efficiency. This paper shows that physical analysis about I-V specific character of the GaAs/Ge solar cell, which is grown by MOCVD for GaAs or CVD for Ge, using computer simulation and experimental results, varying with thickness of the tunnel diode layer and concentration.

• Applied Microscopy
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• v.46 no.3
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• pp.160-163
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• 2016

Effect of dealloying condition on the formation of nanoporous structure in melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy has been investigated in the present study. In as-melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy spinodal decomposition occurs in the undercooled liquid during cooling, leading to amorphous phase separation. By immersing the as-melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy in 5 wt% HCl solution, Al-rich amorphous region is leached out, resulting in an interconnected nano-porous $GeO_x$ with an amorphous structure. The dealloying temperature strongly affects the whole dealloying process. At higher dealloying temperature, dissolution kinetics and surface diffusion/agglomeration rate become higher, resulting in the accelerated dealloying kinetics, i.e., larger dealloying depth and coarser pore-ligament structure.

• Journal of Bio-Environment Control
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• v.16 no.3
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• pp.180-185
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• 2007

The effects of selenium (Se) and germanium (Ge) fertilization on the growth and quality of Chinese cabbages cultivated in spring and autumn and peppers cultivated in spring were investigated. $Se\;(Na_2SeO_4)\;and\;Ge\;(GeO_2)$ were supplied 5, 10, or 20 times in an aqueous solution of 0, 2, 4, or $8mg{\cdot}L^{-1}$ during the cultivation of Chinese cabbages and peppers. The fresh weight of Chinese cabbages increased by Ge fertilization with high concentration. But it was not affected by Se fertilization. The content of vitamin C increased by 10 times application with $4mg{\cdot}L^{-1}$ of Se or Ge. The concentration of Se in Chinese cabbage increased according to increasing concentration of Se fertilization. Se concentration was higher in the outer leaves than in the inner leaves. Se concentration in the mesophyll was higher than that in the midrib. Ge fertilization increased the uptake and concentration of Ge in autumn-cultivated Chinese cabbages. Se and Ge fertilization did not affect the fresh weight of peppers. The content of vitamin C in pepper increased by 20 times application of $2mg{\cdot}L^{-1}$ of Se. Vitamin C content in red peppers was twice as much as in green peppers.

• Journal of Ginseng Research
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• v.31 no.3
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• pp.154-158
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• 2007

In order to increase the content of germanium in ginseng adventitious roots, the effects of chelating agents on germanium content and root growth were investigated in the submerged cultures of ginseng adventitious roots. Chelating agents such as citric acid, oxalic acid, phosphoric acid, EDTA (Ethylenediamine tetraacetic acid) or EGTA (Ethylene glycol-bis $({\beta}-aminoethylether)-tetraacetic$ acid) were administrated in the submerged culture of ginseng root containing 50 ppm $GeO_2$. After 6 weeks of cultivation, fresh weight, germanium and saponin contents in the roots were analyzed. Among chelating agents, addition of 1.0mM phosphoric acid was found to be best for germanium accumulation. Under this condition, germanium content increased 1.4 times as compared to that of the control. The germanium content in the adventitious roots also increased with addition of EDTA or EGTA, while they inhibited the growth of ginseng adventitious root. Citric and oxalic acids were not effective for increasing germanium content in adventitious roots. As the results, it suggests that the phosphoric acid can be proved as the optimal agent for the enhancement of germanium accumulation in ginseng adventitious roots. These results can be served as a guideline for the mass production of ginseng adventitious roots containing germanium by large-scale production.

• 대한방사선방어학회:학술대회논문집
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• 2009.11a
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• pp.44-45
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.74.1-74.1
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• 2007