• 전자공학회논문지 IE
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• 제48권4호
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• pp.25-29
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• 2011

유기 EL소자는 제작이 쉽고 휘도가 높아 CRT와 LED 대신 평판 디스플레이 패널의 광원으로써 많이 연구되어 지고 있으며, OLED 소자중 청색 OLED는 풀컬러 적용 어플리케이션에 적용할 수 있기 때문에 이에 대한 연구가 이루어 지고 있다. 본 연구에서는, 발광 소재로 PBD, Alq3를 사용하여 유기 EL 디바이스의 전기 발광 특성을 측정하였으며, 전류와 휘도는 전압과의 관계에서 알 수 있었고 휘도와 전류의 관계를 제시하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.337-342
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• 2004

Since 1992, Philips has been developing polymer OLEDs resulting in a first commercial monochrome display just 10 years later. Philips is now focusing on the technology development required to mass-produce full-color polymer OLDE displays, based on passive and active-matrix addressing. High precision inkjet printing has been chosen as the deposition technology for the OLED material. In this paper, we give an overview of the activities of Philips in the area of mobile OLED applications and explore the route towards large screen OLED television.

• 한국정보통신학회논문지
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• 제15권7호
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• pp.1415-1422
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• 2011

본 논문에서는 풀 칼라 전광판에서 고효율의 해상도 표출을 위해서 듀얼 스캐닝 제어방식을 제안하고, 이를 이용해서 LED전광판의 고정된 픽셀을 영상신호에 따라 픽셀 도트 형태를 변화하게 하였다. 그리고 DICT(Dynamic Image Correction Technology) 메인 컨트롤러를 이용해서 동영상 정보를 히스토그램 균등화에 의거 영상 계조도의 값을 균일하게 분포하도록 하고, 동적 영역을 변환하여 화질을 개선하며, 입력 영상을 듀얼 오토 스캔 스위칭 컨트롤러로 전광판 내 LED Module의 픽셀을 물리적으로 제어함으로서 기존 전광판 LED 픽셀 도트의 표출 대비 4배의 고해상도 표출이 가능하도록 하는 기술을 제안하고 이를 시험제작을 통해서 그 성능을 입증하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.421-424
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• 2007

We have succeeded in designing a PHUND (portable head up navigation display), which has a compact system with a MD panel and full color display device using RGB LED sources. The PHUND has been developed as an alternative to conventional built-in type HUD system targeting the high volume aftermarket with an affordable price.

• 방송공학회논문지
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• 제20권6호
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• pp.928-937
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• 2015

기존의 헤드업 디스플레이는 작은 허상 크기로 인하여 운전자가 영상 정보를 쉽게 인식할 수 없는 어려움을 가지고 있기 때문에, 본 연구에서는 수평 방향으로 영상을 넓히는 다중 화면 구조와 컴바이너 렌즈를 사용하여 영상 확대와 다채널 윈도우 구조의 헤드업 디스플레이를 연구하였다. 0.47inch 크기의 LCD를 사용하여 투과와 반사 기능의 허상 영상을 사람의 눈에서 3m 위치에 구현하는 기술을 연구하여 근거리와 원거리의 물체에 대한 운전자의 인지 시간을 짧게 하였다. 허상 영상의 콘텐츠로는 스마트 폰을 이용하여 다양한 내비게이션 정보 등을 디스플레이 할 수 있도록 하여 안전과 정보를 동시에 제공할 수 있도록 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.108-108
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• 2012

High-performance GaN-based light emitting diodes (LEDs) with high efficiency and excellent reliability have been of technological importance forapplications in full color display, automotive lighting, and solid state lighting. To realize high-performance and excellent-reliability LEDs, various technologies such as surface texturing, transparent conducting oxide, surface Plasmon, highly p-conduction layer, current blocking layer, photon-enhanced layer, and nanostructures have been extensively investigated. Among them, advanced core technologies based on how to suppress surface leakage and current crowding, how to enhance current injection efficiency and output power, and how to resist electrostatic damage will be displayed and discussed using our reported and preliminary results. New approaches like integrated LEDs will be also introduced and discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.189-189
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• 2016

Recently, many researchers have shown an increased interest in colloidal quantum dots (QDs) due to their unique physical and optical properties of size control for energy band gap, narrow emission with small full width at half maxima (FWHM), broad spectral photo response from ultraviolet to infrared, and flexible solution processing. QDs can be widely used in the field of optoelectronic and biological applications and, in particular, colloidal QDs based light emitting diodes (QDLEDs) have attracted considerable attention as an emerging technology for next generation displays and solid state lighting. A few methods have been proposed to fabricate white color QDLEDs. However, the fabrication of white color QDLEDs using single QD is very challenging. Recently, hybrid nanocomposites consisting of CdTe/ZnO heterostructures were reported by Zhimin Yuan et al.[1] Here, we demonstrate a novel but facile technique for the synthesis of CdTe/ZnO/G.O(graphene oxide) quasi-core-shell-shell quantum dots that are applied in the white color LED devices. Our best device achieves a maximum luminance of 484.2 cd/m2 and CIE coordinates (0.35, 0.28).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.