• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.44 no.6
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• pp.259-268
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• 2018

Objectives: The purpose of this study was to evaluate the synergic effect of recombinant human bone morphogenetic protein-2 (rhBMP-2) and low-level laser therapy (LLLT) on bisphosphonate-treated osteoblasts. Materials and Methods: Human fetal osteoblast cells (hFOB 1.19) were cultured with $100{\mu}M$ alendronate. Low-level Ga-Al-As laser alone or with 100 ng/mL rhBMP-2 was then applied. Cell viability was measured with MTT assay. The expression levels of receptor activator of nuclear factor kappa-B ligand (RANKL), macrophage colony-stimulating factor (M-CSF), and osteoprotegerin (OPG) were analyzed for osteoblastic activity inducing osteoclastic activity. Collagen type and transforming growth factor beta-1 were also evaluated for bone matrix formation. Results: The results showed that rhBMP-2 and LLLT had a synergic effect on alendronate-treated osteoblasts for enhancing osteoblastic activity and bone matrix formation. Between rhBMP-2 and LLLT, rhBMP-2 exhibited a greater effect, but did not show a significant difference. Conclusion: rhBMP-2 and LLLT have synergic effects on bisphosphonate-treated osteoblasts through enhancement of osteoblastic activity and bone formation activity.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.135-142
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• 2001

Recently, plastic optical fiber draws a lot of attention as a new transmission medium for local area network (LAN) and home network applications. As PMMA based GI-POF (Graded Index Plastic Optical Fiber) has very low loss at about 500 nm and 650 nm wavelengths, it is very important to have a compact ultra short optical pulse source at these wavelength windows. In this paper, we have investigated detailed characteristics of gain switched laser system by using a commercially available low cost RF devices and an InGaAlP Fabry Perot semiconductor laser operating at 650 nm wavelength. The shortest optical 'pulse obtained was 33 psec with 1 GHz repetition rate. Depending on the DC bias current and the modulation frequency, the FWHM and the pulse energy of the gain switched pulses show 33.3-82.8 psec and 0.97-9.69 pI respectively. Also, the spectral bandwidths for CW and gain switched operations are 0.44 nm and 1.50 nm. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers in addition to estimate properties of ultra fast optical components and electro-optic devices. vices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.131-131
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• 2010

The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.42 no.1
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• pp.2-8
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• 2016

Objectives: The purpose of this study was to investigate the effects of low-level laser therapy (LLLT) with a diode gallium-aluminum-arsenide (Ga-Al-As) low-level laser device on the healing and attachment of titanium implants in bone. Materials and Methods: Thirteen New Zealand white male rabbits weighing $3.0{\pm}0.5kg$ were used for this study. Dental titanium implants (3.75 mm in diameter and 8.5 mm in length, US II RBM plus fixture; Osstem, Seoul, Korea) were implanted into both femurs of each rabbit. The rabbits were randomly divided into a LLLT group and a control group. The LLLT was initiated immediately after surgery and then repeated daily for 7 consecutive days in the LLLT group. Six weeks and 12 weeks after implantation, we evaluated and compared the osseointegration of the LLLT group and control group, using histomorphometric analysis, removal torque testing, and resonance frequency analysis (RFA). The results were statistically significant when the level of probability was 0.05 or less based on a non-parametric Mann-Whitney U-test. Results: The implant survival rate was about 96%. Histologically and histomorphometrically, we observed that the titanium implants were more strongly attached in LLLT group than in control group. However, there was no significant difference between the LLLT group and control group in removal torque or RFA. Conclusion: Histologically, LLLT might promote cell-level osseointegration of titanium implants, but there was no statistically significant effects.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.38
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• pp.48.1-48.8
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• 2016

Background: This study investigates the effect of alendronate-treated osteoblasts, as well as the effect of low-level laser therapy (LLLT) on the alendronate-treated osteoblasts. Bisphosphonate decreases the osteoblastic activity. Various treatment modalities are used to enhance the bisphosphonate-treated osteoblasts; however, there were no cell culture studies conducted using a low-level laser. Methods: Human fetal osteoblastic (hFOB 1.19) cells were treated with $50{\mu}M$ alendronate. Then, they were irradiated with a $1.2J/cm^2$ low-level Ga-Al-As laser (${\lambda}=808{\pm}3nm$, 80 mW, and 80 mA; spot size, $1 cm^2$; NDLux, Seoul, Korea). The cell survivability was measured with the MTT assay. The three cytokines of osteoblasts, receptor activator of nuclear factor ${\kappa}B$ ligand (RANKL), osteoprotegerin (OPG), and macrophage colony-stimulating factor (M-CSF) were analyzed. Results: In the cells treated with alendronate at concentrations of $50{\mu}M$ and higher, cell survivability significantly decreased after 48 h (p < 0.05). After the applications of low-level laser on alendronate-treated cells, cell survivability significantly increased at 72 h (p < 0.05). The expressions of OPG, RANKL, and M-CSF have decreased via the alendronate. The RANKL and M-CSF expressions have increased, but the OPG was not significantly affected by the LLLT. Conclusions: The LLLT does not affect the OPG expression in the hFOB cell line, but it may increase the RANKL and M-CSF expressions, thereby resulting in positive effects on osteoclastogenesis and bone remodeling.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• The Korean Journal of Pain
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• v.3 no.2
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• pp.139-143
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• 1990

