• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.375-378
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• 2004

In this paper, we fabricated pantacene TFTs using PVP copolymer and cross-linked PVP as gate insulator on glass and plastic (PET) substrate. Depending on the density of PVP and poly (melamine-co-formaldehyde) the performance has been changed. We obtained the best performance with the mobility of 0.12cm2/V sec and the on/off current ratio of $1.19{\times}10^6$ for the case of $10wt\%$ PVP copolymer mixed with $5wt\%$ poly(melamine-co-formaldehyde). Additionally using OTFTs with the above PVP gate insulator, we fabricated the integrated circuit including inverter which produced the gain of 5.56 on the glass substrate and gain of 9.7 on the plastic (PET) substrate. And the threshold voltage was respectively +8V and +14v$ldots$

• Journal of IKEEE
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• v.15 no.1
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• pp.37-42
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• 2011

In this paper, the high-voltage novel devices have been fabricated by 0.35 um BCD (Bipolar-CMOS-DMOS) process. Electrical characteristics of 20 V level BJT device, 30/60 V HV-CMOS, and 40/60 V LDMOS are analyzed. Also, the vertical/lateral BJT with the high-current gain and LIGBT with the high-voltage are proposed. In the experimental results, vertical/lateral BJT has breakdown voltage of 15 V and current gain of 100. The proposed LIGBT with the high-voltage has breakdown voltage of 195 V, threshold voltage of 1.5 V, and Vce, sat of 1.65 V.

• Journal of Korea Multimedia Society
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• v.7 no.2
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• pp.164-172
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• 2004

Halftoning of gray-scale image is a process to produce a binary image. The error diffusion halftoning method produces high qualify binary image but that has some defects such as sharpening and directional artifacts. We propose the threshold modulation to reduce such defects. The proposed algorithm uses thresholds reflecting local characteristic of image. We calculate thresholds which minimize errors of flat region of each gray-scale level by using a linear gain between original image and error-diffused image and then represent edge by compensating thresholds in proportion to edge information. The proposed method improves on halftone quality by minimizing an error which cause sharpening and directional artifact.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.7C
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• pp.907-914
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• 2004

In this paper, we propose an application of the receiver antenna switching to an conventional adaptive modulation system and derived the optimal antenna switching threshold of the system to maximize the average transmission bit rate and analyzed its performance. Also, we compare the performances of the presented scheme with those of an adaptive modulation using the antenna selection diversity and the one with a single antenna in terms of the average number of bits per symbol and the probability of no transmission. Performance comparison results show that the proposed system has an SNR gain of 1.4 dB over the adaptive modulation using a single antenna when the average number of bits per a symbol is two and yields an SNR gain of 6 dB for maintaining the probability of no transmission at the level of 0.1.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.222-226
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• 1992

The lasing characteristics of a Nd:phosphate glass laser pumped by 514 nm of an $Ar^{+}$ laser has been investigated. The oscillator consists of a Nd:glass gain medium set at Brewster angle, and two concave mirrors, and a flat mirror with a reflectance of 98%. The $Ar^{+}$ laser pumping beam is focused longitudinally at the beam waist of laser mode for efficient pumping. The pumping beam is chopped at 100 Hz to reduce the heat loading to prevent the thermal damage of the gain medium by the latent heat from the absorbed pumping beam. The maximum laser output power of 70 mW at 1.5 W pumping and the threshold input power of 520 mW have been obtained.

• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.434-441
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• 1993

Focusing geometry dependence of output Stokes energy in single pass methane Raman shifter is investigated. The experimental result shows that the threshold energy decreases as confocal parameter increases. This result can be explained by gain suppression caused by Stokes - anti-Stokes coupling. In this paper, we give simple analysis for the focusing geometry dependence of Stokes - anti-Stokes coupling and present the criterion of confocal parameter to reduce the gain suppression. Focusing geometry dependence of stimulated Brillouin scattering is measured and the result is in good agreement with theoretical prediction.

