• 한국광학회지
• /
• 제6권4호
• /
• pp.302-309
• /
• 1995

상온에서 $1.55{\mu}m$ 를 발진하는 격자 정합된 InGaAs/InGaAsP 양자우물 레이저를 설계하여 주입 운반자 밀도와 온도의 함수로 이득 곡선을 계산하였다. 밴드 구조와 운동량 행력 요소의 계산에는 블록대각화된 8*8 이차 k.p 해밀토니안에 근거한 변환행렬법을 사용하였다. 이 격자정합된 양자우물은 TE 모우드로 발진하였다. 온도가 증가함에 따라 발진파장이 길어졌고, 투명 운반자 밀도는 증가하였으며 미분이득은 감소하였다. 이득 곡선의 온도의존도는 밴드 구조의 온도의존성과 페르미 함수의 온도의존성에 기인하는데 이중 후자의 효과가 주도적인 것이었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.353-356
• /
• 1996

Ultra-high-speed analog and digital ICs (integrated circuits) fur 10Gbit/sec optical communication systems have been designed, fabricated and analyzed in this research. These circuits, which are laser diode (LD) driver, pre-amplifier, automatic gain controlled (AGC) amplifier, limiting amplifier and decision circuit, have been implemented with AIGaAs/GaAs heterojunction bipolar transistors (HBTs). The optimized AIGaAs/GaAs HBTs for the 10Gbps circuits in this work showed the cutoff and maximum oscillation frequencies of 65㎓ and 53㎓, respectively. It is demonstrated in this paper that the 10Gbps optical communication system can be realized with the ICs designed and fabricated using AlGaAs/GaAs HBTs.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
• /
• pp.111.2-111
• /
• 1998

• 한국광학회지
• /
• 제5권2호
• /
• pp.278-285
• /
• 1994

가시광 디이오드 레이저의 온도와 주입 전류에 따른 발진 스펙트럼의 특성을 분석하고 주입-잠금 실험을 수행하여 잠금 특성을 분석하였다. 다이오드 레이저의 온도와 주입전류에 따른 스펙트럼 분석 결과 모드 도약이 일어나는 것을 관찰할 수 있었으며 모드 도약이 일어나지 않는 영역에서의 온도와 주입 전류의 변화에 대한 주파수 변화율이 각각 약 $33 GHz/^{\circ}C$, 6.6 GHz/mA로 나타남을 알 수 있었다. 일반적인 근적외선 AlGaAs 다이오드 레이저에서 순간적인 모드 도약이 일어나는 것과는 달리 가시광 다이오드 레이저는 모드 도약의 영역이 넓고 다중 모드로 동작하여 불량한 스펙트럼을 나타냈다. 이러한 특성을 갖는 다이오드 레이저를 이용한 주입-잠금 실험 결과 주입 강도가 $0~25\muW$에 대하여 잠금 대역폭은 0~5 GHz로 나타남을 알 수 있었다. 또한 주입 강도를 약 $25\muW$로 고정시키고, 편광 방향을 회전시키며 주입-잠금 대역폭을 측정한 결과 편광 방향에 의존함을 알 수 있었다. 주입-잠금된 광파의 위상 변화를 측정하기 위하여 주 레이저와 종 레이저를 간섭시켜 종 레이저의 주입 전류의 변화에 대한 간섭 무늬의 이동으로 위상의 변화를 조사하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.1094-1097
• /
• 2003

In this paper, the cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum wire (QWR) laser at each subband were investigated. At short cavity lasers less than $300{\mu}m$, a discrete wavelength switching from the n=1 to the n=2 subband occurred due to the increased threshold gain, resulting from the increased cavity loss. Using the characteristic of the wavelength shift from n=1 to the n=2 subband with shortening the cavity length, ultrafast lasing behaviors under gain switching at the n=1 and the n=2 subband transition were demonstrated and compared.

