• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1274-1276
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• 1993

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.

• Journal of Korean Physical Therapy Science
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• v.8 no.2
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• pp.1005-1013
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• 2001

The present study was designed to investigate the effect of low power GaAlAs laser on spinal Fos expression related to the anti-nociceptive effect of laser stimulation. Low power GaAlAs laser was applied to either acupoint or non-acupoint for 2 hour under light inhalation anesthesia. Spinal Fos expression in the dorsal horn was compared to that obtained in inhalation anesthesia control group. Furthermore, we analyzed the effect of the local treatment of lidocaine on the spinal Fos expression evoked by low power GaAlAs laser stimulation. The results were summarized as follows: 1. In the normal animals, only a few Fos like immunoreactive(Fos-IR) neurons were evident in the lumbar spinal cord dorsal horn. Similarly, following prolonged inhalation anesthesia, Fos-IR neurons were absent in the dorsal horn of the lumbar spinal cord. In animals treated with laser stimulation, Fos immunoreactive neurons were increased mainly in the medial half of ipsilateral laminae I-III at lumbar segments L3-5. These findings directly indicated that prolonged anesthesia used in this study did not affect the Fos expression in the spinal cord dorsal horn of intact animals and low power laser stimulation dramatically produced Fos expression in the spinal cord laminae that are related to the anti-nociceptive effect of laser stimulation. 2. In acupoint stimulated animals, 10mW of laser stimulation, not 3mW and 6mW intensity, significantly increased the number of Fos immunoreactive neurons in the spinal dorsal horn(p<0.05). However, laser stimulation on acupoint more dramatically increased the number of Fos immunoreactive neurons in the spinal cord rather than laser stimulatin on non acupoint. These result suggested that laser stimulatin on acupoint was more effective treatment to activate the spinal neuron than non acupoint stimulation. 3. The local treatment of lidocaine totally suppressed the activity of spinal neurons that were induced by lower power 1aser stimulation. These data indicated that the anti-nociceptive effect of laser stimulation was absolutely dependent upon the peripheral nerve activity in the stimulated location. In conclusion, these data indicate that 10mW of low power laser stimulation into acupoint is capable of inducing the spinal Fos expression in the dorsal horn related to the anti-nociceptive effect of laser stimulation, Furthermore, the induction of spinal Fos expression was totally related to the peripheral nerve activity in the laser stimulated area.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• Current Optics and Photonics
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• v.3 no.6
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• pp.583-589
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• 2019

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I_th) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I_op) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.523-527
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• 2008

GaAs/AlGaAs based quantum cascade lasers were fabricated with two different types of i) the shallow mesa type which was etched up to above active region and ii) the deep mesa type which was etched through active region. While the threshold current density of shallow mesa type was $26-32\;kA/cm^2$, the one of deep mesa type was reduced drastically up to $13\;kA/cm^2$. Such lowered threshold current density at deep mesa type attributed to the reduction of current loss to the lateral directions.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.371-376
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• 2007

We have investigated the lasing characteristics of the InGaAs quantum dot laser diode (QD-LD) and InGaAs quantum well laser diode (QW-LD) operated at the 980 nm wavelength range. The 980-nm lasers are used as a pumping source for a erbium-doped fiber amplifier (EDFA) and it shows high efficiency in long-haul optical fiber network. We have compared the threshold current density, the characteristic temperature, the optical power and the internal efficiency of QD-LD and QW-LD under a pulsed current condition. The QD-LD shows superior performances to the QW-LD. Further optimization of a LD structure is expected to the superior performances of a QD-LD.

• The Journal of Korean Physical Therapy
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• v.9 no.1
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• pp.89-96
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• 1997

The purpose of this study was to determine the effect of Ga-Al-As (Gallium-Aluminum-Arsenid) laser radiation on the tail-flick latency in rat. Thirty Sprague-Dawley male and female rats Were divided into five groups : that is control, laser 15sec radiation, laser 30sec radiation, laser 60sec radiation, and Tramadol Hcl injection groups. The continuous Ga-Al-As laser with, wave length 780-830nm and diameter of probe in the 3mm, averse output of 100mw radiation was applied to the meridian point(Gv 1 : Governing vessel) of the rats. Tail-flick latency were measured with hot plate at $55^{\circ}C$ : before treatment and immediately, 30 minutes, 1 hour, 2 hours, 24 hours, 24 hours and 48 hours after treatment. The result were as follows ; 1. The tail-flick latency according to time varition, control group was not significance. 2. The tail-flick latency according to time varition, laser 15 sec irradiate rats in post-treared was significance(P<0.05). 3. The tail-flick latency according to time varition, laser 30 sec irradiate rats group was not significance. 4. The tail-flick latency according to time varition, laser 60 sec irradiate rats in post 30 minute was significance(P<0.05). 5. The tail-flick latency according to time varition, Tramadol Hcl injection rats in post-treated (P<0.05), post 30 minute(P<0.05), post 60 minute (P<0.01) and 2 hour(P<0.05) was significance. This study suggest that Ga-Al-As (Gallium-Aluminum-Arsenid) laser applied to meridian point of the rat with 15 sec, 30 sec, and 60 set radiation could induc no analgesic effect, but Tramadol Hcl injection rat is good analgesic effect.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.1-8
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• 1990

We made a 12-Laser Diode Array consisting of 12 Graded Index Separate Confinement (GRINSCH) InGaAs/Inp Buried Heterostructure 4 Quantum Well Laser Diodes and examined the potential of controlling lasing operation of each laser diode by the voltage to its electroabsorption region. Using Si V-Groove with 12 V-grooves, a 12-Laser Diode Array, and 12 optical fibers, we investigated the various characteristics of each laser diode by changing the voltage to its electro-absorption region. Finally, we thought over the promising way of implementing optical local area communication between electric circuit boards or between subscribers and a central office using a 12-Laser Diode Array, Si V-groove, and optical fibers.

• ETRI Journal
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• v.30 no.3
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• pp.480-482
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• 2008

A novel InGaAsP/InP buried-ridge waveguide laser diode structure is proposed and demonstrated for use as a single-mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single-mode operation without kinks or beam-steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 ${\mu}m$ up to an injection current of 500 mA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.477-478
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• 2006

Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.