• Journal of radiological science and technology
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• v.21 no.2
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• pp.5-10
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• 1998

In the mammography, X-ray beam quality is one of the most important factors. Using X-ray mammography unit model GE/CGR Senography 600T Senix H.F, Authors studied four subjects. 1. The aluminum attenuation rate in 30 kVp when used with or without compression plate. 2. HVLs at 5 different area of the X-ray field of $26{\sim}32kVp$. 3. HVLs to know the influence of corrected measurement or parallel measurement. 4. Film density with microdensitometer along and cross to the long axis of X-ray tube, in terms of the Heel effect in the X-ray field. The following results were obtained. 1. Beam quality of anode area was harder than cathode area. 2. The dose reduction rate of compression plate was approximately $65.5%{\sim}88.1%$ and the beam quality with compression plate was hardened up to 4kVp accordingly. 3. If the X-ray beam enters the attenuation plate obliquely, HVL was $2.6{\sim}2.9%$ harder than perpendicular to it. 4. Because of heel effect, the film density of cathode area is higher than anode area to film density of 0.5.

• Archives of Pharmacal Research
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• v.14 no.1
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• pp.1-6
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• 1991

The crystal structure of licarin-B, a component of Myristicae Semen was determined by single crystal X-ray diffraction analysis. Crystal of the compound, which was recrystallized from the mixture of hexane and ether, is monoclinic with a=12.740(1), b=7.219(1), c=9.284(1) ${\AA}$, ${\beta}=94.75(1)^{\circ}$, $D_x=1.26$, $D_m=1.27\;g/cm^3$, space group P21, and Z=2. The structure was solved by direct method and refined by least-squares procedure to the final R value of 0.040 for 1532 independent reflections ${F{\ge}3{\sigma}(F)}$. The compound is a dimeric phenylpropanoid, and belongs to the neolignan analogues. The molecules are arranged along with the screw axis. The intermolecular contacts appear to be the normal van der Waals' forces.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3276-3278
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• 1999

LIGA 기술을 제품의 대량생산에 적용하기 위해서는 한번에 넓은 면적을 노광할 수 있는 X-ray 마스크가 요구된다. 기존에 널리 사용되고 있는 SiN 멤브레인 마스크는 내구성이 좋지 않고 면적을 크게하기 어렵다. 따라서 본 연구에서는 이러한 단점을 보완하기 위해 상용 graphite sheet를 이용하여 X-ray 마스크를 제작하였다. 제작된 graphite 마스크와 SiN 마스크를 이용하여 동일한 조건에서 X-ray 노광 실험을 하였고 마스크의 외형변화를 관찰하였다. 그 결과 SiN 마스크는 에너지 2.3GeV, 평균 전류 110mA에서 약 18시간 만에 파괴되었으나 graphite mask는 60시간 경과 후에도 육안상의 변화는 관찰되지 않았다. 또한 graphite 마스크를 이용하여 제작된 미세구조물의 치수측정결과 오차가 $1{\mu}m$ 미만인 정밀한 구조물 제작이 가능함을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.661-661
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• 2013

