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The Future of Countermobility Capability with a Literature Analysis from FASCAM to Terrain Shaping Obstacle(TSO) (미래 대기동 작전 능력의 발전방안 연구 -살포식지뢰(FASCAM)로부터 지형 조성 장애물(TSO) 전력을 중심으로-)

  • Park, Byoung-Ho;Sim, Jaeseong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.6
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    • pp.291-298
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    • 2021
  • In this study, the future of countermobility capability is presented by analyzing the status of the countermobility obstacles focusing on the history of landmines and munitions. The conventional landmine was forbidden globally by the CCW and Ottawa Treaty because it caused civilian damage after the war. Because the inhumanity of those mines had been acknowledged, shatterable mines with a self-destruct (SD) function and M93 "HORNET" anti-tank munition with enhanced sensors have been fielded. In 2016, the Obama administration announced a policy that banned all antipersonnel landmines, leaving a considerable gap in the countermobility capability. To deal with these problems, the developments of "SAVO" and the SLEP program of Volcano mines were conducted. In the sense of a long-term approach, the countermobility obstacles, including mines, were chosen as fundamental forces for Multi-Domain Operations and were improved to Terrain Shaping Obstacles (TSO). TSO has improved sensors and mobility kill capabilities and features an enhanced remote control over each munition on the battlefield through a network established with satellite communication. The combined arms countermobility might be fully capable until 2050 if the TSO program can be completed successfully.

Application of CFD to Design Procedure of Ammonia Injection System in DeNOx Facilities in a Coal-Fired Power Plant (석탄화력 발전소 탈질설비의 암모니아 분사시스템 설계를 위한 CFD 기법 적용에 관한 연구)

  • Kim, Min-Kyu;Kim, Byeong-Seok;Chung, Hee-Taeg
    • Clean Technology
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    • v.27 no.1
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    • pp.61-68
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    • 2021
  • Selective catalytic reduction (SCR) is widely used as a method of removing nitrogen oxide in large-capacity thermal power generation systems. Uniform mixing of the injected ammonia and the inlet flue gas is very important to the performance of the denitrification reduction process in the catalyst bed. In the present study, a computational analysis technique was applied to the ammonia injection system design process of a denitrification facility. The applied model is the denitrification facility of an 800 MW class coal-fired power plant currently in operation. The flow field to be solved ranges from the inlet of the ammonia injection system to the end of the catalyst bed. The flow was analyzed in the two-dimensional domain assuming incompressible. The steady-state turbulent flow was solved with the commercial software named ANSYS-Fluent. The nozzle arrangement gap and injection flow rate in the ammonia injection system were chosen as the design parameters. A total of four (4) cases were simulated and compared. The root mean square of the NH3/NO molar ratio at the inlet of the catalyst layer was chosen as the optimization parameter and the design of the experiment was used as the base of the optimization algorithm. The case where the nozzle pitch and flow rate were adjusted at the same time was the best in terms of flow uniformity.

Characteristics of Sn-doped β-Ga2O3 single crystals grown by EFG method (EFG 법으로 성장한 β-Ga2O3 단결정의 Sn 도핑 특성 연구)

  • Tae-Wan Je;Su-Bin Park;Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Yeon-Suk Jang;Won-Jae Lee;Yun-Gon Moon;Jin-Ki Kang;Yun-Ji Shin;Si-Yong Bae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.2
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    • pp.83-90
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    • 2023
  • The β-Ga2O3 has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga2O3 has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga2O3 single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga2O3 single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga2O3 were prepared by adding different mole ratios of SnO2 powder to Ga2O3 powder, and β-Ga2O3 single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga2O3 single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga2O3 single crystal according to the Sn doping were extensively investigated.