• Korean journal of applied entomology
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• v.48 no.2
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• pp.229-236
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• 2009

Cage experiments by artificial infestations with different initial densities of Frankliniella occidentalis were conducted to analyze damages and develop control thresholds of F. occidentalis on greenhouse eggplant in 2005 and on greenhouse sweet pepper in 2007. In the eggplant experiment, the infestations of F. occidentalis resulted in direct damage on fruit surface and non-marketable fruits which had several thin or thick lines or bleaching patches on the surface. F. occidentalis adults were frequently found on the flowers of eggplants, while nymphs were mainly observed on leaves. The fruit yield of eggplants was not significantly different among experimental plots with different initial density of F. occidentalis. Relationship between % non-marketable fruits among harvested fruits of eggplant and sticky trap catches of F. occidentalis (no. thrips/trap/week) at two weeks before the harvest showed a positive correlation. Using the estimated relationship, the control threshold of F. occidentalis on greenhouse eggplant was estimated at 10 adults per week at two weeks before the harvest when 5% of non-marketable fruit was applied for the gain threshold. In the experiment of sweet pepper, the direct damage by F. occidentalis was observed on the fruit surface and calyx, and the marketable grade of the damaged fruits decreased. The significant yield loss of marketable fruits was found in plots with high initial introduced-densities. There was a high relationship between thrips density and percentage of damaged fruits. Assuming 5% yield loss (non-marketable fruit) for the gain threshold, the control threshold of F. occidentalis on greenhouse sweet pepper was 4.8 adults per trap and 0.9 individuals per flower at two weeks before harvest.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.111-116
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• 1998

Thirteen InGaAs/InGaAsP separate-confinement heterostructure multiple quantum well lasers were designed such that the strain in the active layer from 0.9% compressive strain to 1.4% tensile, and their threshold current density was caluculated to see the effects of strain on the threshold current density. The well width was adjusted such that the bandgap of the quantum well is 1.55 ${\mu}{\textrm}{m}$, For the calculation of the band structure and transition matrix element needed for the gain calculation, a block diagonalized 8$\times$8 second-order $\to{k}.\to{p}$ Hamiltonian was used to incorporate the conduction band nonparabolicity and the valence band mixing. The threshold current density shows discontinuity at 0.4% tensile strain where the first heavy-hole subband and the first light-hole subband cross and at 0.5% tensile strain where the second conduction subband begins to exist. The threshold current density at room temperature has a maximum around these 0.4-0.5% tensile strains, and as strain varies in either direction it decreases first and then increases a little after a local minimum. This calculated trend is consistent with the other reported experimental results. We discussed the results of this calculation in comparison with other theoretical or experimental papers on the effect of strain.

• Korean journal of applied entomology
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• v.46 no.1 s.145
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• pp.63-69
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• 2007

This study was conducted to examine the problems that would arise in our cropping systems when introducing Gain Threshold (GT) which is an important element in determining Economic Injury Level (EIL). Cain Threshold (GT) can be defined as the amount of damage (=yield loss) to justify management, and calculated by dividing the management costs by the market crop price. GTs for some pests in rice, soybean, and greenhouse vegetable crops cultivation were estimated and also compared with those in foreign countries. GTs and percentage of yield loss equivalent to them were estimated to be 4.6-6.1kg/10a/season and 1.0-1.3% for brown planthopper, white-backed planthopper, rice water weevil, and sheath blight, whereas for rice blast in rice cultivation were 12.7kg/10a/season and 2.7%. In soybean cultivation, the values for bean bug were 6.2 kg/10a/season and 3.6%. GTs and percentage of yield loss estimated for melon thrips, whitefly, and downy mildew in cucumber cultivation were 10.0-12.6kg/10a/week, 1.4-1.7%, and the values for two spotted mite and gray mildew in strawberry cultivation were 3.1-3.5kg/10a/week, 1.3-1.5%, and the values for American leaf minor, whitefly, and gray mold in tomato were 8.4-9.7kg/10a/week, 1.7-1.9%. Overall GTs in our cropping systems were so low compared to those in foreign countries, which meant that the low GTs might yield the low EILs. Therefore, we could suggest that prior to direct introduction of GTs calculated from current cultivation systems in developing EILs it is necessary to seriously consider reasonable values of GTs or the yield loss equivalents to them.