열전재료는 열-전기가 상호 가역적으로 변하는 재료로서, 에너지 변환소재 분야에서 널리 각광받고 있다. 열전재료의 성능은 무차원 열전성능지수(dimensionless figure of merit, $ZT={\alpha}^2{\sigma}T/{\kappa}$)로 평가된다. 여기서 ${\alpha}$는 제벡계수(Seebeck coefficient), ${\sigma}$는 전기전도도(electrical conductivity), ${\kappa}$는 열전도도(thermal conductivity), T는 Kelvin 온도를 나타낸다. 500 K에서 800 K까지의 중온 영역에서 우수한 열전특성을 보이는 $Mg_2X$ (X=Si, Ge, Sn)와 이들의 고용체는 성분원소가 독성이 없고, 매장량이 많아 친환경 열전재료로 각광받고 있다. $Mg_2X$ 고용체 중 $Mg_2Si-Mg_2Sn$ 고용체는 Si와 Sn의 큰 원자량 차이로 인해 낮은 열전도도와 높은 성능지수(ZT)를 얻을 것이라 예상되며 열전발전 소자로서의 응용이 기대된다. Sb가 도핑된 $Mg_{2+x}Si_{0.7}Sn_{0.3}Sb_y$ (x=0, 0.1, 0.2, y=0, 0.01) 고용체를 고상합성과 기계적 합금화로 합성한 후, 진공 열간압축 성형을 통해 성공적으로 제조하였다. X선 회절분석으로 상합성과 고용체 형성 여부를 확인하였고, Mg의 과잉첨가와 Sb 도핑에 따른 열전특성의 변화를 조사하였다.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.51 no.5
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• pp.212-219
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• 2002

In this paper, the epipolar geometry, genera17y used as a pin-hole camera model, is newly adapted to our proposed method that enables the affine reconstruction of the 3D object from two projected views. The proposed method models the projective projection of inherent X-ray imaging system, obviates the need to attach artifirially constructed material on the body, and requires none of the prior-knowledge regarding to intrinsic and extrinsic parameters of two X-ray imaging systems. The optimum numerical solution is obtained by applying the least mean square estimator to corresponding points on two projected X-ray planes. The performance of this proposed method is Quantitatively analyzed using computer synthesized model of Cochlear implantation electrodes. In simulated experiments, the propnsed method is insensitive to the added random noise, the scaling factor change, the center point change, and rotational angular change between two projection planes, as well as enables the stable 3D reconstruction in least square sense even in worst testing cases.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.182-189
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• 2011

In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel effects (SCEs) and excellent subthreshold swing (SS) characteristics. However, silicon TFETs have the drawback of low on-current and compound ones are difficult to integrate with silicon CMOS circuits. In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III-V TFETs, a Type-I heterojunction tunneling field-effect transistor (I-HTFET) adopting $Ge-Al_xGa_{1-x}As-Ge$ system has been optimized by simulation in terms of aluminum (Al) composition. To maximize device performance, we considered a nanowire structure, and it was shown that high performance (HP) logic technology can be achieved by the proposed device. The optimum Al composition turned out to be around 20% (x=0.2).

• Journal of Conservation Science
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• v.37 no.3
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• pp.220-231
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• 2021

The use of digital copies of film-based analog images and the introduction of digital radiographic imaging systems using image plates gradually replace the non-destructive radiationirradiation method of Cultural Heritage. The quality of images obtained from this technique is affected by conditions such as tube voltage, tube current, and exposure time, type of image acquisition medium, distance of the artifacts from the image acquisition medium, and thickness of artifacts. In this study, we evaluated the grayscale image obtained using GE's Computed Radiograhpy (CR) imaging system, the transmission characteristics of the X-ray source for each tree type (pine, chestnut, sawtooth oak, ginkgo) used in wooden Cultural Heritage, and the signal-to-noise ratio (SNR) and contrast. The GE's CR imaging were analyzed using the Duplex wire image quality indicator, line-pair gauges.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.110-110
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• 1998

