• Title/Summary/Keyword: Gas Density

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Analysis of the cause of dose delivery errors due to changes in abdominal gas volume during MRgART pancreatic cancer (췌장암 MRgART시 복부가스용적 변화에 의한 선량전달오류 원인 분석)

  • Ha, Min Yong;Son, Sang Jun;Kim, Chan Yong;Lee, Je Hee
    • The Journal of Korean Society for Radiation Therapy
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    • v.32
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    • pp.73-83
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    • 2020
  • Purpose: The purpose of this study is to confirm the matching of the electron density between tissue and gas due to variation of abdominal gas volume in MRgART (Magnetic Resonance-guided Adaptive Radiation Therapy) for pancreatic cancer patients, and to confirm the effect on the dose change and treatment time. Materials and Methods: We compared the PTV and OAR doses of the initial plan and the AGC(Abdominal gas correction) plans to one pancreatic cancer patient who treated with MRgART using the ViewRay MRIdian System (Viewray, USA) at this clinic. In the 4fx AGC plans, Beam ON(%) according to the patient's motion error was checked to confirm the effect of abdominal gas volume on treatment time. Results: Comparing the Initial plan with the average value of AGC plan, the dose difference was -7 to 0.1% in OAR and decreased by 0.16% on average, and in PTV, the dose decreased by 4.5% to 5.5% and decreased by 5.1% on average. In Adaptive treatment, as the abdominal gas volume increased, the Beam ON(%) decreased. Conclusion: Abdominal gas volume variation causes dose change due to inaccurate electron density matching between tissue and gas. In addition, if the abdominal gas volume increases, the Beam ON(%) decreases, and the treatment time may increase due to the motion error of the patient. Therefore, in MRgART, it is necessary to check the electron density matching and minimize the variability of the abdominal gas.

Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET

  • Lee, Jung-Yeon;Park, Bong-Ryeol;Lee, Jae-Gil;Lim, Jongtae;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.16-21
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    • 2015
  • In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

Characterization of Nitrogen Gas Crossover in PEM Fuel Cell Stacks (고분자 연료전지 스택에서 질소 크로스오버 특성에 관한 연구)

  • Baik, Kyung-Don;Kim, Min-Soo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.33 no.3
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    • pp.207-214
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    • 2009
  • Crossover of nitrogen from cathode to anode is inevitable in typical membranes used in PEM fuel cells. This crossovered nitrogen normally accumulates in the hydrogen recirculation system at anode side channels. Excessive buildup of nitrogen in the anode side lowers the relative hydrogen concentration and finally affects the performance of fuel cell stack. So it is very important to analysis the nitrogen gas crossover at various operating conditions. In this study, characterization of nitrogen gas crossover in PEM fuel cell stack was investigated. The mass spectroscopy (MS) has been applied to measure the amount of the crossovered nitrogen gas at the anode exit. Results show that nitrogen gas crossover rate was affected by current density, anode and cathode stoichiometric ratio and operating pressure. Current density, anode stoichiometric ratio and anode operating pressure do not affect nitrogen crossover rate but anode exit concentration of nitrogen. Cathode pressure and stoichiometric ratio largely affect the nitrogen crossover rate.

EFFECT OF SUBSTRATE BIAS ON THE DIAMOND GROWTH USING MICROWAVE PLASMA CVD

  • Sakamoto, Yukihiro;Takaya, Matsufumi
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.303-306
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    • 1999
  • On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

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Electron Density Measurement of Inductively Coupled Plasma by Ar Gas Pressure (Ar 가스 압력에 따른 유도결합형 플라즈마의 전자 밀도 측정)

  • 이영환;김광수;조주웅;박대희
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.11
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    • pp.508-511
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    • 2003
  • In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of argon gas pressure. The RF output was applied in the range of 5 ∼ 50 (W) at 13.56 (MHz). The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100 (V) ∼+100 (V). When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from l0W to 30 〔W〕. Also, when the RF power was increased, electron density was increase. This implies that this method can be used to find an optimal RF rower for efficient light illumination in an electrodeless fluorescent lamp.

Applications of Plasma Modeling for Semiconductor Industry

  • Efremov, Alexandre
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.3-6
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    • 2002
  • Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure, flow rate, input power density) and various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimization.

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A Study on the Reactor Design of Solid-Solid-Gas Chemical Heat Pump System (고체-고체-기체 화학 열펌프 시스템의 반응기 설계에 관한 연구)

  • Kim, S.J.;Lee, T.H.;Neveu, P.;Choi, H.K.;Lee, J.H.
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.6 no.4
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    • pp.406-416
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    • 1994
  • In this study the reactor design procedure and method of solid-solid-gas chemical heat pump system using STELF technology were investigated. For manufacturing IMPEX block which is the kernel of reactor, proper salt pair should be selected, and equilibrium temperature drop and COP should be examined for selected salt pair. Moreover, apparent density, residual porosity, and graphite ratio should be calculated to give minimum block volume and mass, and maximum energy density without causing heat and mass transfer problems. Since heat exchange area can be changed with operating condition, reactor diameter, length, and stainless steel thickness should be decided for desired specifications. These procedure and method were applied to the case study of 6kW cold production and 8 hours storage capacity reactor.

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Quantum Mechanical Calculation of Two-Dimensional Electron Gas Density in AlGaAs/GaAs/AlGaAs Double-Heterojunction HEMT Structures (AlGaAs/GaAs/AlGaAs 이중 이종집합 HEMT 구조에서의 2차원 전자개스 농도의 양자역학적 계산)

  • 윤경식;이정일;강광남
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.3
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    • pp.59-65
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    • 1992
  • In this paper, the Numerov method is applied to solve the Schroedinger equation for $Al_{0.3}Ga_{0.7}AS/GaAs/Al_{0.3}Ga_{0.7}As$ double-heterojunction HEMT structures. The 3 subband energy levels, corresponding wave functions, 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. In addition, 2-dimensional electron gas densities in a quantum well of double heterostructure are calculated as a function of applied gate voltage. The density in the double heterojunction quantum well is increased to about more than 90%, however, the transconductance of the double heterostructure HEMT is not improved compared to that of the single heterostructure HEMT. Thus, double-heterojunction structures are expected to be suitable to increase the current capability in a HEMT device or a power HEMT structure.

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Numerical studied on consequenses of the ion pumping effect in helicon plasmas (헬리콘 플라즈마에서 이온 펌핑 효과의 영향에 대한 수치적 해석 연구)

  • 조수원;박인호;최성을;권명회
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.353-360
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    • 1999
  • The global balance model is applied to investigate the transient behavior of the electron density and temperature in helicon plasmas. The power absorption calculated from the solutions of the Maxwell equations is used in solving the power balance equation. A balance model for the neutral gas is also considered to fins its density self-consistently. It is turned out that the numerical results reasonably explain consequences of the ion pumping effect including the occurrence of two distinct modes of pulsed helicon discharge which have been observed experimentally. The behavior of the discharge parameters are fond to be primarily dependent on the power absorption and the gas flow rate, but the pressure controls the electron density and temperature of the final steady state as well as the transient state even with the same flow rate. Finally, it is shown that the electron density virtually the linear relationship between the density and the magnetic field is retained for a higher pressure when the effect of the ion pumping is negligible.

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Distribution of Deposited Carbon in Carbon Brake Disc Made by Pressure-Gradient Chemical Vapor Infiltration

  • Chen, Jianxun;Xiong, Xiang
    • Carbon letters
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    • v.8 no.1
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    • pp.25-29
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    • 2007
  • The carbon brake discs were manufactured by densification the carbon fiber preform using PG-CVI technology with Propene as a carbon precursor gas and Nitrogen as a carrier gas. The densities of carbon brake discs were tested at different densification time. The results indicate that the densification rate is more rapid before 100 hrs than after 200 hrs. The CTscanning image and the SEM technology were used to observe the inner subtle structure. CT-images show the density distribution in the carbon brake disc clearly. The carbon brake disk made by PG-CVI is not very uniform. There is a density gradient in the bulk. The high-density part in the carbon brake is really located in the friction surface, especially in the part of inner circle. This density distribution is most suitable for the stator disc.