• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Journal of Radiation Protection and Research
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• v.10 no.2
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• pp.96-108
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• 1985

A study for the assessment of natural environmental radiation exposure at a flat and open field of about $10,000m^2$ in area in CNU Daeduk campus has been carried out by means of gamma-ray scintillation spectrometry and thermoluminescence dosimetry for one year period of time from October 1984. The detectors used were 3'${\phi}{\times}$3' NaI(T1) and two different types of LiF TLD, namely, chip sealed in plastic sheet which tightly pressed on two open holes of a metal plate and Teflon disk. Three 24-hour cycles of in-situ spectrometry, and two 3-month and one 1-month cycles of field TL dosimetry were performed. All the spectra measured were converted into exposure rate by means of G(E) opertaion, and therefrom exposure rate due to terrestrial component of environmental radiation was figured out. Exposure rate determined by the spectrometry was, on average, $(10.54{\pm}2.96){\mu}R/hr$, and the rates of $(12.0{\pm}3.4){\mu}R/hr$ and $(11.0{\pm}3.6){\mu}R/hr$ were obtained from chip and disk TLD, respectively. Fluctuations in diurnal variation of the exposure rate measured by the spectrometry were noticeable sometime even in a single cycle of 24 hours. It is concluded that appropriately combined use of TLD with iu-sitn gamma-ray spectrometry system can give more accurate and precise measure of environmental radiation exposure, and further study for more adequate and sensitive TLD for environmental dosimetry, including improvement and elevation of accuracy in data assessment through inter-laboratory or international intercomparison is necessary.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.35-40
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• 1985

The composition of the base glass was determined to be $Na_2O$ 15, $Fe_2O_3$ 35, $B_2O_3$ 0~20, $P_2O_5$ 30~50 by mole percent. The heating temperature for nucleation was determined by means of thermal expansion curve. Crystalline phases were investigated by X-ray diffraction method and I.R Spectra. Electrical conductivities of glass spec-imens were observed in the temperature range 25~20$0^{\circ}C$ The activation energies of these specimens were caculated. The results obtained were as follows : 1) The limit composition of the melts 15mol% $Na_2O$ 35mole% $Fe_2O_5$ 20mole% $B_2O_3$ 30mole% $P_2O_5$ was able to be formed into desired shapes during cooling, . 2) In the measurement of d. c conductivity($\delta$) on the glasses in the system $15Na_2O-35Fe_2O_3$-$B_2O_3$-(50-x) $P_2O_5$ the values decreased by replacing 5 mole% $P_2O_5$ with $B_2O_3$ 3) The d. c conducties of heat treated samples were increased by replacing $P_2O_5$ with $B_2O_3$ 4) $B_2O_3$ contributed to precipitate crystals such as${\gamma}$-$Fe_2O_3$ $Fe_3O_4$ which had the advantage of electronic conduction in heat treated samples. 5) The slope plotted Log($\delta$) versus 1/T in this glass system was linear in the measured temperature range.

• Journal of Magnetics
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• v.15 no.4
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• pp.179-184
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• 2010

We have investigated the effects of post annealing on iron oxide nanoparticles synthesized by the novel hydrothermal synthesis method with the $FeSO_4{\cdot}7H_2O$. To investigate the post annealing effect, the as-synthesized iron oxide nanoparticles were annealed at different temperatures in a vacuum chamber. The morphological, structural and magnetic properties of the iron oxide nanoparticles were investigated with high resolution X-ray powder diffraction (XRD), high resolution transmission electron microscopy (HRTEM), Mossbauer spectroscopy, and vibrating sample magnetometer analysis. According to the XRD and HRTEM analysis results, as-synthesized iron oxide nanoparticles were only magnetite ($Fe_3O_4$) phase with face-centered cubic structure but post annealed iron oxide nanoparticles at $700^{\circ}C$ were mainly magnetite phase with trivial maghemite ($\gamma-Fe_2O_3$) phase which was induced in the post annealing treatment. The crystallinity of the iron oxide nanoparticles is enhanced by the post annealing treatment. The particle size of the as-synthesized iron oxide nanoparticles was about 5 nm and the particle shape was almost spherical. But the particle size of the post annealed iron oxide nanoparticles at $700^{\circ}C$ was around 25 nm and the particle shape was spherical and irregular. The as-synthesized iron oxide nanoparticles showed superparamagnetic behavior, but post annealed iron oxide nanoparticles at $700^{\circ}C$ did not show superparamagnetic behavior due to the increase of particle size by post annealing treatment. The saturation of magnetization of the as-synthesized nanoparticles, post annealed nanoparticles at $500^{\circ}C$, and post annealed nanoparticles at $700^{\circ}C$ was found to be 3.7 emu/g, 6.1 emu/g, and 7.5 emu/g, respectively. The much smaller saturation magnetization value than one of bulk magnetite can be attributed to spin disorder and/or spin canting, spin pinning at the nanoparticle surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.230-230
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• 2010

