• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.02a
• /
• pp.181-181
• /
• 2008

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.460-460
• /
• 2012

반도체 Device가 Shrink 함에 따라 Pattern Size가 작아지게 되고, 이로 인해 Photo Resist 물질 자체만으로는 원하는 Patterning 물질들을 Plasma Etching 하기가 어려워지고 있다. 이로 인해 Photoresist를 대체할 Hard Mask 개념이 도입되었으며, 이 Hardmask Layer 중 Amorphous Carbon Layer 가 가장 널리 사용되고 지고 있다. 이 Amorphous Carbon 계열의 Hardmask를 Etching 하기 위해서 기본적으로 O2 Plasma가 사용되는데, 이 O2 Plasma 내의 Oxygen Species들이 가지는 등 방성 Diffusion 특성으로 인해, 원하고자 하는 미세 Pattern의 Vertical Profile을 얻는데 많은 어려움이 있어왔다. 이를 Control 하기 인해 O2 Plasma Parameter들의 변화 및 Source/Bias Power 등의 변수가 연구되어 왔으며, 이와 다른 접근으로, N2 및 CO, CO2, SO2 등의 여러 Additive Gas 들의 첨가를 통해 미세 Pattern의 Profile을 개선하고, Plasma Etching 특성을 개선하는 연구가 같이 진행되어져 왔다. 본 논문에서 VLSI Device의 Masking Layer로 사용되는, Carbon 계 유기 층의 Plasma 식각 특성에 대한 연구를 진행하였다. Plasma Etchant로 사용되는 O2 Plasma에 새로운 첨가제 가스인 카르보닐 황화물 (COS) Gas를 추가하였을 시 나타나는 Plasma 내의 변화를 Plasma Parameter 및 IR 및 XPS, OES 분석을 통하여 규명하고, 이로 인한 Etch Rate 및 Plasma Potential에 대해 비교 분석하였다. COS Gas를 정량적으로 추가할 시, Plasma의 변화 및 이로 인해 얻어지는 Pattern에서의 Etchant Species들의 변화를 통해 Profile의 변화를 Mechanism 적으로 규명할 수 있었으며, 이로 인해 기존의 O2 Plasma를 통해 얻어진 Vertical Profile 대비, COS Additive Gas를 추가하였을 경우, Pattern Profile 변화가 개선됨을 최종적으로 확인 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.161-161
• /
• 1999

In the field of material science, the interests and efforts to modify the surface of materials in agreement with the need of usage have been extensively increasing. he modification to improve the wettability of surface is very important is terms of adhesion, printing, etc. It is very difficult to modify metal surface into hydrophilic one. therefore, surfactant coating has been generally used in many cases. However, surfactant has disadvantages such as environmental problem, soluble in water. in this study, hydrophilic polymer films as alternative of surfactant were deposited on metal substrate by DC plasma polymerization. Hydrophilic polymer films deposited by DC plasma show many merits such as good wettability, stone adhesion to substrate, high resistance to most chemicals. Monomer gas and reactive gas were used as source plasma polymerization. Plasma polymerized films were fabricated with process parameters of deposition time, ratio of gas mixture, current, pressure, etc. Effects of these variables on wettability of plasma polymer films will be discussed. With XPS and FT-IR analyses of plasma polymeric films, the relation between wettability and chemical state of polymer films by DC plasma was investigated.

• Journal of Welding and Joining
• /
• v.8 no.3
• /
• pp.60-69
• /
• 1990

Plasma arc cutting is a fusion cutting process in which a gas-constricted arc is employed to produce a high-temperature, high-velocity plasma jet on the workpiece. This process provides some advantages such as increased cutting velocity, excellent working accuracy and the ability to cut special materials (widely used stainless steels and Al-alloys, for example), when compared with iconventional oxyfuel gas cutting. From the view point of price and reliability of the power source, plasma arc cutting has also some distinct advantages over laser beam cutting. High-speed machines with NC or CNC systems are needed for the plasma arc or laser beam cutting process, while for oxyfuel gas cutting, low-speed machines with copying templates or optical-shape tracking sensors can be applied. The low price and high flexibility of the microprocessor arc contributing more and more the application of CNC system in the plasma arc cutting process, as in other manufacturing fields. From these points of view, a microprocessor-based plasma arc cutting system was developed by using a reference-pulse system, and its performance was tested. The interpolating routines were programmed in the assembly language for saving the memory volume and improving the compouting speed, which has an intimate relationship with the available cutting velocity.

