• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.5
• /
• pp.537-542
• /
• 2014

The three-dimensional (3-D) NAND flash structure with fully charge storage using edge fringing field effect is presented, and its programming characteristic is evaluated. We successfully confirmed that this structure using fringing field effect provides good program characteristics showing sufficient threshold voltage ($V_T$) margin by technology computer-aided design (TCAD) simulation. From the simulation results, we expect that program speed characteristics of proposed structure have competitive compared to other 3D NAND flash structure. Moreover, it is estimated that this structural feature using edge fringing field effect gives better design scalability compared to the conventional 3D NAND flash structures by scaling of the hole size for the vertical channel. As a result, the proposed structure is one of the candidates of Terabit 3D vertical NAND flash cell with lower bit cost and design scalability.

• Current Optics and Photonics
• /
• v.3 no.6
• /
• pp.510-515
• /
• 2019

In this paper, we introduce a 1.3-㎛ 25-GHz waveguide-integrated vertical PIN type Ge-on-Si photodetector fabricated using a multi-project wafers service based on fringing field analysis in the depletion region. In general, 1.3-㎛ photodetectors fabricated using a commercial foundry service can achieve limited bandwidths because a significant amount of photo-generated carriers are located within a few microns from the input along the device length, and they are influenced by the fringing field, leading to a longer transit time. To estimate the response time, we calculate the fringing field in that region and the transit time using the drift velocity caused by the field. Finally, we compare the estimated value with the measured one. The photodetector fabricated has a bandwidth of 20.75 GHz at -1 V with an estimation error of <3 GHz and dark current and responsivity of 110 nA and 0.704 A/W, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.4
• /
• pp.606-611
• /
• 2012

The similarity, analogy and equivalence between the phenomenon due to electric and magnetic dipoles have been discussed in the open literature for different situations. Here we are presenting the numerical proof of the trajectory of leakage electric field due to a semi-infinite electric dipole layer in the external periphery and the electric field in the space between oppositely charged surfaces. The result is also valid for the fringing electric field of a parallel plate capacitor. The result is also proved to be a dual of Amp$\grave{e}$re's law in the electrostatics due to a semi-infinite electric dipole layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.214-214
• /
• 2010

단위면적 당 메모리 집적도를 높이기 위해 플래시 기억소자의 크기를 줄일 때, 셀 사이의 거리의 감소에 의한 간섭효과가 매우 커져 소자 크기의 축소가 한계에 도달하고 있다. 이러한 문제점을 개선하기 위해 본 연구에서는 fringing field 효과를 이용한 SONOS 구조 게이트 위에 금속 공간층을 가지는 플래시 메모리 소자를 연구하였다. 소자에 소스와 드레인에 도핑을 하는 공정단계를 거치지 않아도 되는 fringing field 효과를 이용한 SONOS 구조를 가진 기억소자에서 트랩층 양 쪽에 절연막을 증착하고 게이트 외측으로부터 트랩층 양 쪽 절연막까지 금속을 증착시켜 금속 공간층을 형성하였다. 게이트에 전압을 인가할 때 트랩층 절연막 외측의 금속 공간층 영역에도 동시에 전압이 인가되므로 게이트가 스위칭 역할을 충분히 하게 하기 위해서 트랩층 양 쪽 절연막 두께를 블로킹 산화막 두께와 같게 하였다. 소자의 누설전류를 감소하기 위하여 채널 아래 부분에 boron으로 halo 도핑을 하였다. 제안한 기억소자가 fringing field 효과에 의해 동작하는 것을 확인하기 위하여 Sentaurus를 사용하여 제시한 SONOS 구조를 가진 기억소자의 전기적 특성을 조사하였다. 시뮬레이션을 통해 얻은 금속 공간층이 있을 때와 없을 때에 대한 각 상태에서 같은 조건으로 트랩층에 전하를 트랩 시켰을 때 포획된 전하량이 변하였다. 각 상태에서 제어게이트에 읽기 전압을 인가하여 전류-전압 특성 곡선을 얻었으며, 각 상태에서의 문턱전압의 변화를 통해 금속 공간층이 있을 때 간섭효과가 감소하였다.

• Journal of the Korean Vacuum Society
• /
• v.5 no.4
• /
• pp.278-283
• /
• 1996

We constructed a single path cylindrical mirror analyser(CMA) using field terminator methods. With computer simulation, the best fit voltage ratio and position of the field terminaor was determined with maintain log-scale equipotential line near both end of the CMA. Then we construct field terminator with voltage divider of metal-oxide resisters which reduces the fringe field effect. The resolving power of the CMA was better than $\Delta$E/E=0.4%.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.16 no.5
• /
• pp.96-100
• /
• 2007

Condenser lens and objective lens are used to demagnify the image of the crossover to the final spot size. In lens, electrons are focused by magnetic fields. This fields is fringing field. It is important in electron focusing. Electron focusing occurs the radial component field and axial component field. Radial component produces rotational force and axial component produces radial force. Radial force causes the electron's trajectory to curve toward the optic axis and corss it. Focal length decreases as the current of lens increases. In this paper, we use the focal length for desiging the hardware of lens current control and present the results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.4
• /
• pp.351-355
• /
• 2003

In this paper, rectangular patch antenna is miniaturized by changing the middle of patch into narrow microstrip line except the edges of the patch where the fringing field occurs. Miniaturized rate, gain, bandwidth, radiation pattern of suggested antennas were compared with general square and rectangular microstrip antennas by using simulator Ensemble. As a result, it reduces the dimension of antenna by 44 % and improves the characteristic of x-pol by 40 dB as an advantage when compare with square microstrip antenna while it reduces bandwidth.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.16 no.10
• /
• pp.925-933
• /
• 1991

Caracteristics of cylindrical rectanyular patch microshtrip resonator are analyzed by cavity model. To minimize the error of resonant frequency due to fringing field, the resonant frequency is calcylated by the concept of effective dielectric constant. The transmisson type resonator operating at 3GHz is designed and manufactured. The measured data of the resonant frequency and reflection loss are 3.019Ghz and \ulcorner32.78dB respectively. These results nearly coincide with theoretical results.

• Journal of Electrical Engineering and Technology
• /
• v.9 no.4
• /
• pp.1343-1348
• /
• 2014

The low frequency noise in Silicon Nanowire Field Effect Transistors is analyzed by characterizing the gate electrode dependence on various geometrical parameters. It shows that gate electrodes have a strong impact in the flicker noise of Silicon Nanowire Field effect transistors. Optimization of gate electrode was done by comparing different performance metrics such a DIBL, SS, $I_{on}/I_{off}$ and fringing capacitance using TCAD simulations. Molybdenum based gate electrode showed significant improvement in terms of high drive current, Low DIBL and high $I_{on}/I_{off}$. The noise power sepctral density is reduced by characterizing the device at higher frequencies. Silicon Nanowire with Si3N4 spacer decreases the drain current spectral density which interms reduces the fringing fields there by decreasing the flicker noise.

• Journal of the Korean Magnetics Society
• /
• v.7 no.6
• /
• pp.321-326
• /
• 1997

We analyzed an important part of control valve, magnet unit, which is used to control the fluid. Magnetic circuit which is composed of magnet and yoke is analyzed using finite element method. Then, flux density and coil force were calculated and compared with those of measured. According to the simulation results, the gap field, force constant, and permeance coefficient were 3~5 kG, 27.5 N/A, 22.1, respectively, which corresponded reasonably well with the measured values. We also obtained reluctance factor of 1.1 and fringing factor of 1.4 by simulation.