• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1814-1818
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• 1989

The crystals of ZnGa2S4 and ZnGa2S4:Co(2mole%) were synthesized from high-purity (99.999%) elements of Zinc, Gallium, and sulfur. The crystal structure of these crystals belong to a tetragonal system with layer type and the lattice constants are a =5.35\ulcorner c=10.43\ulcornerfor ZnGa2S4: Co(2 mole%) crystal at 298\ulcorner. The optical absorption spectra of these compounds were obtained through reflectance measurements using a 60 mm diameter intergrating sphere. The optical energy gaps are 3.18eV for ZnGa2S4 and 2.60eVfor ZnGa2S4:L Co(2mole%)at 298\ulcorner, respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.105-109
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• 1998

Langasite({{{{ { La}_{ 3} {Ga }_{5 } {SiO }_{14 } , LGS}}}}) powder was prepared by a polymerized complex method based on the Pechini-type reaction. A mixed solution of ethylene glycol(EG), cotric acid(CA), lanthanum, gallium and silicon ions, with a molar ratio of EG:CA:La:Ga:Si=100:25:3:5:1, was polymerzed to from a transparent resin, which was used as a precursor for the synthesis of LGS. X-ray diffraction(XRD) patterns indicated that the LGS phase could be formed by the heat-treatment in air at 1000$^{\circ}C$ for 3hrs

• Journal of Information Display
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• v.11 no.4
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• pp.160-164
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• 2010

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.119-122
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• 2008

In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

• Proceedings of the KIPE Conference
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• 2015.11a
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• pp.5-6
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• 2015

본 논문은 GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) 소자의 동작 특성과 Normally-off형 p-GaN 및 cascode-GaN 소자의 구현 방식에 따른 차이점을 분석한다. 두 소자의 차이점에 따른 동작 특성을 비교하고 게이트 구동 시 고려되어야 할 설계 요소를 분석한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1351-1354
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• 2006

In this paper, we study the effect of substrate temperature on property of Ga doped ZnO (GZO) thin film for transparent conductive oxide (TCO).GZO thin films have been deposited on corning glass 1737 by D.C. magnetron sputtering. We investigated the structural and electrical properties of GZO films using the X-Ray Diffractometer(XRD), Field Emission Scanning Electron Microscopy(FESEM) and 4-points probe .

• 전기의세계
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• v.20 no.2
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.33-36
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• 2004

탄소 도핑$(5{\times}10^{19}\;cm^{-3})$된 p-type GaAsSb 에피층 위에, Ti/Pt/Au, Pd/Au, Pd/Ir/Au를 이용한 다층 오믹 접촉을 제작하였다. MOCVD(metal-organic chemical vapor deposition)를 이용하여 성장시킨 이 p-GaAsSb의 정공 이동도는 탄소의 도핑 농도가 매우 높음에도 불구하고, $50\;cm^2/Vs$로 측정되었다. 오믹 접촉의 전기적 특성을 측정하기 위하여 TLM(Transfer length method)를 이용하였다. Pd/Ir/Au을 이용한 오믹접촉의 specific contact resistivity는 $10^{-8}\;ohm-cm^2$ 보다 작은 수치를, transfer length는 100 nm보다 작은 수치를 보였으며, Ti/Pt/Au을 이용한 ohmic contact의 specific contact resistivity는 $10^{-7|\;ohm-cm^2$ 보다 작은 수치를, transfer length는 400 nm보다 작은 수치를 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.4-4
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• 2010

Single-crystalline IGZO (Indium-Gallium-Zinc oxide) was fabricated on c-sapphire substrate. Single crystal ZnO was used as a buffer layer, and post-annealing was treated in $900^{\circ}C$ for crystallization of IGZO. Crystallized IGZO formed superlattice structure spontaneously induced to c-axis direction by ZnO butTer layer, the composition of IGZO was varied by amount of ZnO. Crystallinity and composition of IGZO was analyzed by X-ray Diffraction and Transmission Electron Microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.