• Title/Summary/Keyword: Gain Threshold

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LD gain-switching에 의한 초단 광 펄스 발생 해석 (Analysis of ultra-short optical pulse generation by LD gain-switching)

  • 김윤중;김동각;김창민
    • 전자공학회논문지D
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    • 제34D권10호
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    • pp.85-92
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    • 1997
  • For a InGaAsP buried - heterostructrue $1.3\mu\textrm{m}$ LD with fabry-perot cavity structure, the procedures of ultra-short optical pulse genration ar eanalyzed by simulating the rate equations. Investigting the effects of injected current pulse parameters such as bias $J_b$, pulse width $T_d$ and pulse amplitude $J_p$ on the generated optical pulses, we derive the optimum conditions to obtain a single optical pulse with strong peak value. We also observe that the repetition rate of current pulses needs to be restricted under a certain threshold to generate a train of single optical pulses, and that the period doubling phenomenon takes place by increasing the repitition rate.

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광대역 이득을 가진 SOA/DFB-SOA를 이용한 전광 논리구현 (All-optical Logic gate using the SOA/DFB-SOA with Broadband-Gain)

  • 김영일;김재헌;이석;우덕하;윤태훈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.109-111
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    • 2002
  • We have demonstrated all-opticalflip-flop based on optical bistability in a SOA/DFB-SOA with broadband gain. Input signal with the wavelength of 1340.23 nm or 1680.93 nm and the current of about 98% of the lasing threshold is injected into theDFB-SOA. Current injected into SOA is 80 mA All-optical flip-flop has various applications such as all-optical memory, demultiplexing, packet-header buffering, and retiming.

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액상결정성장에 의한 InGaAsP/InP MQW-ND 제작에 관한 연구 (A study on the InGaAsP/InP MQW-LD fabrication by the liquid phase epitaxy)

  • 조호성;홍창희;오종환;예병덕;이중기
    • 한국광학회지
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    • 제3권4호
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    • pp.252-257
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    • 1992
  • 본 연구에서는 수직형 LPE 장치를 이용하여 InGaAsP/InP MQW-DH웨이퍼를 성장하고 10$\mu$m stripe MQW-LD를 제작하였다. 공진기 길이 470$\mu$m LD의 경우 이득스펙트럼 중심파장은 1.32$\mu$m였다. 발전파장은 1.302$\mu$m로써 양자우물두께 300$\AA$의 이득중심에 해당한다는 사실을 알 수 있었다.

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Dead Pixel Detection Method by Different Response at Hot & Cold Images for Infrared Camera

  • Ye, Seong-Eun;Kim, Bo-Mee
    • 한국컴퓨터정보학회논문지
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    • 제23권11호
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    • pp.1-7
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    • 2018
  • In this paper, we propose soft dead pixels detection method by analysing different response at hot and cold images. Abnormal pixels are able to effect detecting a small target. It also makes confusing real target or not cause of changing target size. Almost exist abnormal pixels after image signal processing even if dead pixels are removed by dead pixel compensation are called soft dead pixels. They are showed defect in final image. So removing or compensating dead pixels are very important for detecting object. The key idea of this proposed method, detecting dead pixels, is that most of soft deads have different response characteristics between hot image and cold image. General infrared cameras do NUC to remove FPN. Working 2-reference NUC must be needed getting data, hot & cold images. The way which is proposed dead pixel detection is that we compare response, NUC gain, at each pixel about two different temperature images and find out dead pixels if the pixels exceed threshold about average gain of around pixels.

Impact of Gamma Irradiation Effects on IGBT and Design Parameter Considerations

  • Lho, Young-Hwan
    • ETRI Journal
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    • 제31권5호
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    • pp.604-606
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    • 2009
  • The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a $^{60}Co$ gamma-ray source are found in both of the components of the threshold shifting due to oxide charge trapping in the MOS and the reduction of current gain in the bipolar transistor. In this letter, the IGBT macro-model incorporating irradiation is implemented, and the electrical characteristics are analyzed by SPICE simulation and experiments. In addition, the collector current characteristics as a function of gate emitter voltage, VGE, are compared with the model considering the radiation damage of different doses under positive biases.

High gain pentacene inverter using different pentacene-thickness in several dielectrics

  • Mun, Sung-Jin;Lee, Ki-Moon;Lee, Kwang-H.;Oh, Min-Suk;Im, Seong-Il
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.826-829
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    • 2009
  • The authors report on the fabrication of p-type depletion mode inverter that composed of two pentacene based thin-film transistors (TFTs) on several dielectric surfaces. We use shift of threshold voltage depends on pentacene-thickness.

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자동이득 조절에서 해제시간에 따른 어음인지점수 변화 (The Word Recognition Score According to Release Time on Automatic Gain Control)

  • 황세미;전유용;박헌진;송영록;이상민
    • 대한의용생체공학회:의공학회지
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    • 제31권5호
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    • pp.385-394
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    • 2010
  • Automatic gain control(AGC) is used in hearing aids to compensate for the hearing level as to reduced dynamic range. AGC is consisted of the main 4 factors which are compression threshold, compression ratio, attack time, and release time. This study especially focus on each individual need for optimum release time parameters that can be changed within 7 certain range such as 12, 64, 128, 512, 2094, and 4096ms. To estimate the effect of various release time in AGC, twelve normal hearing and twelve hearing impaired listeners are participated. The stimuli are used by one syllable and sentence which have the same acoustic energy respectively. Then, each of score of the word recognition score is checked in quiet and noise conditions. As a result, it is verified that most people have the different best recognition score on specific release time. Also, if hearing aids is set by the optimum release time in each person, it is helpful in speech recognition and discrimination.

All-fiber Tm-Ho Codoped Laser Operating at 1700 nm

  • Park, Jaedeok;Ryu, Siheon;Yeom, Dong-Il
    • Current Optics and Photonics
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    • 제2권4호
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    • pp.356-360
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    • 2018
  • We demonstrate continuous-wave operation of an all-fiber thulium-holmium codoped laser operating at a wavelength of 1706.3 nm. To realize laser operation in the short-wavelength region of the emission-band edge of thulium in silica fiber, we employ fiber Bragg gratings having resonant reflection at a wavelength around 1700 nm as a wavelength-selective mirror in an all-fiber cavity scheme. We first examine the performance of the laser by adjusting the central wavelength of the in-band pump source. Although a pump source possessing a longer wavelength is observed to provide reduced laser threshold power and increased slope efficiency, because of the characteristics of spectral response in the gain fiber, we find that the optimal pump wavelength is 1565 nm to obtain maximum laser output power for a given system. We further explore the properties of the laser by varying the fiber gain length from 1 m to 1.4 m, for the purpose of power scaling. It is revealed that the laser shows optimal performance in terms of output power and slope efficiency at a gain length of 1.3 m, where we obtain a maximum output power of 249 mW for an applied pump power of 2.1 W. A maximum slope efficiency is also estimated to be 23% under these conditions.

Dynamic Threshold MOS 스위치를 사용한 고효율 DC-DC Converter 설계 (The design of the high efficiency DC-DC Converter with Dynamic Threshold MOS switch)

  • 하가산;구용서;손정만;권종기;정준모
    • 전기전자학회논문지
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    • 제12권3호
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    • pp.176-183
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    • 2008
  • 본 논문에서는 DTMOS(Dynamic Threshold voltage MOSFET) 스위칭 소자를 사용한 고 효율 전원 제어 장치 (PMIC)를 제안하였다. 높은 출력 전류에서 고 전력 효율을 얻기 위하여 PWM(Pulse Width Modulation) 제어 방식을 사용하여 PMIC를 구현하였으며, 낮은 온 저항을 갖는 DTMOS를 설계하여 도통 손실을 감소시켰다. 벅 컨버터(Buck converter) 제어 회로는 PWM 제어회로로 되어 있으며, 삼각파 발생기(Saw-tooth generator), 밴드갭기준 전압 회로(Band-gap reference circuit), 오차 증폭기(Error amplifier), 비교기(Comparator circuit)가 하나의 블록으로 구성되어 있다. 삼각파 발생기는 그라운드부터 전원 전압(Vdd:3.3V)까지 출력 진폭 범위를 갖는 1.2MHz 발진 주파수를 가지며, 비교기는 2단 연산 증폭기로 설계되었다. 그리고 오차 증폭기는 70dB의 DC gain과 $64^{\circ}$ 위상 여유를 갖도록 설계하였다. Voltage-mode PWM 제어 회로와 낮은 온 저항을 스위칭 소자로 사용하여 구현한 DC-DC converter는 100mA 출력 전류에서 95%의 효율을 구현하였으며, 1mA이하의 대기모드에서도 높은 효율을 구현하기 위하여 LDO를 설계하였다.

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광대역의 우수한 이득평탄도를 갖는 V-밴드 전력증폭기 MMIC (V-Band Power Amplifier MMIC with Excellent Gain-Flatness)

  • 장우진;지홍구;임종원;안호균;김해천;오승엽
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.623-624
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    • 2006
  • In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

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