• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.301-301
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• 2010

2010년경 2.5G APD 시장은 3, 000억원 규모로 증가하는데 이는 FTTH 망의 확산에 힘입은 바 크다. 이와 같이 중요한 APD 소자는 현재 광통신 부품시장을 석권해 가고 있는 대만, 중국 업체들은 제조기술을 갖고 있지 않고 주로 미국-일본 기술에 의존하고 있기 때문에 Niche market으로 중요한 부품이라 할 수 있다. APD의 증폭은 높은 전기장에 의해 얻어지는데, 이 때문에 메사형 구조로는 신뢰성을 확보하기 어렵게 되고 따라서 평면형(Planar) 구조로 설계-제작하게 된다. APD 소자는 증폭층의 너비에 의해 APD의 이득-대역폭이 정해지므로 증폭층 폭을 정확하게 조절하는 것은 매우 중요하다. 증폭층의 폭은 에피 성장과 같은 높은 정밀성을 갖는 장비에 의해 조절하는 것이 아니라, Planar 구조의 특성상 Zn-확산에 의해 조절하게 된다. 대부분의 경우 Zn-확산은 Zn 또는 $Zn_3P_2$를 증착하여 drive-in 시키는 방법을 사용하는데, 이 경우 Zn가 interstitial site를 치고 들어감으로 인해 캐리어 농도가 $2{\times}10^{17}\;cm^{-3}$ 정도로 낮게 형성된다. 따라서 높은 인가 바이어스에서 p-side로 공핍층이 전개되기 때문에 증폭층의 폭을 조절하기가 매우 어렵다. 이 현상은 APD 제작에 있어서 수율과 관련이 깊다. 따라서 APD의 증폭층 폭을 tight하게 조절하기 위해서는 p-type 캐리어 농도를 높일 수 있는 gas-phase 확산 방식의 개발이 필요하다. 이 방식에는 Ampoule과 같은 closed tube 방식과 확산로와 같이 Gas를 지속적으로 흘려주면서 확산시키는 open-tube 방식이 있다. Ampoule 방식은 캐리어 농도 측면에서는 가장 좋은 방식이나, Ampoule의 size 및 온도 균일성 등으로 인해 생산성에 문제가 있다. 따라서 open-tube 방식의 확산기술개발은 매우 중요하다 할 수 있다. 본 연구에는 rapid thermal annealing (RTA) 방법에 의한 $Zn_3P_2$ 고체의 확산 방식과 DEZn MO source에 의한 Gas 확산 방식을 바탕으로 InP로의 확산된 Zn원자와 doping의 분포를 비교하였다. 실험결과, Gas 확산방식의 경우 Zn원자가 더욱 더 깊게 확산이 되었으며, 확산된 원자의 대부분이 도펀트로 작용함을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• 한국지하수토양환경학회지:지하수토양환경
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• 제23권3호
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• pp.27-42
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• 2018

It is important to identify the contaminant sources and to evaluate the fate and transport of heavy metals to crops in agricultural lands. This study was conducted to evaluate metal sources and its transfer and accumulation to crop in agricultural soils. Pollution indices were calculated and multivariate analysis was performed to identify metal sources. To evaluate transfer and accumulation of metals to crops, the contents of phytoavailable metals were evaluated by using single extraction method and the correlation between metal content and soil properties was analyzed. Also the BCF was quantitatively evaluated for investigating the metal transition to each crop grown in the research area. As a result, Cr, Ni, and Co were expected to be mainly derived from geologic factors due to weathering of certain parent rocks. The content of nickel in soils of the research area was slightly higher than that of the concern level criteria based on total concentration, but the amount transferred and accumulated in the crops was actually low. Understanding the contamination characteristics by investigating the pollution sources of heavy metals and its transfer and accumulation to crops through various evaluation techniques could provide important information for proper management of the agricultural land.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.83-83
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• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• 청정기술
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• 제16권4호
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• pp.245-253
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• 2010

대구경 강관 표면 보호를 위해 사용되는 필라멘트 와인딩 공정에 불포화 폴리에스터 (unsaturated polyester: UP)를 이용한 자외선 (ultraviolet) 경화 방법을 적용하고자, UP를 이용한 최적의 UV 경화 조건을 찾아보았다. 기존의 유기계 과산화물을 개시제로 사용한 열경화 방법에서는 개시제의 불안정성, 휘발성 유기물 발생, 열에 약한 대상물질의 변형 등 문제점이 발생하므로 이에 대한 개선책으로 UV 경화방법을 시도하였다. UV 경화에 사용되는 다양한 개시제 중에서 비교적 침투력이 높아서 두꺼운 고분자 층 형성이 가능한 개시제 2 종(Irgacure 819 및 Darocure 1173)을 선정하여 이들의 조합비율에 따라 경화된 UP 고분자에 대한 열역학적, 기계적 물성을 비교 분석하여 우수한 경화조건 (개시제 함량 1.5 phr, 혼합 비율 1:1.2, UV 램프로는 갈륨램프)을 찾아내었다. 또한 UP 광경화수지의 경도, 충격강도, 굴곡강도 향상을 위해 유리섬유를 수지 내에 적층하여 복합재료를 제조하고 이들의 특성을 비교한 결과 충격강도가 매우 향상되었다.

• Journal of Radiation Protection and Research
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• 제47권4호
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• pp.214-225
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• 2022

Background: The conventional cerium-doped Gd₂Al₂Ga₃O₁₂ (GAGG(Ce)) scintillator-based gamma-ray imager has a bulky detector, which can lead to incorrect positioning of the gammaray source if the shielding against background radiation is not appropriately designed. In addition, portability is important in complex environments such as inside nuclear power plants, yet existing gamma-ray imager based on a tungsten mask tends to be weighty and therefore difficult to handle. Motivated by the need to develop a system that is not sensitive to background radiation and is portable, we changed the material of the scintillator and the coded aperture. Materials and Methods: The existing GAGG(Ce) was replaced with Bi₄Ge₃O₁₂ (BGO), a scintillator with high gamma-ray detection efficiency but low energy resolution, and replaced the tungsten (W) used in the existing coded aperture with lead (Pb). Each BGO scintillator is pixelated with 144 elements (12 × 12), and each pixel has an area of 4 mm × 4 mm and the scintillator thickness ranges from 5 to 20 mm (5, 10, and 20 mm). A coded aperture consisting of Pb with a thickness of 20 mm was applied to the BGO scintillators of all thicknesses. Results and Discussion: Spectroscopic characterization, imaging performance, and image quality evaluation revealed the 10 mm-thick BGO scintillators enabled the portable gamma-ray imager to deliver optimal performance. Although its performance is slightly inferior to that of existing GAGG(Ce)-based gamma-ray imager, the results confirmed that the manufacturing cost and the system's overall weight can be reduced. Conclusion: Despite the spectral characteristics, imaging system performance, and image quality is slightly lower than that of GAGG(Ce), the results show that BGO scintillators are preferable for gamma-ray imaging systems in terms of cost and ease of deployment, and the proposed design is well worth applying to systems intended for use in areas that do not require high precision.

• IMMUNE NETWORK
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• 제23권3호
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• pp.25.1-25.15
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• 2023

Mucosal environments harbour lymphocytes, which express several adhesion molecules, including intestinal homing receptors and integrin αE/β7 (CD103). CD103 binds E-cadherin, an integrin receptor expressed in intestinal endothelial cells. Its expression not only enables homing or retention of T lymphocytes at these sites but is also associated with increased T lymphocyte activation. However, it is not yet clear how CD103 expression is related to the clinical staging of breast cancer, which is determined by factors such as the size of the tumor (T), the involvement of nearby lymph nodes (N), and presence of metastasis (M). We examined the prognostic significance of CD103 by FACS in 53 breast cancer patients and 46 healthy controls enrolled, and investigated its expression, which contributes to lymphocyte recruitment in tumor tissue. Patients with breast cancer showed increased frequencies of CD103⁺, CD4⁺CD103⁺, and CD8⁺CD103⁺ cells compared to controls. CD103 was expressed at a high level on the surfaces of tumor-infiltrating lymphocytes in patients with breast cancer. Its expression in peripheral blood was not correlated with clinical TNM stage. To determine the localisation of CD103⁺ cells in breast tissue, tissue sections of breast tumors were stained for CD103. In tissue sections of breast tumors stained for CD103, its expression in T lymphocytes was higher compared to normal breast tissue. In addition, CD103⁺ cells expressed higher levels of receptors for inflammatory chemokines, compared to CD103^- cells. CD103⁺ cells in peripheral blood and tumor tissue might be an important source of tumor-infiltrating lymphocyte trafficking, homing, and retention in cancer patients.

• 한국결정성장학회지
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• 제24권6호
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• pp.229-236
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• 2014

수평 전기로에서 $MnAl_2S_4$ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 $MnAl_2S_4$ 단결정 박막을 반절연성 GaAs(100)기판에 성장시켰다. $MnAl_2S_4$ 단결정 박막의 성장 조건은 증발원의 온도 $630^{\circ}C$, 기판의 온도 $410^{\circ}C$였고 성장 속도는 $0.5{\mu}m/hr$였다. 이때 $MnAl_2S_4$ 단결정 박막의 결정성의 조사에서 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 132 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. $MnAl_2S_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수를 293 K에서 10 K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=3.7920eV-(5.2729{\times}10^{-4}eV/K)T^2/(T+786K)$였다. $MnAl_2S_4$ 단결정 박막의 응용소자인 photocell로 사용할 수 있는 pc/dc 값이 가장 큰 광전도셀은 S 증기분위기에서 열처리한 셀로 $1.10{\times}10^7$이었으며, 광전도 셀의 감도(sensitivity)도 S 증기분위기에서 열처리한 셀이 0.93로 가장 좋았다. 또한 최대 허용소비전력(MAPD)값도 S 증기분위기에서 열처리한 셀이 316 mW로 가장 좋았으며, S 증기분위기에서 열처리한 셀의 응답시간은 오름시간 14.8 ms, 내림시간 12.1 ms로 가장 빠르게 나타나, $MnAl_2S_4$ 단결정 박막을 S 분위기에서 $290^{\circ}C$로 30분 열처리한 photocell이 상용화가 가능할 것으로 여겨진다.

• 한국결정성장학회지
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• 제9권2호
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• pp.197-206
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• 1999

수평 전기로에서 $AgInSe_2$다결정을 합성하여 HWE(Hot Wall Epitaxy) 방법으로 $AgInSe_2$ 단결정 박막을 반절연성 GaAs(100) 위에 성장하였다. $AgInSe_2$단결정 박막은 증발원과 기판의 온도를 각각 $610^{\circ}C$, $450^{\circ}C$로 성장하였다. 이때 성장된 단결정 박막의 두께는 3.8$\mu\textrm{m}$였다. 단결정 박막의 결정성의 조사에서 20 K에서 측정한 광발광 스펙트럼은 884.1nm(1.4024eV) 근처에서 excition emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 회절곡선(DCXD)의 반폭치(FWHM)도 125arcsec로 매우 작은 값으로 측정되어 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$였다. $AgInSe_2$단결정 박막의 광전류 단파장대 봉우리들로부터 20K에서 측정된 $\Delta$Cr(Crystal field splitting)은 0.12eV, $\Delta$So(spin orbit coupling)는 0.29 eV였다. 20K에서 얻어진 광발광 봉우리들 중에서 881.1nm(1.4071 eV)와 882.4nm(1.4051 eV)는 free exciton$E_x$의 upper polariton과 lower polariton인$E_x^U$와 $E_x^L$를 의미하며, 884.1nm(1.4024 eV)는 donor-bound exciton emission에 의한 $I_2$봉우리를, 885.9nm(1.3995 eV)는 acceptor-bound exciton emission에 의한 $I_1$ 봉우리를 각각 나타내었다. 또한 887.5nm(1.3970 eV)에서 관측된 봉우리는 DAP(donor-acceptor pair)에 기인하는 광발광 봉우리로 해석되었다.