• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.285-285
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• 2013

Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

• Journal of the Korean Society of Radiology
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• v.17 no.3
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• pp.441-447
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• 2023

Lead(Pb), which is currently mainly used for shielding purposes in the medical radiation, has excellent radiation shielding functions, but is continuously exposed to radiation directly or indirectly due to the harmfulness of lead itself to the human body and the inconvenience caused by its heavy weight. Research on shielding materials that are human-friendly, lightweight, and convenient to use that can block risks and replace lead is continuously being conducted. In this study, based on the commonly used polyethylene terephthalate (PET) film and the fabric material used in actual radiation protective clothing, a multi-layer thin film was realized through sputtering and vacuum deposition of bismuth, tungsten, and tin, which are metal materials that can shield radiation. Thus, a shielding film was produced and its applicability as a radiation shielding material was evaluated. The radiation shielding film was manufactured by establishing the optimized conditions for each shielding material while controlling the applied voltage, roll driving speed, and gas supply amount to manufacture the shielding film. The adhesion between the parent material and the shielding metal thin film was confirmed by Cross-cut 100/100, and the stability of the thin film was confirmed through a hot water test for 1 hour to measure the change of the thin film over time. The shielding performance of the finally realized shielding film was measured by the Korea association for radiation application (KARA), and the test conditions (inverse wide beam, tube voltage 50 kV, half layer 1.828 mmAl) were set to obtain an attenuation ratio of 16.4 (initial value 0.300 mGy/s, measured value 0.018 mGy/s) and damping ratio 4.31 (initial value 0.300 mGy/s, measured value 0.069 mGy/s) were obtained. by securing process efficiency for future commercialization, light and shielding films and fabrics were used to lay the foundation for the application of films to radiation protective clothing or construction materials with shielding functions.

• Journal of the Korean Electrochemical Society
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• v.2 no.3
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• pp.150-155
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• 1999

The Electrochemical stabilities of the Brewer-Engel type intermetallic compounds of Co-Mo $(35 wt\%)$ and Ni-Mo$(35 wt\%)$ manufactured by the arc-melting method for the hydrogen electrode of $H_2-O_2$ alkaline fuel cell were investigated. Effects of temperature and concentration on the electrochemical behavior of the electrodes in the $80^{\circ}C$ 6 N KOH solution deaerated with $N_2$ gas were studied by electrochemical methods. The effect of overpotential on the electrochemical stabilities of Co-Mo and Ni-Mo intermetallic compounds was also discussed under the normal operation condition of AFC. It was shown that Co-Mo electrode had lower electrochemical stability as compared to Ni-Mo. In the case of Co-Mo electrode, a simultaneous dissolution of cobalt and molybdenum has occurred at low anodic overpotential form equilibrium hydrogen electrode potential, but the dissolution of cobalt was serious, and Co(OH)l layer on the electrode surface formed at the high anodic overpotential. In contrast the Ni-Mo electrode had high electrochemical stability because formation of the dense and thin protective $Ni(OH)_2$ layer prevented the dissolution of molybdenum.