• 제목/요약/키워드: GaMnAs

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강낭콩미숙종자로부터 Gibberellin $3Beta$-Hydroxylase 정제 및 성질 (Purification and Characterization of Gibberellin $3Beta$-Hydroxylase from Immature Seeds of Phaseolus vulgaris)

  • 곽상수
    • 한국식물학회:학술대회논문집
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    • 한국식물학회 1987년도 식물생명공학 심포지움 논문집 Proceedings of Symposia on Plant Biotechnology
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    • pp.133-148
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    • 1987
  • Gibberellin(GA) 3-$\beta$ hydroxylation is very important for the shoot elogation in the higher plants, since only 3$\beta$-hydryoxylated GAs promote shoot elogation in several plants. Fluctuation of 3$\beta$-hydryoxylase activity was examined during seed maturation using two cultivars of , P. vulgaris, Kentucky Wonder (normal) and Masterpiece (dwarf). Very immature seeds of both cultivars contain high level of 3$\beta$-hydroxylase activity (per mg protein). Both cultivars showed maximum of enzyme activity (per seed) in the middle of their maturation process. Gibberellin 3$\beta$-hydroxylase catalyzing the hydroxylation of GA20 to GA1 was purified 313-fold from very early immature seeds of P. vulgaris. Crude soluble enzyme extracts were purified by 15% methanol precipitation, hydrophobic interaction chromatogrphy, DEAE ion exchange column chromatography and gel filtration HPLC. The 3$\beta$-hydroxylase activity was unstable and lost much of its activity duting the purification. The molecular weight of purified enzyme was extimated to be 42, 000 by gel filtration HPLC and SDS-PAGE. The enzyme exhibited maximum activity at pH 7.7. The Km values for [2.3-3H] GA20 and [2.3-3H]GA9 were 0.29 $\mu$M and 0.33 $\mu$M, respectively. The enzyme requires 2-oxoglutarate as a cosubstrate; the Km value for 2-oxoglutarate was 250 $\mu$M using 3H GA20 as a substrate. Fe2+ and ascorbate significantly activated the enzyme at all purification steps, while catalase and BSA activated the purified enzyme only. The enzyme was inhibited by divalent cations Mn2+, Co2+, Ni2+, Cu2+, Zn2+, Cd2+ and Hg2+. Effects of several GAs and GA anaogues on the putrified 3$\beta$-hydroxylase were examined using [3H]GA9 and GA20 as a substrates. Among them, GA5, GA9, GA15, GA20 and GA44 inhibited the enzyme activity. [13C, 3H] GA20 was converted by the partially purified enzyme preparation to [13C, 3H]GA1, GA5 and GA6, which were identified by GC-MS, GA9 was converted only GA4, GA15 and GA44 were converted to GA37 and GA38, respectively. GA5 was epoxidized to GA6 by the preparation. This suggests that 3$\beta$-hydroxylation of GA20 and epoxidation of GA5 are catalyzed by the same enzyme in P, vulgaris.

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Field emission lamp for LCD backlight based on RGB phosphors and vertically-aligned CNTs

  • Park, Boo-Won;Choi, Nam-Sik;Kim, Sung-Hoon;Jeong, Yun-Tae;Kim, Jong-Su
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1545-1546
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    • 2007
  • Zinc gallate-based RGB phosphors and vertically aligned carbon nanotube emitters are prepared for flat field-emission lamp. The blend phosphors of blue $ZnGa_2O_4$, green $ZnGa_2O_4:Mn^{2+}$ and red $ZnGa_2O_4:Cr^{3+}$ are coated on the front glass, and the carbon nanotubes are chemically bonded on the rear ITO glass as a cathode.

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Ga-doped ZnO 투명전극을 적용한 교류무기전계발광소자 특성 연구 (Top-emission Electroluminescent Devices based on Ga-doped ZnO Electrodes)

  • 이운호;장원태;김종수;이상남
    • 반도체디스플레이기술학회지
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    • 제16권2호
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    • pp.44-48
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    • 2017
  • We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

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에티오피아 남부 켄티차 페그마타이트의 분화양상과 희유원소 광화작용 (Fractionation and Rare-Element Mineralization of Kenticha Pegmatite, Southern Ethiopia)

  • 김의준;김수영;문동혁;고상모
    • 자원환경지질
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    • 제46권5호
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    • pp.375-390
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    • 2013
  • 켄티차(Kenticha) 희유원소(Ta-Li-Nb-Be) 광화대는 에티오피아 남부의 오피올라이트 습곡-쓰러스트 복합체내에 위치하고 있으며, 1980년대 에티오피아-구소련간 수행된 공동탐사 프로그램을 통해서 처음 발견되었다. 켄티차 희유원소 광화대는 남쪽에서 북쪽으로 덜미다마(Dermidama), 킬킬리(Kilkele), 슈니힐(Shuni Hill), 켄티차, 부포(Bupo) 페그마타이트를 포함한다. 켄티차 페그마타이트는 남북방향의 사문암과 활석-녹니석 편암층을 평행하게 관입하고 있으며, 대략 연장 2 km, 폭 400-700 m로 노출되어 있다. 켄티차 페그마타이트는 내부적으로 대상(zoning)을 이루고 있으며, 광물조합에 따라 하부 석영-백운모-조장석 화강암, 중부 백운모-석영-조장석-미사장석 페그마타이트, 상부 스포듀민-석영-조장석 페그마타이트로 세분된다. 주성분, 미량성분(Rb, Li, Nb, Ta, Ga), 원소비(K/Rb, Nb/Ta, Mg/Li, Al/Ga)는 페그마타이트의 분별작용과 고화작용이 하부에서 상부 페그마타이트로 진행되었음을 시사한다. 반면에 일반적인 페그마타이트 멜트의 분화양상과 달리 켄티차 페그마타이트의 Mg/Li 비는 상부 페그마타이트로 가면서 증가하는 양상을 보인다. 이러한 양상은 후기 마그마성 열수변질 또는 상부 초염기성암과의 반응 결과로 해석된다. 켄티차 페그마타이트의 희유원소 광화작용은 상부 페그마타이트에 집중되며, 최대 $Li_2O$ 3.0%, Rb 3,780 pm, Cs 111 ppm, Ta 1,320 ppm, and Nb 332 ppm을 함유하고 있다. 켄티차 페그마타이트에서 광석광물은 주로 탄탈라이트, 스포듀민, 레피돌라이트가 산출되며, 탄탈라이트는 거정의 석영-스포듀민과 상대적으로 세립의 당상 조장석과 함께 산출된다. 탄탈라이트는 $Mn^*$$Ta^*$ 값에 근거할 때 Mn-탄탈라이트로 분류된다. 거정질과 세립의 탄탈라이트는 조성($Mn^*$, $Ta^*$, Nb/Ta) 차이가 명확히 나타나며, 거정질 탄탈라이트는 세립의 탄탈라이트에 비해 Ta이 강하게 부화되며 Nb은 결핍되어 있다. 결론적으로 켄티차 페그마타이트에서 희유원소 광화작용은 마그마 멜트의 분별작용 최후기에 형성되었다.

IF 고강도 합금화 용융아연도금강판의 표면품질에 미치는 합금원소의 영향 (Effect of Alloy Elements on Galvannealed Coating Quality in IF High Strength Steels)

  • 전선호;진광근;신광수;손호상;김대룡
    • 대한금속재료학회지
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    • 제46권5호
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    • pp.289-295
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    • 2008
  • The effect of the alloy elements(Si/Mn) ratio on the coating quality including wettabilty with molten zinc, galvannealing kinetics and crater has been investigated in interstitial-free high strength steel(IFHSS) containing Si and Mn. When the Si/Mn ratio was below 0.75, IF-HSS exhibited a good wettability leading to a good galvannealed coating quality after annealing at $800^{\circ}C$ for 40s in $15%H_2-N_2$ mixed gas with dew point $-60^{\circ}C$. In contrast, the wettability and galvannealed coating quality were deteriorated in the Si/ Mn ratio above 0.75. It is shown that they have relevance to oxides forms by selective oxidation on the steel surface. The oxide particles dispersed on the steel surface with a surface coverage of below 40% resulted in good wettability and galvannealed coating quality. The oxide particle is mainly consisted of $Mn_2SiO_4$ with low contact angle in molten zinc. On the other hand, the continuous oxide layer on the steel surface, such as network- and film-type,caused to poor wettability and galvannealed coating quality. The coverage of oxide layer was above 80%, and its chemical species was $SiO_2$ with high contact angle in molten zinc. Consequently, the Si/Mn alloy ratio played an importance role in galvannealed coating quality of IF-HSS.