• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국결정성장학회지
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• 제25권5호
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• 한국결정성장학회지
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• 제7권4호
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• pp.536-547
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• 1997

축방향으로 균일한 자장이 가하여진 Czochralski 도가니에서 도가니와 성장결정이 다양한 각속도로 회전하는 경우에 대하여 유동장, 온도장 및 산소의 농도장이 수치적으로 연구되었다. 도가니 벽의 가열에 의한 부력의 효과와 자유표면에서 온도차이에 의한 열모세관효과로 인한 용융물질의 유동은 도가니와. 성장결정의 회전에 따른 원심력에 의하여 차등적으로 억제될 수 있다. 이 원심력에 가장 큰 영향을 주는 인자는 도가니의 회전속도이며 이것이 초크랄스키 결정성장과정에서 속도장, 온도장, 농도장에 큰 영향을 주고 있다. 도가니의 회전속도가 작을 때에는 성장결정의 회전이 원심력을 효과적으로 발생시킨다.

• 조명전기설비학회논문지
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• 제22권4호
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• pp.61-67
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• 2008

본 논문은 발전소 보일러 및 제철소 고로의 미분탄 연소방식에 적용이 가능한 유량계 개발에 관한 연구로, 정전 용량을 이용한 미분탄 유량계를 개발하였다. 먼저 관에 흐르는 미분탄의 밀도 측정이 가능한 센서 및 회로를 설계하였고, 측정된 데이터를 분석하고 밀도를 계산하는 알고리즘을 구현하였다. 압송시스템에 설치된 로드셀의 출력 데이터와 측정된 데이터를 비교하여 개발된 유량계의 신뢰성을 확인하였다.

• 한국결정성장학회지
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• 제4권3호
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• pp.210-222
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• 1994

축방향의 균일한 자장이 Czochralski 도가니에 가하여졌을 때의 유동장, 온도장 및 산소의 농도장이 수치적으로 연구되었다.Czochralski 유동장과 농도장에 작용하는 부력, thermocapillarity, 원심력, 자성력, 산소의 확산계수, 산소의 segregation coefficient, SiO형태의 evaporation, 도가니벽의 ablation 등이 고려되었다. 회전방향으로의 대칭성으로부터 자오면에서의 속도성분과 회전방향의 속도성분, 온도, 전류의 흐름 등이 먼저 정상상태에 도달하였다고 가정하고 초기에 일정한 산소의 농도가 주어진 상황에서 비정상 상태의 산소의 농도장이 해석되었다. Czochralski 유동장에서의 대류와 확산에 의한 산소의 전달현상이 파악되었으며 결정성장 표면으로 흡수되는 산소의 농도가 연구되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.239-242
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• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.283-286
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• 1999

Transparent conductive aluminum-doped ZnO(AZO) films Were prepared by a ultrasonic spray pyrolysis method at the substrate temperature below 23$0^{\circ}C$. A vertical type hot wall furnace was used as a reactor in the deposition system. Zinc acetate dissolved in methanol was selected as a precursor. The substrate temperature was varied from 18$0^{\circ}C$to 24$0^{\circ}C$. Aluminum (Al) was doped into ZnO films by incorporating anhydrous aluminum chloride (AlCl$_3$) in the zinc acetate solution. The proportion of the Al in the starting solution was varied from 0 wt % to 3.0 wt %. The crystallographic properties and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The resistivity of the films was measured by the Van der Pauw method, and the mobility and carrier concentration were obtained through the Hall effect measurements Transmittance was measured in the visible region. The effects of substrate temperature and aluminum content in the starling solution on the structural and electrical properties of the AZO films are discussed

• 한국분말재료학회지
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• 제19권4호
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• pp.259-263
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• 2012

Dependence of the freeze-drying process condition on microstructure of porous W and pore formation mechanism were studied. Camphene slurries with $WO_3$ contents of 10 vol% were prepared by milling at $50^{\circ}C$ with a small amount of dispersant. Freezing of a slurry was done in Teflon cylinder attached to a copper bottom plate cooled at $-25^{\circ}C$. Pores were generated subsequently by sublimation of the camphene during drying in air for 48 h. The green body was hydrogen-reduced at $800^{\circ}C$ for 30 min, and sintered in the furnace at $900^{\circ}C$ for 1 h. After heat treatment in hydrogen atmosphere, $WO_3$ powders were completely converted to metallic W without any reaction phases. The sintered samples showed large pores with the size of about $70{\mu}m$ which were aligned parallel to the camphene growth direction. Also, the internal wall of large pores and near bottom part of specimen had relatively small pores with dendritic structure due to the growth of camphene dendrite depending on the degree of nucleation and powder rearrangement in the slurry.