There are several methods for the treatment of herpetic neuralgia, but there is no method that results in complete remission. The laser has lately come into use to reduce several acute or chronic pains. Twenty six patients who suffered from herpetic neuralgia were treated with Ne-Ne and Ga Al AS lasers simultaneously 2 or 3 times per week. In order to determine the degree of pain relief, we used the visual analogue scale. The results were as follows. 1) Low level laser therapy (LLLT) was a non-invasive, simple method. 2) The improvement rate after 15 irrradiations of laser was 63%. 3) The Highest improvement rate (24%) was shown after one irradiation of laser. 4) Only one patient above age 60 (3.8%) developed postherpetic neuralgia. 5) There was no significant difference effects of LLLT between above and below the age of 60. 6) There was no complication during or after irradiation of laser.

• Journal of Oral Medicine and Pain
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• v.33 no.1
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• pp.97-103
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• 2008

The purpose of this study was to examine the effect of LLLT on current perception threshold in trigeminal neuralgia patients. Affected site and non-affected site was irradiated by GaAlAs diode laser. Current perception threshold was evaluated with $Neurometer^{(R)}$ CPT/C before and after LLLT. As an outcomes,CPT were obtained. We made a comparision of these values and the results were as follows. 1. There were no significant difference in CPT between affected site and non-affected site before and after LLLT irradiation. 2. There were no significant difference in CPT between affected site and non-affected site after LLLT irradiation. 3. But, CPT values of $A{\beta}$ fiber incresed slightly on both site after LLLT irradiation

• Journal of Oral Medicine and Pain
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• v.25 no.3
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• pp.331-343
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• 2000

구강안면통증환자에서 저출력 레이저의 임상 효과는 많은 임상가에 의해 연구되었으나 그 결과에 대해서는 아직도 논란중이다. 이에 본 연구는 두 가지 방법으로 시행하여 구강안면부위의 발통점에 대한 저출력 레이저의 효과를 평가하였다. 첫 번째 방법은 저작근 중 교근, 측두근과 경부근육 중 승모근에 발통점을 가진 부산대학교 치과대학생 69명중 37명은 레이저 조사군, 32명은 레이저 모의 조사군으로 무작위로 분류하여 저출력 레이저의 치료효과를 평가하였다. 둘째 방법으로 동일 근육에 발통점이 있는 19명의 환자와 발통점이 전혀 없는 20명의 정상인을 무작위로 환자군과 정상 대조군으로 분류하고, 각 군을 다시 레이저 조사군과 모의 조사군으로 나누어 실제 저출력 레이저의 치료효과와 위약효과를 평가하였다. 50mW, 820nm의 GaAlAs 반도체 레이저를 이용하여 4주 동안 첫 주는 2회, 이후 3주 동안 각 1회씩 총 5회를 조사하였고, 레이저 모의 조사군에서도 동일한 방법으로 시행하였다. 치료반응은 전자통각계를 이용하여 압력통각역치를 치료 전, 치료 2주 및 4주에 측정하여 이를 비교한 바 다음과 같은 결과를 얻었다. 1. 레이저 조사군의 각 근육에서 측정한 압력통각역치는 치료 2주 후부터 유의하게 높아졌으며(P<0.05), 모의 조사군과의 차이는 이후 점점 더 증가하였다(P<0.001). 모의 조사군에서는 압력통각역치의 유의한 변화가 없었다. 2. 레이저 조사-환자군에서 측정한 압력통각역치는 레이저 모의조사-환자군의 압력통각역치보다 그 증가폭이 더 크게 나타났다(P<0.05). 정상 대조군은 레이저 조사와 관계없이 압력통각역치에 유의성이 없었다. 3. 약간의 위약 반응이 레이저 모의조사 환자군과 정상 대조군에서 관찰되나, 레이저 조사 환자군의 실제 레이저 치료효과가 위약 반응보다 우세하였다.