GaN는 직접천이형 에너지 캡을 가지며 In과 화합물을 형성할 경우 1.geV-3.4eV까지 다양한 에너지 캡을 가지므로 청색 발광소자 고출력소자 고온 전자소자둥 웅용성이 많 은 물절로서 각광을 받고 있다. 그러나 G랴‘에 적합한 기판이 없다는 문제점으로 인하여 F FET, LD와 같은 다양한 구조의 웅용에 제 약이 따랐다. 이에 본 연구에서는 RF(radio frequency) Plasma-Assisted MBE( molecular beam e epitaxy )를 이용하여 InxGaj xN/G암J 양자우물 구조를 성장하였다. 이렇게 성장된 I InxGaj xN 박막과 InxGaj xN/GaN 양자우물구조의 특성의 분석은 광학적 특성올 PL( p photoluminescence ) , 결 정 성 의 분석 은 XRD ( x-ray diffraction ), 표면 과 단변 의 계 변 특성은 SEM(scanning electron microscopy)을 이용하여 분석하였다. 저온 PL의 측정결 과 기판온도를 680$^{\circ}$C로 고정한 후 In cell의 온도를 650$^{\circ}$C에서 775$^{\circ}$C까지 증가함에 따라 I InxGaj xN에 관계된 피크위치가 약3이neV정도 red shift 함을 관찰할 수 있었다. 한편 I InxGaj xN/GaN 양자우물구조의 경우 PL피크가 3.2없eV로써 InxGaj- xN의 PL 피크에 비 해 에서 약 25me V 고에너지 이동이 관측되었으며 이것은 우불 내에서 에너지레벨의 c confinement효과에 의해 에너지의 변화에 의한 것엄올 확인하였으며, 양자우물 구조에서 우물의 두께를 줄임에 따라 변화 폭은 1이neV정도 고에너지 이동을 관찰할 수 있었다. X XRD 측정의 결과 In의 mole fraction에 따라 격자상수의 변화를 관찰하였으며, 결정 성의 변화를 피크의 세기로 관찰하였다 .. XRD로 판단한 In의 mole fraction은 0.2임을 알 았다 .. SEM 측정은 표변과 단면의 측정으로서 표연특성과 단면의 특성을 InxGaj xN, I InxGaj xN/GaN 양자우물 구조 모두 알아보았다. 측정 결과 InxGaj-xN의 성 장조건으로 기판온도가 낮아지면서 표면의 거칠기 정도가 증가하였으며,680$^{\circ}$C의 기판온도에서 성장 한 양자우물 구조에 있어서 매끄라운 표면올 얻올 수 있었다.

• Journal of Magnetics
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• v.18 no.4
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• pp.386-390
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• 2013

This paper studies the effects of A-site substitution by barium on the magnetic and magnetocaloric properties of $Pr_{0.5}Sr_{0.5-x}Ba_{x}MnO_{3}$ (x = 0, 0.04, 0.08 and 0.1). The tetragonal crystal structures of the samples are confirmed by room temperature X-ray diffraction. The dependence of the Curie temperature ($T_C$) and the magnetic entropy change (${\Delta}S_M$) on the Ba doping content has been investigated. The samples of all doping contents undergo the second order phase transition. As the concentration of Ba increased, the maximum entropy change ($|{\Delta}S_M|_{max}$) increased gradually, from 1.15 J $kg^{-1}$ $K^{-1}$ (x = 0) to 1.36 J $kg^{-1}$ $K^{-1}$ (x = 0.1), in a magnetic field change of 1.5 T. The measured value of $T_C$ is 265 K, 275 K, 260 K and 250 K for x = 0, 0.04, 0.08 and 0.1, respectively. If combining these samples for magnetic refrigeration, the temperature range of ~220 K and 290 K, where |${\Delta}S_M$|max is stable at ~1.27 J $kg^{-1}$ $K^{-1}$ and RCP = 88.9 $J{\cdot}kg^{-1}$ for ${\Delta}H$ = 1.5 T. $Pr_{0.5}Sr_{0.5-x}Ba_{x}MnO_{3}$ compounds, are expected to be suitable for magnetic-refrigeration application due to these magnetic properties.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.399-421
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• 1996

(1) The solute distribution mechanism was analyzed for the Si0.95Ge0.05 single crystal fiber by u-PD method. (2) The steady-state solutions were obtained for the molten zone and the capillary zone. (3) The effect of the convection in the molten zone on partitioning was not significant for many cases. (4) Intermediate transient rise of Ge was shown by the sudden change of the growth velocity or molten zone height. (5) Periodic compositional modulation can be designed by using the intermediate transient.