• 한국방사선학회논문지
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• 제15권2호
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• pp.257-263
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• 2021

본 연구는 한국원자력연구원에서 보유하고 있는 100 MeV 선형가속기를 사용하여 천연텅스텐과의 핵반응으로 부터 발생시켜 발생되는 감마선을 측정하여 natW(p,xn)176Re 핵반응에 대한 상대핵반응단면적을 도출하였다. 일반적으로 반감기가 짧은 동위원소에 대한 연구는 항상 짧은 시간 내에 방사능의 강도가 급격하게 작아지는 경향을 보이기 때문에 측정자체가 매우 어려운 것이 현실이다. 특히 176Re의 경우는 반감기가 5.3 분으로 상대적으로 매우 짧은 방사성핵종 중의 하나이다. 본 연구에서는 이런 짧은 반감기를 가지는 176Re 동위원소로부터 발생되는 109.08 keV 감마선을 고순도 Ge검출기를 이용하여 측정하였다. 얻어진 상대 측정값들은 1967년에 Richard G.에 의해 발표된 8 ~ 14 MeV 양성자에너지 영역에서의 결과와 이를 기반으로 계산에 의한 핵반응단면적에 대한 평가한 2019년 A. J. Koning의 결과인 TENDL-2019값과 비교분석하였다. 이 연구의 결과는 미래의 에너지원으로 알려져 있는 핵융합로의 설계, 천체 물리학, 핵의학 및 양성자치료 분야에 요긴하게 활용될 것으로 생각된다.

• Journal of Radiation Protection and Research
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• 제10권2호
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• pp.96-108
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• 1985

감마선분광분석 및 열형광선량측정법에 의한 자연환경방사선의 선량해석에 관한 연구를 1984년 10월부터 약 1년간에 걸쳐 충남대학교 대덕캠퍼스내의 1만 $m^2$ 규모의 평면개활지에서 수행하였다. 이 연구에서 사용한 검출기는 3'${\phi}{\times}$3' NaI(T1) 섬광계수기(閃光計數器)와 plastic 에 밀봉하여 금속판에 압착 처리한 chip 과 Teflon-disk 로된 2종의 LiF TLD 였다. 실측실험으로는 3회에 걸친 24시간 cycle의 in-situ spectrometry 와 2회의 3개월 cycle 과 1회의 1개월 cycle에 걸친 TLD field dosimetry를 수행하였다. 측정한 모든 spectrum은 G(E)연산자법에 의하여 조사선량율(照射線量率)로 환산하였고 그 결과로부터 환경 방사선의 지설성분(地設成分)을 산출하였다. 결과(結果)에 의하면 spectrometry로 구한 조사선량율이 평균 $(10.54{\pm}2.96){\mu}R/hr$, TLD chip으로 측정해석한 값은 $(12.0{\pm}3.4){\mu}R/hr$, disk에서 얻은 값이 $(11.0{\pm}3.6){\mu}R/hr$로 오차범위 안에서 매우 좋은 일치를 보이고 있다. 그러나 감마선분광분석에 의한 자연방사선의 일변화(日變化)에는 가끔 심한동요가 관측되었다. 정확한 환경방사선량해석을 위하여 감마선분광분석과 TLD의 적절한 동시 배합사용이 바람직 하며, 보다 고감도의 TLD에 관한 연구와 국제비교등을 통한 선량평가의 정도향상(精度向上)을 위한 보다 깊이 있는 연구가 필요하다는 결론(結論)에 도달하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.282-285
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• 2003

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410\;^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}\;and\;295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}eV/K)T^2/(T\;+\;155\;K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 센서학회지
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• 제15권6호
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• pp.397-405
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• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• 한국재료학회지
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• 제20권3호
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• pp.132-136
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• 2010