유기물 반도체 화합물인 Cu-Pc(copper(II)-phthalocyanine)는 우수한 전기적 광학적 특성을 가지며, OLED, MISFET등 소자로서의 활용도가 높다. Cu-Pc 화합물은 $\alpha$-phase, $\beta$-phase, $\gamma$-phase를 포함하는 여러 가지 다결정 polymer로 존재할 수 있다. 가장 잘 알려진 구조로는 열적으로 준안정적인 $\alpha$-phase와 열적으로 안정적인 $\beta$-phase가 있다. Cu-Pc 박막의 구조 및 흡수 특성과 전기적 특성에 대한 기술이 확실히 규명되지 않아 본 연구에서는 두께와 열처리 조건에 따른 결정성 및 방향성을 조사하기 위하여 $\alpha$-phase와 $\beta$-phase의 phase transition 현상 및 전기적 광학적 특성을 규명 하고자 한다. 진공증착 방법 중 하나인 PVD 방법의 thermal evaporation deposition을 이용하여 glass, ITO 기판위에 두께와 열처리에 따른 전기적?광학적 특성을 연구하였다. Cu-Pc 박막의 성장두께는 5nm~50nm 이내로 fluxmeter 및 thickness monitor를 이용하여 제어하였다. 5nm~50nm의 두께에 따른 기판온도를 $200^{\circ}C$로 고정하여 전열 처리 및 후열 처리하여 온도에 따른 박막을 성장한 후, 결정 구조 및 특성 변화와 phase transition 분석하였다. 제작된 Cu-Pc의 박막은 $\alpha$-phase와 $\beta$-phase로 구분할 수 있으며, 열처리에 따른 phase transition 현상이 뚜렷함을 알 수 있다. XRD(X-ray diffraction)를 통하여 박막에 대한 결정 구조 분석 및 FE-SEM(field emission scanning electron microscopy)와 AFM(atomic force microscopy)을 이용하여 Cu-Pc 박막의 구조적 결정성과 방향성 등, 표면 상태와 형상구조에 대해 표면의 특성을 측정하며, 광 흡수도(UV-visible absorption spectra)을 이용하여 phase transition 현상에 따른 I-V 특성을 비교분석 하였다.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.18 no.2
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• pp.43-49
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• 2022

The purpose of this study is to evaluate the radiation effect on damage when the external shield of the spent nuclear fuel transport cask is damaged due to impact as the cause of an unexpected accident. The neutron and gamma-ray intensities and spectra are calculated using the ORIGEN-Arp module in the SCALE 6.2.4 code package⁽¹⁾ and then using MCNP6.2⁽²⁾ code calculate the dose rate. In order to evaluate the radiation dose according to the size of damage caused by external impact, various sized holes of 0.3~13.7% are assumed in the outer shield of the cask to evaluate the sensitivity to the dose. In the case of radiation source leakage, damage to the nuclear fuel assembly is assumed to be up to 6% based on overseas test cases. When only the outer shield is damaged, the maximum surface dose is calculated as 3.12E+03 mSv/hr. However, if the radiation source is leaked due to damage to the nuclear fuel assembly, it becomes 7.00E+05 mSv/hr which is about 200 times greater than the former case.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Food Science and Preservation
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• v.16 no.3
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• pp.385-391
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• 2009

Analytical electron spin resonance (ESR) parameters were investigated in irradiated seasonings after exposure to different radiation sources. Two commercial seasonings (SS-1 and SS-2) were irradiated with 0.20 kGy under ambient conditions using a $^{60}Co$ gamma-ray irradiator or an electron beam accelerator. Crystalline sugar-induced multi-component signals with g-values of 2.031, 2.021, 2.017, 2.009, 2.002, 1.990, and 1.980 were observed in both irradiated samples, whereas singlet signals were detected in non-irradiated materials, thereby distinguishing irradiated from control samples. Under the same analytical conditions, the ESR signal intensity of electron beam-irradiated samples was greater than that of gamma-irradiated materials. Determination coefficients (R2 values) between irradiation doses and corresponding ESR responses were 0.9916-0.9973 for all samples, and the magnetic field of specified g-values for irradiated samples remained constant. The predominant ESR signals of g2 (2.021), g4 (2.009), g5 (2.002), and g6 (1.990) showed high correlations with the corresponding irradiation doses (R2=0.8243 - 0.9929).