• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.504-508
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• 2022

Single crystal gallium oxide (Ga₂O₃) has been an emerging material for power semiconductor applications. However, the defect distribution of Ga₂O₃ substrates needs to be carefully characterized to improve crystal quality during crystal growth. We analyzed the type and the distribution of defects on commercial (-201) Ga₂O₃ substrates to get a basic standard prior to growing Ga₂O₃ crystals. Etch pit technique was employed to expose the type of defects on the Ga₂O₃ substrates. Synchrotron white beam X-ray topography was also utilized to observe the defect distribution by a nondestructive manner. We expect that the observation of defect distribution with three-dimensional geometry will also be useful for other crystal planes of Ga₂O₃ single crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.41-46
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• 2020

The characteristics of the residual stress on the types of the substrate was investigated with adjusting the V/III ratio during GaN growth via the HVPE method. GaN single crystal layers were grown on a sapphire substrate and a GaN template under the conditions of V/III ratio 5, 10, and 15, respectively. During GaN growth, multiple hexagonal pits in GaN single crystal were differently revealed in accordance with growth condition and substrate type, and their distribution and depth were measured via optical microscopy(OM) and white light interferometry(WLI). As a result, it was confirmed that the distribution area and depth of hexagonal pit tended to increase as the V/III ratio increased. Moreover, it was found that the residual stress in GaN single crystal decreased as the distribution area and depth of the pit increased through measuring micro Raman spectrophotometer. In the case of GaN growth according to substrate type, the GaN on GaN template showed lower residual stress than the GaN grown on sapphire substrate.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.52 no.6
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• pp.316-324
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• 2003

This paper applied Elite-based Simplex-GA hybrid approach combined with Muptipop-GA (ESGA) to determining the location, size and number of capacitors to improve voltage profile and minimize power losses in unbalanced distribution systems. One of the main obstacles in applying GA to complex problems has been the high computational cost due to their slow convergence rate. To alleviate this difficulty, ESGA approach was developed that combines Elite-based Simplex-GA hybrid approach with Muptipop-GA. The objective function formulated consists of two terms: cost for energy losses and cost related to capacitor purchase and capacitor installation. The cost function associated with capacitor placement is considered as a step function due to banks of standard discrete capacities. Its efficiency was proved through the application in IEEE 13 bus and 34 bus test systems and was compared with several methods using GA.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.71-73
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• 1995

This paper presents an optimization technique using genetic algorithms(GA) for loss minimization in the distribution network reconfiguration. Determining switch position to be opened for loss minimization in the radial distribution system is a discrete optimization problem. GA is appropriate to solve the multivariable optimization problem and it uses population, not a solution. For this reason, GA is attractive to solve this problem. In this paper, we aimed at finding appropriate open sectionalizing switch position using GA, which can lead to minimum transmission losses.

• Proceedings of the KIEE Conference
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• 1995.07b
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• pp.488-490
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• 1995

This paper presents an optimization technique using genetic algorithms(GA) for loss minimization in the distribution network reconfiguration. Determining switch position to be opened for loss minimization in the radial distribution system is a discrete optimization problem. GA is appropriate to solve the multivariable optimization problem and it uses population, not a solution. For this reason, GA is attractive to solve this problem. In this paper, we aimed at finding appropriate open sectionalizing switch position using GA, which can lead to minimum transmission losses.

• Current Optics and Photonics
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• v.2 no.5
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• pp.468-473
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• 2018

We investigate the temperature dependence of efficiency droop in InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) in the temperature range from 20 to $80^{\circ}C$. When the external quantum efficiency (EQE) and the wall-plug efficiency (WPE) of the LED sample were measured as injection current and temperature varied, the droop of EQE and WPE was found to be reduced with increasing temperature. As the temperature increased from 20 to $80^{\circ}C$, the droop ratio of EQE was decreased from 16% to 14%. This reduction in efficiency droop with temperature can be interpreted by a temperature-dependent carrier distribution in the MQWs. When the carrier distribution and radiative recombination rate in MQWs were simulated and compared for different temperatures, the carrier distribution was found to become increasingly homogeneous as the temperature increased, which is believed to partly contribute to the reduction in efficiency droop with increasing temperature.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.1
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• pp.111-117
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• 2007

This paper presents a new approach to evaluate reliability indices of electric distribution systems using genetic Algorithm (GA). The use of reliability evaluation is an important aspect of distribution system planning and operation to adjust the reliability level of each area. In this paper, the reliability model is based on the optimal load transforming problem to minimize load generated load point outage in each sub-section. This approach is one of the most difficult procedures and become combination problems. A new approach using GA was developed for this problem. GA is a general purpose optimization technique based on principles inspired from the biological evolution using metaphors of mechanisms such as natural selection, genetic recombination and survival of the fittest. Test results for the model system with 24 nodes 29 branches are reported in the paper.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.4
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• pp.40-50
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• 1993

In this paper, MODFET devices with various gate length are simulated using the Monte-Carlo method. The number of superparticle is 5000 and the Poisson equation is solved to obtain field distribution. The structure of MODFET is n-AlGaAs/i-AlGaAs/iGaAs and doping concentration of n-AlGaAs layer is 1${\times}10^{17}/cm^{3}$ and the thickness is 500.angs., and the thickness of i-AlGaAs is 50$\AA$. The devices with gate length 0.2$\mu$m, 0.5$\mu$m, 1.0$\mu$m respctively are simulated and the current-voltage curves and transport characteristics of that devices are obtained. Occupancy of each subband and electron energy distribution and conduction energy band in channel have been analyzed to obtain transport characteristics, and particles transposed from source to drain have been analyzed to current-voltage curves. Current level is highest for the device of Lg=0.2$\mu$m and transconductance of this device is 310mS/mm.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.376-382
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• 1994

In this study we developed a program(DEVSIM) to simulate the two dimensional distribution of the electrostatic potential and the electric field of the arbitrary structure consisting of GaAs/AlGaAs semiconductor and metal as well as dielectric. By the comparision of the electric field distribution of GaAs MESFETs with the various recess gates we proposed a suitable device structure to improve the breakdown characteristics of MESFET. According to the results of simulation the breakdown characteristics were improved as the thickness of the active epitaxial layer was decreased. And the planar structure, which had the highly doped layer under the drain for the ohmic contact, was the worst because the highly doped layer prevented the space charge layer below the gate from extending to the drain, which produced the narrow spaced distribution of the electrostatic potential contours resulting in the high electric field near the drain end. Instead of the planar structure with the highly doped drain the recess gate structure having the highly doped epitaxial drain layer show the better breakdown characteristics by allowing the extention of the space charge layer to the drain. Especially, the structure in which the part of the drain epitaxial layer near the gate show the more improvement of the breakdown characteristics.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.