This study examined the biostability and drug delivery efficiency of g-$Fe_2O_3$ magnetic nanoparticles (GMNs) by cytotoxicity tests using various tumor cell lines and normal cell lines. The GMNs, approximately 20 nm in diameter, were prepared using a chemical coprecipitation technique, and coated with two surfactants to obtain a water-based product. The particle size of the GMNs loaded on hangamdan drugs (HGMNs) measured 20-50 nm in diameter. The characteristics of the particles were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-TEM) and Raman spectrometer. The Raman spectrum of the GMNs showed three broad bands at 274, 612 and $771\;cm^1$. A 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide (MTT) assay showed that the GMNs were non-toxic against human brain cancer cells (SH-SY5Y, T98), human cervical cancer cells (Hela, Siha), human liver cancer cells (HepG2), breast cancer cells (MCF-7), colon cancer cells (CaCO2), human neural stem cells (F3), adult mencenchymal stem cells (B10), human kidney stem cells (HEK293 cell), human prostate cancer (Du 145, PC3) and normal human fibroblasts (HS 68) tested. However, HGMNs were cytotoxic at 69.99% against the DU145 prostate cancer cell, and at 34.37% in the Hela cell. These results indicate that the GMNs were biostable and the HGMNs served as effective drug delivery vehicles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Bulletin of the Korean Chemical Society
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• 제9권6호
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• pp.345-349
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• 1988

The polycrystalline powder of (CaLa) (MgMo)$O_6$ has been prepared at $1350^{\circ}C$ in $H_2/H_2O$ and $N_2$ flowing atmosphere. The powder X-ray diffraction pattern indicates that (CaLa) (MgMo)$O_6$ has a monoclinic perovskite structure with the lattice constants $a_0=b_0=7.901(1){\AA}$, $c =7.875(1){\AA}\;and\;{\gamma}=89^{\circ}$16'(1'), which can be reduced to orthorhombic unit cell, a = 5.551(1) ${\AA}$, b = 5.622(1) ${\AA}$ and c = 7.875(1) ${\AA}$. The infrared spectrum shows two strong absorption bands with their maxima at 590($ν_3$) and 380($ν_4$) cm, which are attributed to $2T_{1u}$ modes indicating the existence of highly charged molybdenum octahedron $MoO_6$ in the crystal lattice. According to the magnetic susceptibility measurement, the compound follows the Curie-Weiss law below room temperature with the effective magnetic moment 1.83(1)$_{{\mu}B}$, which is well consistent with that of spin only value (1.73 $_{\mu}_B$) for $Mo^{5+}$ with $4d^1$-electronic configuration within the limit of experimental error. From the thermogravimetric analysis, it has been confirmed that (CaLa) (MgMo)$O_6$ decomposes gradually into $CaMoO_4,\;MoO_3,\;MgO,\;La_2O_3$ and unidentified phases due to the oxidation of $Mo^{5+}$ to $Mo^{6+}$.

• 센서학회지
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• 제12권1호
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• pp.1-9
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• 2003

CsI에 활성제로 Li, K, Rb를 첨가하여 CsI(Li), CsI(K) 및 CsI(Rb) 단결정을 Czochralski방법으로 육성하였다. $^{137}CS$(0.662 MeV)에 대한 CsI(Li:0.2 mole%) 섬광체의 에너지 분해능은 14.5%이었고 CsI(K:0.5 mole%) 섬광체는 15.9%이었으며 CsI(Rb:1.5 mole%) 섬광체는 17.0%이였다. 이들 CsI(Li), CsI(K) 및 CsI(Rb) 섬광체의 $\gamma$선 에너지에 대한 에너지 교정곡선은 선형적 이였다. 일정비율 시간분석법(CFT :constant-fraction timing method)으로 측정한 CsI(Li:0.2 mole%), CsI(K:0.5 mole%) 및 CsI(Rb:1.5 mole%) 성광체의 시간 분해능은 각각 9.0 ns, 14.7 ns 및 9.7 ns이였다. CsI(Li:0.2 mole%), CsI(K:0.5 mole%) 및 CsI(Rb:1.5 mole%) 섬광체의 형광감쇠시간은 각각 ${\tau}_1=41.2\;ns$, ${\tau}_2=483\;ns$, ${\tau}_1=47.2\;ns$, ${\tau}_2=417\;ns$ 및 ${\tau}_1=41.3\;ns$ 및 ${\tau}_2=553\;ns$이였다. 그리고 CsI(Li:0.2 mole%), CsI(K:0.5 mole%) 및 CsI(Rb:1.5 mole%) 단결정의 인광감쇠시간은 각각 0.51 s, 0.57 s 및 0.56 s이였다.