• Bulletin of the Korean Chemical Society
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• v.26 no.2
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• pp.343-344
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• 2005

• Resources Recycling
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• v.2 no.4
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• pp.27-32
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• 1993

A process has been studied to recover gallium from steelmaking dust which had several hundreds ppm of gallium. Aqueous solution containing 38 mg/l gallium was obtained by leaching of dust with 2.25 mol/l sulfuric acid. The leach liquor contained iron and zinc about 1,000 times greater than gallium. Gallium was then concentrated by ion exchanger of chelating resin with functional group of amino carboxylic acid after reduction of ferric ion to ferrous ion and pH adjustment. Gallium was concentrated to be 13 g/l in the resulting eluate by double ion exchanges. The liquor was further treated to remove impurities by solvent extraction technique empolying TOMAC as extractant. The galluim with 99% purity was finally obtainable.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.157-161
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• 2006

InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and $NH_3$ gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between $NH_3$ and indium-gallium chloride farmed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.