• Journal of the Institute of Electronics Engineers of Korea SC
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• v.42 no.2 s.302
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• pp.49-58
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• 2005

A new soft switching three-phase PWM rectifier with simple circuit configuration and high efficiency has been developed. The proposed circuit is a kind of the auxiliary resonant commutated Pole(ARCP)converter The conventional ARCP converter requires three-auxiliary reactors and six-auxiliary switches for the soft switching auxiliary circuit and for these switching elements, a gate drive circuit and a control circuit are required, resulting in high part as a disadvantage. In the main circuit proposed in this paper, the auxiliary soft switching circuit is composed of two-auxiliary reactors, two-auxiliary switches and several diodes. In addition, common use of the PWM control circuit for two-switches will make the control circuit of the auxiliary switches simple. By means of function of the soft switching auxiliary circuit, the main switching element performs zero voltage switching operation and the auxiliary switches perform the zero current switching. In this paper, the circuit configuration and the operational analysis of the proposed circuit are described at first and then, experimental results will be reported. By using a prototype with 5[kW] capacity, the conversion efficiency of maximum $98.8[\%]$ and the power factor of $99[\%]$ or higher were obtained.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.114-121
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• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).