• Journal of the Optical Society of Korea
• /
• 제14권4호
• /
• pp.415-419
• /
• 2010

A phosphor-conversion white light source is demonstrated using an InGaN-based blue laser diode (LD) and a yellow-emitting phosphor excited by the blue LD. The photometric and colorimetric properties of this blue-LD-based white light source are characterized. When injection current of the LD is 100 mA, luminous flux and luminous efficiency of the white light are found to be over 5 lm and 10 lm/W, respectively. When injection current is >90 mA, luminance is estimated to be larger than 10 Mcd/$cm^2$. In addition, color characteristics of the white light such as chromaticity coordinates, a correlated color temperature, and a color rendering index are found to be quite stable as current and temperature of the LD varies. The demonstrated LD-based white light source is expected to be used in high-brightness illumination applications with good color stability.

• 한방안이비인후피부과학회지
• /
• 제30권4호
• /
• pp.62-74
• /
• 2017

Objectives : The purpose of this study is to investigate the effect of laser therapy for diabetic ulcer by using methods of systematic review. Methods : In this review, PubMed, Cochrane library, Web of Science, CNKI, CiNii, J-STAGE, NDSL and OASIS were used as the search engines. The search period is from the start date of the search engine to October 3, 2016. Randomized controlled trials(RCTs) using laser therapy for diabetic ulcer were searched and extracted by two independent researchers. Risk of bias(RoB) of Cochrane was used to assess methodological quality of studies. Results : Finally, five RCTs were selected. The follow-up period ranged from 15 days to 20 weeks. InGaAlP laser, GaAlAs laser and light emitting diode(LED) were used to treat diabetic ulcer. The clinical trials used sham laser irradiation or standard treatment as control in comparison to laser therapy. The endpoints included ulcer size, rate of healing and time to healing with follow-up period. The RCTs demonstrated therapeutic outcomes with no adverse effect. Most items of RoB were unclear and methodological quality was low. Conclusions : Our analysis suggests that laser therapy has therapeutic effects for diabetic ulcer. However, more systematic and stringent clinical trials will be required.

• Journal of the Optical Society of Korea
• /
• 제6권3호
• /
• pp.59-71
• /
• 2002

Photonic band gap structures have a high potential for nearly zero-threshold lasers. This paper describes new-types of low-threshold photonic crystal lasers fabricated in InGaAsP slab waveguides free-standing in air. Two-types of photonic crystal lasers are studied. One is a single-cell nano-cavity laser formed in a square array of air holes. This photonic band gap laser operates in the smallest possible whispering gallery mode with a theoretical Q >30000 and exhibits low threshold pump power of 0.8 mW at room temperature. The nther laser does not have any cavity structure and the lasing operation originates from the enhanced optical density of states near photonic band edges. A very low threshold of 35 $\mu$W (incident pump power) is achieved from this laser at 80 K, one of the lowest values ever reported. This low threshold is benefited from low optical losses as well as enhanced material gain at low temperature.

• Korean Journal of Acupuncture
• /
• 제28권3호
• /
• pp.1-12
• /
• 2011

Objectives : The purpose of this study is to review laser acupuncture studies to find possibility for applying high intensity laser to acupuncture and moxibustion treatment. Methods : Searching papers was performed using search engines of five electronic databases, including Pubmed, Thomson ISI, EMBASE, Sciencedirect, and EBSCO, from inception to May 2011 without language limitation. Inclusion criteria were clinical studies with human, randomized controlled trials (RCTs), case-control studies, and case reports. Selecting papers was performed with titles and abstracts in first step, scrutinize full text in second step, and then the extrated data was analyzed by two authors independently. The methodological quality for RCTs was evaluated using Jadad's scale. Results : Total 8 papers, (3 RCTs, 5 controlld studies, and 1 case reports), were finally selected. The study dealt with surgical laser, argon and $CO_2$ laser was one for each, with GaAs laser was two, and with new semiconductor laser, GaN, were four. The output range was from 110 mW to 15 W. The study diseases were alcohol addiction, knee osteoarthritis, bronchopneumonia and asthma for children, and circulation. All studies reported positive effect. The methodological quality in all RCTs was low because of below 3 points and all studies had few subject numbers. Conclusions : We suggest that high intensity laser can be applied to acupuncture and moxibustion. Further rigorous and well-designed study will be needed for various disease. The oriental medical society needs to take active measures to study and clinical application of acupuncture and moxibustion treatment with high intensity laser.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.297-297
• /
• 2010

Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO.