• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.62 no.3
• /
• pp.424-430
• /
• 2013

This paper presents a new design works for the braking chopper system which is included in the propulsion system of KTX high speed train. Due to the current fed type synchronous motors used in the propulsion system, some different behaviors are shown comparing to the voltage type other chopper systems. Specially this chopper system acts either braking controlling or regenerative power controlling system with a parallel resistive load in the propulsion system. In this paper, an improved simple high power IGBT brake chopper system has proposed which is able to be replaced with an existing complicated GTO chopper system. The analytical approaches to the parallel load type current chopper system and the propper snubber circuits calculation were explained in this paper to control new chopper system. In addition, the thermal resistance of the cooling system for power dissipation of IGBT modules was calculated also. Finally several PC simulations have been done to clarify its availability.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.1 no.2
• /
• pp.82-87
• /
• 1987

본 연구에서는 GTO Thyristor로 구성하고 개선한 대용량 전류형GTO Inveter를 설계하였다. 부하로서는 유도전류기를 사용하였으며, 그 동작 특성을 비교 검토한 결과 전류콘덴서를 사용하지 않으므로 전류시 Chopper 회로에 과도현상을 줄였으므로 회로에 안정성이 향상됨을 나타내었다.

• Proceedings of the KIEE Conference
• /
• 1984.07a
• /
• pp.270-271
• /
• 1984

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.43 no.2
• /
• pp.244-250
• /
• 1994

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

• Journal of the Korean Society for Railway
• /
• v.13 no.5
• /
• pp.504-508
• /
• 2010

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.