• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1274-1276
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• 1993

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.

• 대한물리치료과학회지
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• 제8권2호
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• pp.1005-1013
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• 2001

The present study was designed to investigate the effect of low power GaAlAs laser on spinal Fos expression related to the anti-nociceptive effect of laser stimulation. Low power GaAlAs laser was applied to either acupoint or non-acupoint for 2 hour under light inhalation anesthesia. Spinal Fos expression in the dorsal horn was compared to that obtained in inhalation anesthesia control group. Furthermore, we analyzed the effect of the local treatment of lidocaine on the spinal Fos expression evoked by low power GaAlAs laser stimulation. The results were summarized as follows: 1. In the normal animals, only a few Fos like immunoreactive(Fos-IR) neurons were evident in the lumbar spinal cord dorsal horn. Similarly, following prolonged inhalation anesthesia, Fos-IR neurons were absent in the dorsal horn of the lumbar spinal cord. In animals treated with laser stimulation, Fos immunoreactive neurons were increased mainly in the medial half of ipsilateral laminae I-III at lumbar segments L3-5. These findings directly indicated that prolonged anesthesia used in this study did not affect the Fos expression in the spinal cord dorsal horn of intact animals and low power laser stimulation dramatically produced Fos expression in the spinal cord laminae that are related to the anti-nociceptive effect of laser stimulation. 2. In acupoint stimulated animals, 10mW of laser stimulation, not 3mW and 6mW intensity, significantly increased the number of Fos immunoreactive neurons in the spinal dorsal horn(p<0.05). However, laser stimulation on acupoint more dramatically increased the number of Fos immunoreactive neurons in the spinal cord rather than laser stimulatin on non acupoint. These result suggested that laser stimulatin on acupoint was more effective treatment to activate the spinal neuron than non acupoint stimulation. 3. The local treatment of lidocaine totally suppressed the activity of spinal neurons that were induced by lower power 1aser stimulation. These data indicated that the anti-nociceptive effect of laser stimulation was absolutely dependent upon the peripheral nerve activity in the stimulated location. In conclusion, these data indicate that 10mW of low power laser stimulation into acupoint is capable of inducing the spinal Fos expression in the dorsal horn related to the anti-nociceptive effect of laser stimulation, Furthermore, the induction of spinal Fos expression was totally related to the peripheral nerve activity in the laser stimulated area.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• Current Optics and Photonics
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• 제3권6호
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• pp.583-589
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• 2019

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I_th) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I_op) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

• 한국진공학회지
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• 제17권6호
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• pp.523-527
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• 2008

GaAs/AlGaAs 물질계를 기반으로 한 양자폭포레이저를 제작하였다. 양자폭포레이저는 활성층의 위까지만 식각된 shallow mesa 구조와 활성층까지 식각된 deep mesa 구조로 제작되었다. shallow mesa 구조의 경우 문턱전류 밀도가 $26-32\;kA/cm^2$이었지만 deep mesa 구조의 경우 문턱전류 밀도는 $13\;kA/cm^2$로 대단히 감소되었다. Deep mesa 구조에서의 문턱전류 감소는 측면 방향으로의 전류 손실이 감소되었기 때문으로 설명되었다.

• 한국진공학회지
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• 제16권5호
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• pp.371-376
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• 2007

분자선 에피택시(molecular beam epitaxy, MBE)로 성장된 InGaAs 양자점 레이저 다이오드(quantum dot laser diode, QD-LD)와 InGaAs 양자우물 레이저 다이오드(quantum well laser diode, QW-LD)의 특성을 비교하였다. 펄스 입력전류 하에서 문턱전류밀도(threshold current density, $J_{th}$), 특성온도(characteristic temperature, $T_0$), 온도에 따른 발진파장의 변화도($d{\lambda}/dT$)를 측정한 결과, 양자우물 레이저 다이오드는 $J_{th}\;=\;322\;A/cm^2,\;T_0\;=\;55.2\;K,\;d{\lambda}/dT\;=\;0.41\;nm/^{\circ}C$로 측정되었으며, 양자점 레이저 다이오드는 $J_{th}\;=\;116\;A/cm^2,\;T_0\;=\;81.8\;K,\;d{\lambda}/dT\;=\;0.33\;nm/^{\circ}C$로 측정되었다. 양자점 레이저 다이오드는 양자우물 레이저 다이오드와 비교하였을 때, 문턱전류밀도 및 발진 광 파워가 상대적으로 우수한 결과를 보여주었다.

• The Journal of Korean Physical Therapy
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• 제9권1호
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• pp.89-96
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• 1997

The purpose of this study was to determine the effect of Ga-Al-As (Gallium-Aluminum-Arsenid) laser radiation on the tail-flick latency in rat. Thirty Sprague-Dawley male and female rats Were divided into five groups : that is control, laser 15sec radiation, laser 30sec radiation, laser 60sec radiation, and Tramadol Hcl injection groups. The continuous Ga-Al-As laser with, wave length 780-830nm and diameter of probe in the 3mm, averse output of 100mw radiation was applied to the meridian point(Gv 1 : Governing vessel) of the rats. Tail-flick latency were measured with hot plate at $55^{\circ}C$ : before treatment and immediately, 30 minutes, 1 hour, 2 hours, 24 hours, 24 hours and 48 hours after treatment. The result were as follows ; 1. The tail-flick latency according to time varition, control group was not significance. 2. The tail-flick latency according to time varition, laser 15 sec irradiate rats in post-treared was significance(P<0.05). 3. The tail-flick latency according to time varition, laser 30 sec irradiate rats group was not significance. 4. The tail-flick latency according to time varition, laser 60 sec irradiate rats in post 30 minute was significance(P<0.05). 5. The tail-flick latency according to time varition, Tramadol Hcl injection rats in post-treated (P<0.05), post 30 minute(P<0.05), post 60 minute (P<0.01) and 2 hour(P<0.05) was significance. This study suggest that Ga-Al-As (Gallium-Aluminum-Arsenid) laser applied to meridian point of the rat with 15 sec, 30 sec, and 60 set radiation could induc no analgesic effect, but Tramadol Hcl injection rat is good analgesic effect.

• 대한전자공학회논문지
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• 제27권11호
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• pp.1-8
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• 1990

4개의 Quantum well을 갖는 GRINSCH InGaAs/Inp Buried Heterostructure의 laser diode 12개로 구성되어 있는 12-laser diode array를 제작하여, 각 laser diode의 전자 흡수 영역의 인가 전압에 의하여 lasing 작용을 조절할 수 있는 가능성을 조사하였다. 12개의 V가 홈을 갖는 Si V-groove와 12개의 광섬유를 이용하여 12-laser diode array의 빛출력을 coupling하여 전자 흡수영역의 인가 전압의 변화에 따른 각 laser diode의 여러특성을 조사하였다. 마지막으로 12-laser diode array와 Si V-Groove와 광섬유를 이용하여 디지털 논리 gate들로 구성되어 있는 전자 회로 board들 간의 광대역 근거리 통신 및 B-ISDN을 위한 central office와 가입자 간의 통신을 구현하는 방법에 대하여 생각해 보았다.

• ETRI Journal
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• 제30권3호
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• pp.480-482
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• 2008

A novel InGaAsP/InP buried-ridge waveguide laser diode structure is proposed and demonstrated for use as a single-mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single-mode operation without kinks or beam-steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 ${\mu}m$ up to an injection current of 500 mA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.477-478
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• 2006

Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.