• Environmental Engineering Research
• /
• v.17 no.2
• /
• pp.89-94
• /
• 2012

Pyrolysis/gasification technology utilizes an energy conversion technique from various waste resources, such as biomass, solid waste, sewage sludge, and etc. to generating a syngas (synthesis gas). However, one of the major problems for the pyrolysis gasification is the presence of tar in the product gas. The tar produced might cause damages and operating problems on the facility. In this study, a gliding arc plasma reformer was developed to solve the previously acknowledged issues. An experiment was conducted using surrogate benzene and naphthalene, which are generated during the pyrolysis and/or gasification, as the representative tar substance. To identify the characteristics of the influential parameters of tar decomposition, tests were performed on the steam feed amount (steam/carbon ratio), input discharge power (specific energy input, SEI), total feed gas amount and the input tar concentration. In benzene, the optimal operating conditions of the gliding arc plasma 2 in steam to carbon (S/C) ratio, 0.98 $kWh/m^3$ in SEI, 14 L/min in total gas feed rate and 3.6% in benzene concentration. In naphthalene, 2.5 in S/C ratio, 1 $kWh/m^3$ in SEI, 18.4 L/min in total gas feed rate and 1% in naphthalene concentration. The benzene decomposition efficiency was 95%, and the energy efficiency was 120 g/kWh. The naphthalene decomposition efficiency was 79%, and the energy yield was 68 g/kWh.

• Archives of Pharmacal Research
• /
• v.9 no.3
• /
• pp.131-138
• /
• 1986

A specific and sensitive gas chromatographic (GC) procedure with the flame photometric detector (FPD) was developed for determination of barbiturates such as barbital, allobarbital, secobarbital, phenobarbital and thiopental in plasma. In order to evaluate the performance of the FPD, the results were campared with those of the flame ionization detector (FID). After extraction of barbiturates from plasma, the barbiturates were quantitatively N, N-dimethylthiometyl (MTM)-derivatized with methylthiomethyl chloride in 1, 8-diazabicyclo [5, 4, 0] undec-7-ene catalyst. The data indicate that the FPD is about 4 times more sensitive than the FID for barbiturates, although it is less reproducible. The FPD also produced chromatogram with less back ground for extracted plasma sample. The FPD also produced chromatogram with less background for extracted plasma sample. The minimum detectable amount of MTM-thiopental on 3% OV-225 column was 4, 4fmol and that of other MTM-barbiturate was about 10.0fmol.

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.8
• /
• pp.51-56
• /
• 2008

Aluminum foam material has unique properties that make them useful in applications to the automobile, construction and railroad industries. In this study, aluminum was plasma-treated using nitrogen gas to improve fracture behavior between aluminum and aluminum foam material. SLS specimens were used for fracture tests. They were performed using plasma-treated and untreated aluminum/aluminum foam specimens. It was shown that the fracture strength and the tincture toughness of aluminum/aluminum foam were improved ${\sim}86%\;and\;{\sim}250%$, respectively when the aluminum was plasma-treated using nitrogen gas.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.153-156
• /
• 2008

The use of high Xe content gas is a powerful method for improving the discharge efficacy in PDP, but the accompanying high driving voltage prevents it from being used aggressively. In this paper, we tried to find a method to lower the driving voltage under high Xe gas condition with a new protecting layer. The effective secondary electron emission caused by Xe ions can result in the low voltage driving in panels with high Xe content gas and more importantly high luminous efficacy which were confirmed with the computer simulation and panel experiment.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.690-693
• /
• 2003

An Si substrate (100) was oxidized at $400^{\circ}C$ in inductively coupled oxygen plasma. Interstitial oxygen was found in the Si substrate at the initial stage of oxidation by IR measurements. An x-ray rocking curve of Si substrates showed a lower peak intensity due to lattice distortion by the interstitial oxygen. The refractive index of thin oxides, below which interstitial oxygen existed in the Si substrate, was smaller than the refractive index of thick oxides, below which no interstitial oxygen existed. The interstitial oxygen was found by plasma oxidation using $O_{2}$ gas and $N_{2}O$ gas. The inductively coupled plasma oxidation using $N_{2}O$ gas was performed by atomic oxygen, not by molecular oxygen, indicating that atomic oxygen in plasma is responsible for the incorporation of interstitial oxygen.

• Journal of Surface Science and Engineering
• /
• v.41 no.6
• /
• pp.279-286
• /
• 2008

Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.