• 전자공학회논문지B
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• 제30B권7호
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• pp.42-49
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• 1993

In this paper, switched-capacitor building block presented which are suitable for implementation in GaAs MESFET technology. They include a current source, a gain stage, and an operational amplifier. Switched-capacitor design techniques are discussed that minimize filter sentsitivity to finite gain of the GaAs operational amplifier. Simulation results are presented on third-order elliptic lowpass ladder filter at a sampling rate of 5GHz.

• 전자공학회논문지A
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• 제30A권9호
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• pp.24-29
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• 1993

The 607 nm GaInP/AlInP distributed bragg reflector (DBR) lasers using the second order gratings period of 184.7 nm were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional holographic method. GaInP/AlInP DBR lasers show single mode operations up to 1.8 times the threshold currents with a wavelength of 607 nm at 140 K and a wavelength shift of 0.033 nm/K is observed. No mode hopping was found in the temperature ranging from 120 to 165K.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.109-109
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• 2003

III- V ferromagnetic semiconductor has attracted great attention as a potential application for spintronics due to a successful demonstration of spin injection from ferromagnetic GaNnAs into semiconductor. GaMnN may be one of the possible candidates for room temperature operation. Samples were grown on sapphire (0001) substrate at $650^{\circ}C$ via molecular beam epitaxy with a single Precursor of (Et$_2$Ga(N$_3$)NH$_2$$CH_3$) and solid source of Mn at different Mn source temperature. The background pressure is low 10$^{-10}$ Torr and the samples growth pressure was 1.4 $\times$ 10$^{-6}$ Torr.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.510-514
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• 2005

We have investigated the excitation-light source dependence of photo-catalytic efficiency for the benzene removal. The photo-catalytic module for the benzene removal is fabricated by a combination of GaN-based ultraviolet light-emitting diode (UV GaN-LED) and $TiO_2$ thin film coated on an aluminum plate. The benzene reduction rates of 365 nm and 375 nm modules at 60 mA junction current are approximately $8.95\;\%/Hr$ and $9.2\;\%/Hr$, respectively, which indicates that 365 nm GaN-LED is more effective than 375 nm GaN-LED. The benzene reduction efficiency is also noticeably dependent on the excitation wavelength and excitation-light power, as well as it is increased with the shorter wavelength and higher excitation power. This result exhibits that UV GaN-LED is useful to remove the volatile organic compounds (VOCs) existing in the environment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1910-1912
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• 1999

This paper was described electrical characteristics of Metal/GaN contact for application of GaN thin films. The lowest contact resistivity was $1.7\times10^{-7}[\Omega-cm^2]$ at Ti/Al Structure. Mean while, GaN MESFETs have been fabricated with a 250 nm thick channel on a high resistivity GaN layer grown by GAIVBE system. For a gate-source diode reverse bias of 35 V, the gate leakage current was $120{\mu}A$. From the data, we estimate the transconductance for our GaN MESFET to be 25 mS/mm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.89-90
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• 2009

Three kind of surface-leakage-test-patterns were fabricated and measured in order to investigate the surface leakage current of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall. The pattern which contain the mesa wall has the largest surface leakage current among them. The leakage current due to the mesa wall is predominant source of the leakage current of AlGaN/GaN devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• 한국결정성장학회지
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• 제20권3호
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• pp.113-116
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• 2010

본 논문에서는 Sb를 촉매제로 이용하는 경우의 InGaN 나노구조의 성장과 구조적 특징 및 광학적 특성에 대해서 연구하였다. 결정성장에 있어서 촉매제의 사용은 성장 모드의 변화와 결정 결함의 감소 등을 위한 목적으로 많이 사용되어왔다. 본 연구에서는 혼합소스 HVPE(hydride vapor phase epitaxy) 사용하여 (0001) 사파이어 기판 위에 InGaN 나노구조를 성장하였고, 구조적 및 광학적 특성은 scanning electron microscope(SEM)과 photoluminescence(PL)를 통해 평가하였다. Sb이 첨가되지 않은 경우에는 InGaN 나노구조가 c-축 방향으로 정렬되는 경향을 보이지만 Sb이 첨가된 경우에는 InGaN 나노구조의 c-축 방향이 기판에 대해 평행하거나 경사진 방향으로 정렬되고 있는 것을 관찰할 수 있었다. In의 조성은 Sb 의 첨가 여부에 관계없이 약 3.2% 정도로 계산되었다. 이러한 결과들로부터 측면 배향된 나노입자를 활성층으로 하는 광소자에 적용할 경우 압전 전계를 완화할 수 있기 때문에 광소자의 발광 성능을 향상시킬 수 있을 것으로 기대된다.

• 산업기술연구
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• 제24권B호
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• pp.59-64
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• 2004

GaAs thin films were grown epitaxially by MOCVD method on (001) GaAs substrate. And as a surfactant, Bi(bismuth) thin films were deposited on GaAs buffer layer by using TMBi(trimethylbismuth) source. In-situ reflectance difference spectroscopy(RDS) was used to monitor the surface reconstruction of GaAs and Bi thin films. As the results, under the exposure of TBAs(tertiarybuthylarsine) and hydrogen atmosphere, the surface reconstruction of GaAs was changed from As-rich c($4{\times}4$) to As-rich ($2{\times}4$), which was due to the adsoption and desorption of As dimers. The first bismuth surface related RDS signal was reported. At the deposition temperature of $450^{\circ}C$, Bi-terminated GaAs surface showed the RDS spectrum similar to that of Sb-terminated GaAs surface, possibly a ($2{\times}4$) surface. And Bi surface layers were rapidly evaporated with increasing the deposition temperature($550^{\circ}C$), finally becoming As-terminated ($2{\times}4$) surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.77-78
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• 2006

We fabricated photonic crystals on GaAs and GaN substrates. After anodizing the aluminium thin film in electrochemical embient, the porous alumina was implemented to the mask for reactive ion beam etching process of GaAs wafer. And photonic crystals in GaN wafer were also fabricated using electron beam nano-lithography process. The coated PMMA thin film with 200 nm-thickness on GaN surface was patterned with triangular lattice and etched out the GaN surface by the inductively coupled plasma source. The fabricated GaAs and GaN photonic crystals provide the enhanced intensities of light emission for the wavelengths of 858 and 450 nm, respectively. We will present the detailed dimensions of photonic crystals from SEM and AFM measurements.