• Journal of the Korea Institute of Military Science and Technology
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• v.24 no.3
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• pp.309-316
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• 2021

In this paper, the electrical power output of the micro-combustor thermophotovoltiac(TPV) system was analyzed. The system consists of a micro-combustor, photonic crystals(PhCs), and photovoltaic cells(PV cells). The system has a micro-combustor that can achieve over 1,000 K surface temperature by consuming 2.5 g/h hydrogen fuel. Also, this system incorporates current state-of-the-art PhCs surfaces(2D Ta PhCs and Tandem Filter) to increase electrical power output. In addition, InGaAsSb PV cell, which bandgap is 0.55 eV, was applied to convert a wide range of radiative energy. The performance analysis shows that a single micro-combustor TPV system can produce 0.4 W ~ 27.7 W electrical power with the temperature change of emitter(900 K ~ 1,500 K) and PV cell(250 K ~ 400 K).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.265-266
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• 2006

It was well known that thermopile was quiet a competent sensor using to probe the temperature of "hot point" where the temperature can be off the temperature-limitation for normal operation of the main electrical power equipment. In the present work, we aimed for developing new Ge-thermopile materials which can be using a non-contact temperature sensors at various hot-point of the power equipment and evaluation of its output property. As a results of the present works, a new thermopile which were composed Ga-poded p-type and Sb-doped n-type in Ge-semiconductor were designed and manufactured by MBE(Molecular Beam Epitaxy) process and showed superior sensitivity at room temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.2042-2049
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• 2019

Ten gizzard and three flesh samples of the broiler were collected from different locations in Tehsil Gujar Khan District Rawalpindi, Pakistan. The samples were dried, crushed and ground. Pellets were prepared by pressing the powder of the samples and that of the Bovine liver 1577c reference material obtained from NIST, USA. Proton induced X-ray emission (PIXE) installed at National Center for Physics, Islamabad, Pakistan has been used as a reliable and improved technique to determine concentration of various major/trace and toxic elements e.g. S, Cl, K, Ca, Cl, Fe, Cu, Mn, Co, Zn, Ti, Cd, Ga, Cr, V and Ni, in the Gizzard and Flesh samples of the broiler. The concentrations of all the detected elements in the samples are statistically significant. The certified and measured values of the elements in the reference material were in agreement with each other within a deviation of 7%. S, Cl, K and Ca are within tolerable limits and are good for human consumption. Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn were more than the acceptable limits of World Health Organization, WHO whereas Ga, As, Sn, Sb and Pb are not detected in most of the samples.

• Journal of Power Electronics
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• v.6 no.1
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• pp.18-28
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• 2006

The Electric Power Subsystem (EPS) is one of the most critical systems on any satellite because nearly every subsystem requires power. This makes the choice of power systems the most important task facing satellite designers. The main purpose of the Satellite EPS is to provide continuous, regulated and conditioned power to all the satellite subsystems. It has to withstand radiation, thermal cycling and vacuums in hostile space environments, as well as subsystem degradation over time. The EPS power characteristics are determined by both the parameters of the system itself and by the satellite orbit. After satellite separation from the launch vehicle (LV) to its orbit, in almost all situations, the satellite subsystems (attitude determination and control, communication and onboard computer and data handling (OBC&DH)), take their needed power from a storage battery (SB) and solar arrays (SA) besides the consumed power in the EPS management device. At this point (separation point, detumbling mode), the satellite's angular motion is high and the orientation of the solar arrays, with respect to the Sun, will change in a non-uniform way, so the amount of power generated by the solar arrays will be affected. The objective of this research is to select satellite EPS component types, to estimate solar array illumination parameters and to determine the efficiency of solar arrays during both detumbling and normal operation modes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.178-178
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• 2008

초소형 박막의 열전 발전모듈은 작은 부피와 한번 설치시 교체없이 지속적인 전원공급으로 소형의 센서 노드에 전원으로 각광 받고 있다. 이에 본 논문에서는 In Plane방식의 PIN Junction의 박막형 열전소자를 제작하여 보았다. 열전 박막인 P-type의 $BiSbTe_3$와 N-type의 $Bi_2Te_3$은 (001)GaAs 기판에 MOCVD(Metal Organic Chemical Vapour Deposition)방식으로 성장하였으며 전극으로는 E-Beam Evaporator를 이용하여 금(Au), 알루미늄(Al)을 사용하였다. 열전박막의 두께는 MOCVD의 성장시간과 온도 MO-x 가스의 압력으로 조절하여 주었다. 제작결과 1Pairs 당 약 $63{\mu}V$/K을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.142-142
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• 2007

Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.

• Journal of Conservation Science
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• v.36 no.3
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• pp.162-177
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• 2020

Research was conducted to characterize the copper production and smelting process with 11 copper smelting by-products (copper slag and copper crucible) excavated from the NA and LA areas at the Gwanbuk-ri archeological site in Buyeo. Scanning electron microscopy-energy dispersive spectroscopy, wavelength dispersive X-ray fluorescence, X-ray diffraction, and Raman microspectroscopy were employed in the analysis. The research results reveal that the copper slag from Gwanbuk-ri contained silicate oxide, magnetite, fayalite, and delafossite, which are typical characteristics of crucible slag and refined slag. The outward appearance and microstructure of the slag were grouped as follows: 1. glassy matrix + Cu prill, 2. glassy matrix + Cu prill + magnetite, 3. silicate mineral matrix + Cu prill, 4. crystalline (delafossite and magnetite) + amorphous (Cu prill), 5. magnetite + fayalite, and 6. slag from slag. The copper slags from Guanbuk-ri were found to contain residues of impurities such as SiO₂, Al₂O₃, CaO, SO₄, P₂O₅, Ag₂O, and Sb₂O₃ in their microstructure, and, in some cases, it was confirmed that copper, tin and lead are alloys. These results indicate that refining of intermediate copper(including impurities) and refining of alloys of copper(including impurities) - tin and refining of copper(including impurities) - tin - lead took place during the copper production process at Gwanbuk-ri, Buyeo.